Target processing device and target processing method
A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.
1 . A target processing device comprising:
a processing chamber;
a first supply source configured to supply at least one of a first ion including carbon or a first gas including carbon;
a second supply source configured to generate a second plasma from a second gas;
a transport unit configured to convey a target into the processing chamber; and
a control device configured to alternately perform a number of times a first operation of forming a film including carbon on the target disposed in the processing chamber using at least one of the first ion and a first plasma generated from the first gas and a second operation of removing the film by a chemical reaction between the second plasma and the film, while controlling the first and second supply sources and without removing the target from the processing chamber,
wherein the first supply source includes an arc ion source that generates the first ion by arc discharge and introduces the first ion into the processing chamber.
2 . The target processing device according to claim 1 , further comprising:
a first power source configured to supply a first voltage to the processing chamber;
a second power source configured to supply a second voltage to the processing chamber; and
a gas supply source configured to selectively introduce the first gas including carbon and the second gas into the processing chamber,
wherein the first operation includes introducing the first gas from the gas supply source to the processing chamber, generating the first ion from the first gas by supplying the first voltage from the first power source to the processing chamber, and subsequently stopping the supply of the first voltage and the introduction of the first gas, and
wherein the second operation includes introducing the second gas from the gas supply source to the processing chamber, generating the second plasma from the second gas by supplying the second voltage from the second power source to the processing chamber, and subsequently stopping the supply of the second voltage and the introduction of the second gas.
3 . The target processing device according to claim 1 , wherein the second supply source includes a remote plasma source that generates the second plasma from the second gas and introduces the second plasma into the processing chamber.
4 . The target processing device according to claim 1 , wherein the first operation is performed by locating a ferromagnetic body below the target, the ferromagnetic body having unipolarity in a direction substantially parallel to a bottom surface of the target.
5 . The target processing device according to claim 1 , wherein the transport unit is a robot and the processing chamber includes a conveyance port through which the target is conveyed into and removed from the processing chamber.
6 . The target processing device according to claim 5 , wherein the conveyance port is open when the target is conveyed into and removed from the processing chamber and closed during the first and second operations.
7 . The target processing device according to claim 1 , wherein the target is a photomask or a template.
8 . A target processing device comprising:
a processing chamber;
a first supply source configured to supply at least one of a first ion including carbon or a first gas including carbon;
a second supply source configured to generate a second plasma from a second gas;
a transport unit configured to convey a target into the processing chamber; and
a control device configured to alternately perform a number of times a first operation of forming a film including carbon on the target disposed in the processing chamber using at least one of the first ion and a first plasma generated from the first gas and a second operation of removing the film by a chemical reaction between the second plasma and the film, while controlling the first and second supply sources and without removing the target from the processing chamber,
wherein the first operation is performed by locating a ferromagnetic body below the target, the ferromagnetic body having unipolarity in a direction substantially parallel to a bottom surface of the target.