Charge pump circuit and phase-locked loop circuit
According to one embodiment, a charge pump circuit includes: a current source; a first current mirror including an input terminal connected to the current source; a second current mirror including an input terminal connected to an output terminal of the first current mirror; a third current mirror including an input terminal connected to a first output terminal of the second current mirror; a first switch including a first end connected to a second output terminal of the second current mirror via a first node, and including a second end; and an output terminal connected to an output terminal of the third current mirror and the second end of the first switch via a second node.
1 . A charge pump circuit comprising:
a current source;
a first current mirror including an input terminal connected to the current source;
a second current mirror including an input terminal connected to an output terminal of the first current mirror;
a third current mirror including an input terminal connected to a first output terminal of the second current mirror;
a fourth current mirror including an input terminal connected to a second output terminal of the second current mirror, and including an output terminal connected to a first node;
a first switch including a first end connected to a third output terminal of the second current mirror via a second node, and including a second end connected to the first node;
a second switch including a first end connected to an output terminal of the third current mirror via a third node, and including a second end connected to the first node; and
an output terminal connected to the first node.
2 . The charge pump circuit of claim 1 , wherein
each of the first current mirror, the third current mirror, and the fourth current mirror includes a transistor having a first conductivity type, and
the second current mirror includes a transistor having a second conductivity type that is different from the first conductivity type.
3 . The charge pump circuit of claim 2 , wherein
the transistor having the first conductivity type includes an N-type MOSFET, and
the transistor having the second conductivity type includes a P-type MOSFET.
4 . The charge pump circuit of claim 1 , wherein
the first current mirror includes:
a first transistor including a drain and a gate that are connected to the current source via a fourth node; and
a second transistor including a gate connected to the fourth node, and including a drain connected to the input terminal of the second current mirror via a fifth node,
the second current mirror includes:
a third transistor including a drain and a gate that are connected to the fifth node;
a fourth transistor including a drain connected to the input terminal of the fourth current mirror via a sixth node, and a gate connected to the fifth node; and
a fifth transistor including a drain connected to the second node, and a gate connected to the fifth node, and
the fourth current mirror includes:
a sixth transistor including a drain and a gate that are connected to the sixth node; and
a seventh transistor including a drain connected to the first node, and a gate connected to the sixth node.
5 . The charge pump circuit of claim 4 , wherein
a gate length of each of the first transistor, the second transistor and the third transistor is equal to or less than about ½ of a gate length of the seventh transistor, and
a gate width of each of the first transistor, the second transistor and the third transistor is equal to or less than about ½ of a gate width of the seventh transistor.
6 . The charge pump circuit of claim 4 , wherein
the second current mirror further includes an eighth transistor including a drain connected to the input terminal of the third current mirror via a seventh node, and including a gate connected to the fifth node, and
the third current mirror includes:
a ninth transistor including a drain and a gate that are connected to the seventh node; and
a tenth transistor including a drain connected to the third node, and a gate connected to the seventh node.
7 . The charge pump circuit of claim 6 , wherein
a gate length of each of the first transistor, the second transistor, the third transistor, the eighth transistor and the ninth transistor is equal to or less than about ½ of a gate length of the seventh transistor, and
a gate width of each of the first transistor, the second transistor, the third transistor, the eighth transistor and the ninth transistor is equal to or less than about ½ of a gate width of the seventh transistor.
8 . The charge pump circuit of claim 1 , further comprising:
a third switch including a first end connected to the second node, and including a second end; and
a first resistor including one end connected to the second end of the third switch.
9 . The charge pump circuit of claim 8 , wherein each of the first switch and the third switch includes a transistor.
10 . The charge pump circuit of claim 8 , wherein
the third switch is configured to be in an OFF state, in a case where the first switch is in an ON state, and
the third switch is configured to be in an ON state, in a case where the first switch is in an OFF state.
11 . The charge pump circuit of claim 8 , further comprising:
a fourth switch including a first end connected to the third node, and including a second end; and
a second resistor including one end connected to the second end of the fourth switch.
12 . The charge pump circuit of claim 11 , wherein
each of the second switch and the fourth switch includes a transistor having a first conductivity type, and
each of the first switch and the third switch includes a transistor having a second conductivity type that is different from the first conductivity type.
13 . The charge pump circuit of claim 12 , wherein
the transistor having the first conductivity type includes an N-type MOSFET, and
the transistor having the second conductivity type includes a P-type MOSFET.
14 . The charge pump circuit of claim 11 , wherein
the third switch is configured to be in an OFF state, in a case where the first switch is in an ON state,
the third switch is configured to be in an ON state, in a case where the first switch is in an OFF state,
the fourth switch is configured to be in an OFF state, in a case where the second switch is in an ON state, and
the fourth switch is configured to be in an ON state, in a case where the second switch is in an OFF state.
15 . A phase-locked loop circuit comprising:
the charge pump circuit of claim 1 ;
a phase frequency detector connected to the charge pump circuit;
a loop filter connected to the charge pump circuit;
a voltage-controlled oscillator connected to the loop filter; and
a divider connected to the phase frequency detector and the voltage-controlled oscillator.
16 . The phase-locked loop circuit of claim 15 , wherein the charge pump circuit is configured to:
output a first current to the loop filter via the output terminal in a case where the first switch is in an ON state; and
input a second current from the loop filter via the output terminal in a case where the first switch is in an OFF state.
17 . The phase-locked loop circuit of claim 16 , wherein in a first state, a total amount of charge based on the first current that is output from the charge pump circuit to the loop filter during one cycle of a signal that is input to the phase frequency detector is substantially equal to a total amount of charge based on the second current that is input from the loop filter to the charge pump circuit during the cycle.
18 . The phase-locked loop circuit of claim 15 , wherein the phase frequency detector is configured to control the first switch by applying a voltage to the first switch.
19 . The phase-locked loop circuit of claim 15 , wherein
each of the first current mirror, the third current mirror, and the fourth current mirror includes a transistor having a first conductivity type, and
the second current mirror includes a transistor having a second conductivity type that is different from the first conductivity type.
20 . The phase-locked loop circuit of claim 19 , wherein
the transistor having the first conductivity type includes an N-type MOSFET, and
the transistor having the second conductivity type includes a P-type MOSFET.