IP Library › Granted Patent US 12677357
Granted Patent B2
US 12677357 · App. 19/009,336 · Granted Jul 7, 2026

Display device, module, and electronic device

Inventor: Toshiyuki Isa (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H05B33/26G06F3/041G06F3/0443G06F3/0446H10K59/1315H10K59/40H10K71/80H10K77/111G06F3/0445G06F2203/04102G06F2203/04111H10K59/1201H10K59/131H10K2102/311Y02E10/549
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Quick Facts
Patent No.
US 12677357
App. No.
19/009,336
Granted
Jul 7, 2026
Kind
B2
Abstract

The display defects of a display device are reduced. The display quality of the display device is improved. The display device includes a display panel and a first conductive layer. The display panel includes a display element including a pair of electrodes. An electrode of the pair of electrodes which is closer to one surface of the display panel is supplied with a constant potential. A constant potential is supplied to the first conductive layer. The second conductive layer provided on the other surface of the display panel is in contact with the first conductive layer, whereby the second conductive layer is also supplied with the constant potential. The second conductive layer includes a portion not fixed to the first conductive layer.

Claims (60)

1 . A display device comprising:

a flexible substrate;

a first insulating layer over the flexible substrate;

a first conductive layer over the first insulating layer, the first conductive layer comprising a region configured to be a first gate electrode of a first transistor;

a second insulating layer over the first conductive layer;

a first semiconductor layer and a second semiconductor layer over the second insulating layer, each of the first semiconductor layer and the second semiconductor layer comprising an oxide semiconductor;

a third insulating layer over the first semiconductor layer and the second semiconductor layer;

a second conductive layer and a third conductive layer over the third insulating layer;

a fourth insulating layer over the second conductive layer;

a fourth conductive layer over the fourth insulating layer, the fourth conductive layer comprising a region configured to be one of a source and a drain of the first transistor; and

a first electrode of a light-emitting element electrically connected to the fourth conductive layer,

wherein the first semiconductor layer comprises a region configured to be a channel formation region of the first transistor,

wherein the second semiconductor layer comprises a region configured to be a first electrode of a capacitor,

wherein the second conductive layer comprises a region configured to be a second gate electrode of the first transistor,

wherein the third conductive layer comprises a region configured to be a second electrode of the capacitor, and

wherein each of the first semiconductor layer and the second semiconductor layer overlaps with the first electrode of the light-emitting element.

2 . The display device according to claim 1 , further comprising a fifth conductive layer over the fourth insulating layer,

wherein the fifth conductive layer overlaps with the first electrode of the light-emitting element.

3 . The display device according to claim 1 , further comprising a fifth conductive layer over the fourth insulating layer,

wherein the fifth conductive layer is electrically connected to one of a source and a drain of a second transistor and the second semiconductor layer.

4 . A display device comprising:

a flexible substrate;

a first insulating layer over the flexible substrate;

a first conductive layer over the first insulating layer, the first conductive layer comprising a region configured to be a first gate electrode of a first transistor;

a second insulating layer over the first conductive layer;

a first semiconductor layer and a second semiconductor layer over the second insulating layer, each of the first semiconductor layer and the second semiconductor layer comprising an oxide semiconductor;

a third insulating layer over the first semiconductor layer and the second semiconductor layer;

a second conductive layer and a third conductive layer over the third insulating layer;

a fourth insulating layer over the second conductive layer;

a fourth conductive layer and a fifth conductive layer over the fourth insulating layer, the fourth conductive layer comprising a region configured to be one of a source and a drain of the first transistor; and

a first electrode of a light-emitting element electrically connected to the fourth conductive layer,

wherein the first semiconductor layer comprises a region configured to be a channel formation region of the first transistor,

wherein the second semiconductor layer comprises a region configured to be a first electrode of a capacitor,

wherein the second conductive layer comprises a region configured to be a second gate electrode of the first transistor,

wherein the third conductive layer comprises a region configured to be a second electrode of the capacitor,

wherein each of the first semiconductor layer and the second semiconductor layer overlaps with the first electrode of the light-emitting element,

wherein the fifth conductive layer is electrically connected to one of a source and a drain of a second transistor, the second semiconductor layer, and one of a source and a drain of a third transistor, and

wherein the first conductive layer and the second conductive layer are electrically connected to each other.

5 . A display device comprising:

a flexible substrate;

a first insulating layer over the flexible substrate;

a first conductive layer over the first insulating layer, the first conductive layer comprising a region configured to be a first gate electrode of a first transistor;

a second insulating layer over the first conductive layer;

a first semiconductor layer over the second insulating layer, the first semiconductor layer comprising an oxide semiconductor;

a third insulating layer over the first semiconductor layer;

a second conductive layer and a third conductive layer over the third insulating layer;

a fourth insulating layer over the second conductive layer;

a fourth conductive layer and a fifth conductive layer over the fourth insulating layer;

a fifth insulating layer over the fourth conductive layer and the fifth conductive layer; and

a first electrode of a light-emitting element over the fifth insulating layer,

wherein the first semiconductor layer comprises a first region configured to be a channel formation region of the first transistor and a second region configured to be a first electrode of a capacitor,

wherein the second conductive layer comprises a region configured to be a second gate electrode of the first transistor,

wherein the third conductive layer comprises a region configured to be a second electrode of the capacitor,

wherein the fourth conductive layer is electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of a second transistor,

wherein the fifth conductive layer is electrically connected to the other of the source and the drain of the first transistor and the first electrode of the capacitor, and

wherein the first semiconductor layer overlaps with the first electrode of the light-emitting element.

6 . The display device according to claim 5 , wherein the first semiconductor layer and the fifth conductive layer overlap with the first electrode of the light-emitting element.

7 . The display device according to claim 5 ,

wherein the first conductive layer and the second conductive layer are electrically connected to each other, and

wherein the oxide semiconductor comprises indium, gallium, and zinc.