IP Library › Granted Patent US 12676439
Granted Patent B2
US 12676439 · App. 18/345,122 · Granted Jul 7, 2026

Cantilever contact support using memory metal structure

Inventors: Anjali Kalpesh Kumar (Rochester, MN); Theron Lee Lewis (Rochester, MN); Abdikarim Hussein (Rochester, MN); Timothy Jennings (Rochester, MN)
Assignee: International Business Machines Corporation
H01R13/15H01R43/26H01R12/716H01R12/722H01R13/112
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12676439
App. No.
18/345,122
Granted
Jul 7, 2026
Kind
B2
Abstract

An electrical connector structure is provided including a cantilever contact with a memory metal support that provides for improved cantilever contact mating. In one embodiment, the electrical contact structure includes cantilever beam having a contact portion for engaging a pin structure and a non-contact portion that is mechanical support with the contact portion. An insulated memory metal support beam is positioned adjacent to the non-contact portion of cantilever beam, wherein the insulated memory metal support beam transitions from a first geometry to a second geometry with the application of a transition element. The first geometry of the insulated memory metal support beam provides that the insulating memory metal support beam does not engage the non-contact portion of the cantilever beams. The second geometry of the insulated memory support beam contacts the non-contact portion of the cantilever beam producing a force that supports the contact portion of the cantilever contacts.

Claims (29)

1 . An electrical connector, comprising:

a housing;

a cantilever beam having a contact portion for engaging a pin structure and a non-contact portion that is mechanical support with the contact portion; and

an insulated memory metal support beam positioned adjacent to the non-contact portion of the cantilever beam, the insulated memory metal support beam transitions from a first geometry to a second geometry with an application of a transition element, wherein the first geometry of the insulated memory metal support beam provides that the insulating memory metal support beam does not engage the non-contact portion of the cantilever beam, and the second geometry of the insulated memory metal support beam contacts the non-contact portion of the cantilever beam producing a force that supports the contact portion of cantilever contacts, wherein the cantilever beam and the insulated memory metal support beam extend in a same direction and from a same side of the housing.

2 . The electrical connector of claim 1 , wherein a metal composition of the insulated memory metal support beam is selected from the group consisting of nickel titanium alloys, copper-aluminum-nickel alloys, and combinations thereof.

3 . The electrical connector of claim 1 , wherein a metal composition of the insulated memory metal support beam is an alloy of elements selected from the group consisting of zinc, copper, gold, iron, and combinations thereof.

4 . The electrical connector of claim 1 , wherein a metal composition of the insulated memory metal support beam is an alloy characterized by a one way memory effect.

5 . The electrical connector of claim 1 , wherein a metal composition of the insulated memory metal support beam is an alloy characterized by a two way memory effect.

6 . The electrical connector of claim 1 , wherein an insulator for the insulated memory metal support beam is an insulating jacket having a composition selected from the group consisting of polyvinyl chloride (PVC), cross-linked polyethylene (XLPE), fluoroplastics, rubber, ethylene-propylene rubber, silicone rubber insulation, and combinations thereof.

7 . The electrical connector of claim 1 , wherein the first geometry has a first curvature, and the second geometry has a second curvature, wherein the second curvature is greater than the first curvature.

8 . The electrical connector of claim 7 , wherein the first curvature is substantially zero curvature.

9 . An electrical contact structure comprising:

a housing;

deformable contacts having a contact portion for engaging a pin structure and a non-contact portion that is mechanical support for the contact portion; and

a memory metal support beam is positioned adjacent to the non-contact portion of the deformable contacts, wherein the memory metal support beam transitions from a first geometry having a first curvature to a second geometry having a second curvature with an application of a transition element, in which the first curvature of the memory metal support beam does not engage the non-contact portion of the deformable contacts, and the second curvature of the memory metal support beam contacts the non-contact portion of the deformable contacts, wherein the deformable contacts and the memory metal support beam extend in a same direction and from a same side of the housing.

10 . The electrical contact structure of claim 9 , wherein a metal composition of the memory metal support beam is selected from the group consisting of nickel titanium alloys, copper-aluminum-nickel alloys, and combinations thereof.

11 . The electrical contact structure of claim 9 , wherein a metal composition of the memory metal support beam is an alloy of elements selected from the group consisting of zinc, copper, gold, iron, and combinations thereof.

12 . The electrical contact structure of claim 9 , wherein a metal composition of the memory metal support beam is an alloy characterized by a one way memory effect.

13 . The electrical contact structure of claim 9 , wherein a metal composition of the memory metal support beam is an alloy characterized by a two way memory effect.

14 . The electrical contact structure of claim 9 , wherein the first curvature is substantially zero curvature.

15 . A method for reinforcing contacts in electrical connectors, the method comprising:

positioning an insulated memory metal support beam adjacent to a non-contact portion of a cantilever beam in a housing, wherein the cantilever beam includes a contact portion for engaging a pin structure that is mechanically supported by the non-contact portion, wherein the cantilever beam and the insulated memory metal support beam extend in a same direction and from a same side of the housing;

engaging the pin structure to the contact portion of the cantilever beam, wherein the engaging of the pin structure to the contact portion includes inducing a normal force from the cantilever beam on the pin structure; and

applying a transition element to the insulated memory metal support beam, wherein the transition element induces a geometry change in the insulated memory metal support beam that causes the insulated memory metal support beam to apply a force to the cantilever beam that reinforces the normal force on the pin structure.

16 . The method of claim 15 , wherein the transition element is provided by heating the insulated memory metal support beam.

17 . The method of claim 15 , wherein the transition element is provided by applying a magnetic field to the insulated memory metal support beam.

18 . The method of claim 15 , wherein the geometry change is a change in curvature of the insulated memory metal support beam so that the insulated memory metal support beam directly contacts the cantilever beam.

19 . The method of claim 15 , wherein the transition element results in a one way memory effect.

20 . The method of claim 15 , wherein the transition element is two transition temperatures that results in a two way memory effect.