Monolithic modular high-frequency plasma source
Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.
1 . A monolithic source array, comprising:
a dielectric plate having a first surface and a second surface opposite from the first surface;
a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure, wherein a cross-section of each protrusion along a plane parallel to the first surface is circular and has a same area, and wherein each protrusion has a hole extending partially through a center of the protrusion; and
a conductive layer conformal with the plurality of protrusions, wherein the conductive layer has a plurality of openings therein, and wherein each of the plurality of openings in the conductive layer exposes a corresponding one of the holes in the plurality of protrusions.
2 . The monolithic source array of claim 1 , wherein each protrusion comprises a sidewall surface and a third surface, wherein the third surface is parallel to the first surface.
3 . The monolithic source array of claim 2 , wherein a depth of the hole is less than a thickness of the protrusions between the third surface and the first surface.
4 . The monolithic source array of claim 1 , wherein each protrusion of the plurality of protrusions is centrally symmetric about an axis perpendicular to the first surface.
5 . The monolithic source array of claim 1 , wherein the dielectric plate has a thickness between the first surface and the second surface that is approximately 30 mm or less.
6 . The monolithic source array of claim 5 , wherein the thickness between the first surface and the second surface is approximately 10 mm or less.
7 . The monolithic source array of claim 1 , wherein the dielectric plate comprises an inert dielectric layer over the second surface.
8 . The monolithic source array of claim 7 , wherein the inert dielectric layer comprises one or more of AlN, SiN, SiO 2 , Al 2 O 3 , a transition metal nitride, a transition metal oxide, a composition comprising Al, O, and N, a composition comprising Al, Hf, O, and F, a composition comprising Y, O, F, and N, and a composition comprising Hf, Zr, O, F, and N.
9 . The monolithic source array of claim 1 , wherein the dielectric plate and the protrusions comprise Al 2 O 3 .