Integrated light receiving and emitting device combined with control circuit wafer and method thereof
The present disclosure relates to an integrated light receiving and emitting device combined with a control circuit wafer and a manufacturing method thereof. The integrated light receiving and emitting device combined with a control circuit wafer according to an exemplary embodiment of the present disclosure includes: a light receiving and emitting unit which has an integrated wafer structure in which a light emitting unit and a light receiving unit are vertically formed on one surface of a single semiconductor substrate by wafer patterning and a control circuit wafer which is combined with the light receiving and emitting unit by vertical bonding to be operated as a single chip device, in which the control circuit wafer is connected to the light emitting unit and the light receiving unit.
1 . An integrated light receiving and emitting device, comprising:
a light receiving and emitting unit having an integrated wafer structure and including:
a single semiconductor substrate; and
a light emitting unit and a light receiving unit that are vertically formed on a surface of the single semiconductor substrate by wafer patterning;
a control circuit wafer combined with the light receiving and emitting unit by vertical bonding to operate as a single chip device,
wherein the control circuit wafer is directly electrically connected to the single semiconductor substrate at another surface of the single semiconductor substrate, without any intervening substrate or electro-optic element between the control circuit wafer and the another surface of the single semiconductor substrate, and is electrically connected through the single semiconductor substrate to the light emitting unit and the light receiving unit and configured to control light receiving and emitting operations of the light emitting unit and the light receiving unit; and
a micro lens array disposed to optically couple the light emitting unit and the light receiving unit to an exterior region, the micro lens array defining a plurality of lens directions, wherein the control circuit wafer is further configured to perform light emitting and light receiving operations along the plurality of lens directions by selecting a lens direction.
2 . The integrated light receiving and emitting device according to claim 1 , wherein the light emitting unit is epitaxially grown on the single semiconductor substrate, and
wherein the light receiving unit is formed on the grown light emitting unit by a continuous process.
3 . The integrated light receiving and emitting device according to claim 1 , wherein the light receiving unit is epitaxially grown on the single semiconductor substrate, and
wherein the light emitting unit is formed on the epitaxially grown light receiving unit by a continuous process.
4 . The integrated light receiving and emitting device according to claim 1 , wherein the light emitting unit and the light receiving unit are vertically formed on one surface of the single semiconductor substrate to have a coaxial structure or a non-coaxial structure.
5 . The integrated light receiving and emitting device according to claim 1 , wherein the control circuit wafer is combined with the light receiving and emitting unit on the another surface of the single semiconductor substrate by the vertical bonding to be operated as a single chip device.
6 . The integrated light receiving and emitting device according to claim 5 , wherein the control circuit wafer is connected to the light emitting unit and the light receiving unit by an on-chip via structure.
7 . The integrated light receiving and emitting device according to claim 5 , wherein the control circuit wafer is connected to the light emitting unit and the light receiving unit by an on-chip wiring structure.
8 . The integrated light receiving and emitting device according to claim 1 , further comprising:
a lens combined on the light receiving and emitting unit by the vertical bonding.
9 . The integrated light receiving and emitting device according to claim 1 , wherein the control circuit wafer is further configured to control the light receiving and emitting operation of the light receiving and emitting unit to scan according to any one control method of sequential driving, non-sequential driving, group setting, row driving, and column driving.
10 . A manufacturing method of an integrated light receiving and emitting device, the manufacturing method comprising:
forming a light receiving and emitting unit having an integrated wafer structure by:
forming a single semiconductor substrate; and
vertically forming a light emitting unit and a light receiving unit on a surface of the single semiconductor substrate by wafer patterning;
combining a control circuit wafer with the light receiving and emitting unit by vertical bonding to be operated as a single chip device including directly bonding the control circuit wafer to another surface of the single semiconductor substrate such that no intervening substrate or electro-optic element is disposed between the control circuit wafer and the another surface of the single semiconductor substrate;
electrically connecting the light emitting unit and the light receiving unit to the control circuit wafer through the single semiconductor substrate to control the light receiving and emitting operation of the light emitting unit and the light receiving unit;
combining a micro lens array with the light receiving and emitting unit such that the micro lens array optically couples the light emitting unit and the light receiving unit to an exterior region and defines a plurality of lens directions; and
controlling, by the control circuit wafer, light emitting and light receiving operations along the plurality of lens directions by selecting a lens direction.
11 . The manufacturing method according to claim 10 , wherein in the forming of a light receiving and emitting unit, the light emitting unit is epitaxially grown on the single semiconductor substrate, and
wherein the light receiving unit is formed on the grown light emitting unit by a continuous process.
12 . The manufacturing method according to claim 10 , wherein in the forming of a light receiving and emitting unit, the light receiving unit is epitaxially grown on the single semiconductor substrate, and
wherein the light emitting unit is formed on the epitaxially grown light receiving unit by a continuous process.
13 . The manufacturing method according to claim 10 , wherein in the forming of a light receiving and emitting unit, the light emitting unit and the light receiving unit are vertically formed on one surface of the single semiconductor substrate to have a coaxial structure or a non-coaxial structure.
14 . The manufacturing method according to claim 10 , wherein the control circuit wafer is combined with the light receiving and emitting unit on the another surface of the single semiconductor substrate by the vertical bonding to be operated as a single chip device.
15 . The manufacturing method according to claim 14 , wherein in the connecting to a control circuit wafer, the control circuit wafer is connected to the light emitting unit and the light receiving unit by an on-chip via structure.
16 . The manufacturing method according to claim 14 , wherein in the connecting to a control circuit wafer, the control circuit wafer is connected to the light emitting unit and the light receiving unit by an on-chip wiring structure.
17 . The manufacturing method according to claim 10 , further comprising:
combining a lens on the light receiving and emitting unit by the vertical bonding.