IP Library › Granted Patent US 12676726
Granted Patent B2
US 12676726 · App. 18/415,552 · Granted Jul 7, 2026

Fano based time division duplexing switch

Inventors: Thamer Almoneef (Al Kharj, SA); Abdullah Aljanah (Al Kharj, SA); Omar Siddiqui (Madinah, SA); Mian Wahaj Anwar (Islamabad, PK); Muhammad Rashad Ramzan (Islamabad, PK)
Assignee: Prince Sattam Bin Abdulaziz University (PSAU)
H04L5/1461H01P7/00H04B1/48
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Quick Facts
Patent No.
US 12676726
App. No.
18/415,552
Granted
Jul 7, 2026
Kind
B2
Abstract

An apparatus comprising a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line. The apparatus further comprises a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

Claims (37)

1 . A system comprising:

a transmitter comprising:

a power amplifier to amplify a transmit signal; and

a first band pass filter to band limit an output of the power amplifier;

a receiver comprising:

a second band pass filter to band limit a receive signal; and

a low noise amplifier to amplify an output of the second band pass filter;

a first time division duplexing switch circuit coupled to the transmitter;

a second time division duplexing switch circuit coupled to the receiver; and

an antenna coupled to the first and second time division duplexing switch circuits, wherein the first time division duplexing switch circuit comprises:

a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line, wherein the antenna is coupled to a first port of the resonator structure, and wherein the first band pass filter is coupled to a second port of the resonator structure; and

a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

2 . The system of claim 1 , wherein the second time division duplexing switch circuit comprises:

a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line, wherein the antenna is coupled to a first port of the resonator structure, and wherein the second band pass filter is coupled to a second port of the resonator structure; and

a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

3 . The system of claim 2 , wherein the cross-coupling line structure and the resonator structure have same shape.

4 . The system of claim 1 , wherein the first two symmetric ring-shaped stubs or the second two symmetric ring-shaped stubs have one of:

hexagonal shape;

parabolic shape;

rectangular shape; or

circular shape.

5 . An apparatus comprising:

a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line; and

a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

6 . The apparatus of claim 5 , wherein the resonator structure and the cross-coupling line structure are on different metal layers of an integrated circuit metal layer stack.

7 . The apparatus of claim 6 , wherein the integrated circuit metal layer stack is one of a CMOS, GaAs, BiCMOS, BJT, InSb, or GaN metal layer stack.

8 . The apparatus of claim 5 , wherein the DC or pulsed voltage source is configured to turn on to provide current through the cross-coupling line structure.

9 . The apparatus of claim 5 , wherein the first two symmetric ring-shaped stubs or the second two symmetric ring-shaped stubs have one of:

hexagonal shape;

parabolic shape;

rectangular shape; or

circular shape.

10 . The apparatus of claim 5 , wherein the cross-coupling line structure and the resonator structure have similar shape.

11 . The apparatus of claim 5 , wherein the cross-coupling line structure is above or below the resonator structure.

12 . The apparatus of claim 5 , wherein a direction of current through the cross-coupling line structure changes an amplitude response and a phase response of the resonator structure.

13 . The apparatus of claim 5 , wherein an amplitude of a current through the cross-coupling line structure changes an amplitude response and a phase response of the resonator structure.

14 . The apparatus of claim 5 , wherein the resonator structure and the cross-coupling line structure are on different metal layers of printed circuit board.