Optoelectronic component
An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.
1 . An optoelectronic component suitable for being integrated into an optoelectronic circuit, the component comprising:
a III-V semiconductor membrane comprising:
a p-doped layer, called p layer,
an intrinsic layer deposited on the p layer; and
an n-doped layer, called n layer, deposited on the intrinsic layer;
an asymmetric photonic crystal waveguide, called PC waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side, the two longitudinal sides being opposite to each other;
electrical contacts arranged on one side and on the other side respectively of the PC waveguide in the plane of the membrane, adapted for injecting electrical charge carriers into the PC waveguide laterally with respect to the membrane;
the layers being arranged such that the intrinsic and n layers only partially cover the p layer, forming a lateral face extending perpendicularly from the surface of the p layer, a portion of the lateral face forming the face with total internal reflection of the PC waveguide;
the PC waveguide being arranged to be evanescently coupled to a passive semiconductor waveguide in at least one coupling region.
2 . The component according to claim 1 , characterized in that a p contact is arranged on the p layer facing the lateral face and an n contact is arranged on the n layer adjacently to the photonic crystal, such that the contacts are arranged parallel to the PC waveguide.
3 . The component according to claim 1 , characterized in that the photonic crystal is formed by holes extending through the n layer, the intrinsic layer, and the p layer, the holes forming a two-dimensional periodic grating.
4 . The component according to claim 1 , characterized in that the PC waveguide comprises a gain region.
5 . The component according to claim 4 , characterized in that the gain region comprises quantum wells and/or quantum dots.
6 . The component according to claim 4 , characterized in that the width of the PC waveguide varies progressively in the at least one region of coupling to the passive waveguide.
7 . The component according to claim 6 , characterized in that the respective distance of the electrical contacts with respect to the PC waveguide is inversely proportional to the width of the PC waveguide.
8 . The component according to claim 4 , characterized in that the PC waveguide comprises a region having a slow-light regime in which the photonic crystal comprises a local perturbation.
9 . The component according to claim 8 , characterized in that the PC waveguide comprises two regions having a fast-light regime, arranged upstream and downstream respectively of the region having a slow-light regime.
10 . An optical amplifier, comprising an optoelectronic component according to claim 4 , configured to amplify light propagating in the PC waveguide when charge carriers are injected therein.
11 . The component according to claim 1 , in which a resonant optical cavity is formed in the PC waveguide by two mirror regions arranged in the direction of propagation of the PC waveguide and by a region called apodization region.
12 . The component according to claim 11 , characterized in that at least one geometric parameter of the photonic crystal in the apodization region varies gradually between the centre and the ends of the apodization region in the direction of propagation.
13 . The component according to claim 11 , characterized in that it comprises an additional one- or two-dimensional photonic crystal adjacent to the lateral face.
14 . A laser source comprising a resonant optoelectronic component according to claim 11 and in which the PC waveguide comprises a gain region.
15 . An optoelectronic circuit, comprising at least one from:
an optoelectronic component according to claim 1 ,
an amplifier comprising an optoelectronic component configured to amplify light propagating in the PC waveguide when charge carriers are injected therein; and
a laser source comprising a resonant optoelectronic component.