Appratus and method for changing a read voltage applied for reading data from a non-volatile memory cell
A read retry table (RRT) apparatus is coupled to a plurality of memory dies via a data path. The apparatus is configured to collect data from a plurality of memory cells coupled to a plurality of word lines in the plurality of memory dies via the data path; perform a first clustering on the plurality of word lines based on an error correction capability of error correction circuitry for collected data; perform a second clustering on an outlier of the first clustering; and generate or update an RRT based on values obtained from the first clustering and the second clustering.
1 . A read retry table (RRT) apparatus coupled to a plurality of memory dies via a data path, wherein the RRT apparatus is configured to:
collect data from a plurality of memory cells coupled to a plurality of word lines in the plurality of memory dies via the data path;
perform a first clustering on the plurality of word lines based on an error correction capability of error correction circuitry for collected data;
perform a second clustering on an outlier of the first clustering; and
generate or update a read retry table based on values obtained from the first clustering and the second clustering,
wherein the first clustering comprises:
searching K cluster centroids based on a number of clusters corresponding to a size of the RRT, where K is a positive integer;
adding at least one of the plurality of word lines to at least one of K clusters established based on the K cluster centroids; and
recalculating and updating the K cluster centroids based on the added word line.
2 . The RRT apparatus of claim 1 , wherein the plurality of memory dies is arranged in a same row or a same column of a same wafer.
3 . The RRT apparatus of claim 2 , wherein the plurality of word lines corresponds to at least one same row address sampled from a memory block or a word line group included in each of the plurality of memory dies.
4 . The RRT apparatus of claim 3 , wherein the RRT apparatus is coupled to the plurality of memory dies via a same channel of the data path.
5 . The RRT apparatus of claim 1 , wherein the RRT apparatus selects the K cluster centroids by:
selecting, as a first centroid among the K cluster centroids, a random word line among the plurality of word lines;
searching, as a second centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the first centroid among the plurality of word lines;
searching, as a third centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the first and second centroids among the plurality of word lines; and
sequentially searching, as a K-th centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the previously selected centroids among the plurality of word lines.
6 . The RRT apparatus of claim 5 ,
wherein the RRT apparatus is configured to:
establish a Voronoi distance range from the K cluster centroids for each of the K clusters, the Voronoi distance range corresponding to the error correction capability of the error correction circuitry; and
classifying a word line which does not belong to the K clusters as the outlier of the first clustering.
7 . The RRT apparatus of claim 1 , wherein the RRT apparatus is configured to calculate a fail bit count (FBC) for each of the plurality of word lines based on preset levels of a read voltage, the preset levels corresponding to selected values among multi-bit data stored in the plurality of memory cells.
8 . The RRT apparatus of claim 7 ,
wherein the RRT apparatus is configured to:
establish a Voronoi distance range from the K cluster centroids for each of the K clusters, the Voronoi distance range determined based on the fail bit count and the error correction capability of the error correction circuitry; and
classify a word line which does not belong to the K clusters as the outlier of the first clustering.
9 . The RRT apparatus of claim 1 , wherein the second clustering comprises:
adding the outlier of the first clustering to an additional cluster having a Voronoi distance range calculated based on the error correction capability of the error correction circuitry and a fail bit count which is obtained by applying values stored or predetermined in the read retry table before the RRT apparatus generates or updates the read retry table; and
calculating the values for the read retry table to add all of the outlier of the first clustering to the additional cluster.
10 . A method for operating a data processing apparatus, the method comprising:
collecting data from a plurality of memory cells coupled to a plurality of word lines in a plurality of memory dies via a data path;
performing a first clustering on the plurality of word lines based on an error correction capability of error correction circuitry for collected data;
performing a second clustering on an outlier of the first clustering; and
generating or updating a read retry table (RRT) based on values obtained from the first clustering and the second clustering,
wherein the method further comprises transferring the collected data to a server, which is configured to perform the first clustering and the second clustering, via a network.
11 . The method of claim 10 , wherein the generating or updating the RRT comprises:
receiving the values obtained from the first clustering and the second clustering via the network;
generating or updating the RRT based on the values; and
storing the generated or updated RRT in a non-volatile memory storage.
12 . The method of claim 10 , wherein the plurality of word lines corresponds to at least one same row address sampled from a memory block or a word line group included in each of the plurality of memory dies.
13 . A method for operating a data processing apparatus, the method comprising:
collecting data from a plurality of memory cells coupled to a plurality of word lines in a plurality of memory dies via a data path;
performing a first clustering on the plurality of word lines based on an error correction capability of error correction circuitry for collected data;
performing a second clustering on an outlier of the first clustering; and
generating or updating a read retry table (RRT) based on values obtained from the first clustering and the second clustering,
wherein the first clustering comprises:
searching K cluster centroids based on a number of clusters corresponding to a size of the RRT, where K is a positive integer;
adding at least one of the plurality of word lines to at least one of K clusters established based on the K cluster centroids; and
recalculating and updating the K cluster centroids based on the added word line.
14 . The method of claim 13 , wherein the selecting comprises:
selecting, as a first centroid among the K cluster centroids, a random word line among the plurality of word lines;
searching, as a second centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the first centroid among the plurality of word lines;
searching, as a third centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the first and second centroids among the plurality of word lines; and
sequentially searching, as a K-th centroid among the K cluster centroid, a word line having a greatest Voronoi distance from the previously selected centroids among the plurality of word lines.
15 . The method of claim 13 ,
wherein the first clustering comprises:
establishing a Voronoi distance range from the K cluster centroids for each of the K clusters, the Voronoi distance range corresponding to the error correction capability of the error correction circuitry; and
classifying a word line which does not belong to the K clusters as the outlier of the first clustering.
16 . The method of claim 13 , wherein the first clustering comprises calculating a fail bit count (FBC) for each of the plurality of word lines based on preset levels of a read voltage, the preset levels corresponding to selected values among multi-bit data stored in the plurality of memory cells.
17 . The method of claim 13 ,
wherein the first clustering comprises:
establishing a Voronoi distance range from the K cluster centroids for each of the K clusters, the Voronoi distance range determined based on the fail bit count and the error correction capability of the error correction circuitry; and
classifying a word line which does not belong to the K clusters as the outlier of the first clustering.
18 . The method of claim 15 , wherein the second clustering comprises:
adding the outlier of the first clustering to an additional cluster having a Voronoi distance range calculated based on the error correction capability of the error correction circuitry and a fail bit count which is obtained by applying values stored or predetermined in the RRT before the generating or updating the RRT; and
calculating the values for the RRT to add all of the outlier of the first clustering to the additional cluster.