Method and system for manufacturing a semiconductor device

1 . A method for manufacturing a semiconductor structure, the method comprising:

receiving layout data representing information for manufacturing the semiconductor structure, wherein the semiconductor structure has a first region and a second region adjacent to the first region, a first parasitic capacitance is formed in the first region and a second parasitic capacitance is formed in the second region;

determining a ratio of the first parasitic capacitance of the first region to the second parasitic capacitance of the second region;

determining whether a voltage difference between the first region and the second region is within a predetermined voltage range;

determining whether an overlapping area of the first region over a substrate is within a predetermined area range; and

revising the layout data and outputting a revised layout data to a mask generator, wherein the revised layout data includes information for forming a dummy conductor in the second region to minimize the determined parasitic capacitance difference.

2 . The method of claim 1 , wherein the information comprises a set of photolithography masks for manufacturing the semiconductor structure.

3 . The method of claim 1 , further comprising:

adding dummy capacitance to minimize the voltage difference if the voltage difference is not within a predetermined voltage range.

4 . The method of claim 1 , wherein the semiconductor structure further comprises a first conductor disposed in the first region.

5 . The method of claim 4 , wherein the first conductor is a first gate electrode, and the forming the dummy conductor comprises:

forming a second gate electrode and the first gate electrode in a same operation.

6 . The method of claim 4 , wherein the first conductor is a first source/drain region, and the forming the dummy conductor comprises:

forming a second source/drain region and the first source/drain region in a same operation.

7 . A method for manufacturing a semiconductor structure, the method comprising:

receiving layout data representing information for manufacturing the semiconductor structure having a first conductor in a first region, a second conductor in a second region, and a dielectric between the first conductor and the second conductor;

determining whether a ratio of a capacitance of the first conductor to a capacitance of the second conductor is within a predetermined range;

determining whether a voltage difference between a voltage of the first conductor and a voltage of the second conductor is within a predetermined voltage range;

determining whether an overlapping area of the first conductor over a substrate is within a predetermined area range; and

revising the layout data and outputting a revised layout data to a mask generator, wherein the revised layout data includes information for forming a dummy conductor in the first region or the second region to minimize the determined voltage difference.

8 . The method of claim 7 , wherein the first conductor and the second conductor include a metallization layer, a metal trace, or a doped polysilicon.

9 . The method of claim 7 , wherein the dielectric is in contact with the first conductor and the second conductor.

10 . The method of claim 7 , wherein the first conductor is separated from the second conductor by the dielectric.

11 . The method of claim 7 , further comprising forming a first gate electrode in the first region, and the method further comprises:

outputting the revised layout data further including information for forming a second gate electrode as the dummy conductor in the second region.

12 . The method of claim 7 , further comprising forming a first active region in the first region, and the method further comprises:

outputting the revised layout data further including information for forming a second active region as the dummy conductor in the second region.

13 . The method of claim 7 , wherein the method further comprises:

revising information of the overlapping area if the overlapping area is not within the predetermined area range.

14 . A system for manufacturing a semiconductor device, the system comprising:

a storage device comprising layout data representing information for manufacturing the semiconductor device having a first conductor, a second conductor, and a dielectric between the first conductor and the second conductor; and

a processor coupled to the storage device and programmed for:

determining whether a ratio of a capacitance of the first conductor to a capacitance of the second conductor is within a predetermined range;

determining whether a voltage difference between a voltage of the first conductor and a voltage of the second conductor is within a predetermined voltage range;

checking whether an area of the first conductor overlapping the substrate is within a predetermined area range;

revising the layout data, including information for forming a dummy conductor in the first region or the second region to minimize the determined voltage difference; and

outputting a revised version of the layout data to a mask generator.

15 . The system of claim 14 , wherein the processor is further programmed for:

revising the layout data by revising information of a dielectric constant of the dielectric.

16 . The system of claim 14 , wherein the processor is further programmed for:

forming the dummy conductor having a same capacitance as a capacitance difference between capacitances of the first conductor and the second conductor.

17 . The system of claim 14 , wherein the processor is programmed for:

adding dummy capacitance to minimize the voltage difference if the voltage difference is not within the predetermined voltage range.

18 . The system of claim 14 , wherein the processor is further programmed for:

defining a minimum lateral spacing between the first conductor and the second conductor.

19 . The system of claim 14 , wherein the first conductor is over a first active region, and wherein the processor is further programmed for:

revising the layout data by adding information for forming a second active region and the first active region in a same operation.

20 . The system of claim 14 , further comprising a first via under the first conductor, and wherein the processor is further programmed for:

revising the layout data by adding information for forming a second via and the first via in a same operation.