Semiconductor device and method of manufacturing the same
According to one embodiment, a semiconductor device includes a first insulating layer, a gate electrode layer provided on the first insulating layer, a second insulating layer provided on the gate electrode layer, an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer, and a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer.
1 . A semiconductor device comprising:
a first electrode;
a first insulating layer provided above the first electrode;
a gate electrode layer provided on the first insulating layer;
a second insulating layer provided on the gate electrode layer;
an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer;
a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer; and
a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer, wherein the first insulating layer, the gate electrode layer and the second insulating layer are interposed between the first hydrogen barrier film and a layer including the oxide semiconductor layer and the gate insulating layer, wherein a portion of the first hydrogen barrier film is provided between the first electrode and the first insulating layer.
2 . The semiconductor device of claim 1 , further comprising:
an another oxide semiconductor layer other than the oxide semiconductor layer, provided along the second insulating layer, the gate electrode layer and the first insulating layer; and
an another gate insulating layer other than the gate insulating layer, provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the another oxide semiconductor layer.
3 . The semiconductor device of claim 2 , further comprising:
a third insulating layer provided on side surfaces of the first insulating layer, the gate electrode layer and the second insulating layer, wherein the first hydrogen barrier film is interposed between the third insulating layer and a layer including the first insulating layer, the gate electrode layer and the second insulating layer.
4 . The semiconductor device of claim 3 , wherein
a lower surface and an upper surface of the third insulating layer are not covered with a hydrogen barrier film.
5 . The semiconductor device of claim 4 , further comprising:
an electrode provided on an upper surface of the oxide semiconductor layer; and
a second hydrogen barrier film provided on a side surface of the electrode.
6 . The semiconductor device of claim 5 , wherein
the electrode includes a conductive film having a hydrogen barrier property.
7 . The semiconductor device of claim 6 , further comprising:
a substrate; and
a circuit provided in the substrate, wherein
the oxide semiconductor layer is provided between the substrate and the electrode.
8 . The semiconductor device of claim 7 , wherein
the oxide semiconductor layer contains indium, gallium, zinc and oxygen.
9 . The semiconductor device of claim 7 , wherein
the first hydrogen barrier film is an insulating film with a lower hydrogen permeability than a silicon dioxide film.
10 . The semiconductor device of claim 7 , wherein
the first hydrogen barrier film includes:
an insulating film with a lower hydrogen permeability than a silicon dioxide film; and
a conductive film with a lower hydrogen permeability than a silicon dioxide film.
11 . The semiconductor device of claim 9 , wherein
the insulating film with the lower hydrogen permeability than the silicon dioxide film is a silicon nitride film, an alumina film, a titanium oxide film or a chromium oxide film.
12 . The semiconductor device of claim 10 , wherein
the insulating film with the lower hydrogen permeability than the silicon dioxide film is a silicon nitride film, an alumina film, a titanium oxide film or a chromium oxide film.
13 . The semiconductor device of claim 10 , wherein
the conductive film with the lower hydrogen permeability than the silicon dioxide film is a ruthenium film, a titanium nitride film or a titanium carbide film.
14 . The semiconductor device of claim 12 , wherein
the conductive film with the lower hydrogen permeability than the silicon dioxide film is a ruthenium film, a titanium nitride film or a titanium carbide film.
15 . The semiconductor device according to claim 1 , wherein the first hydrogen barrier film provided on the first electrode.
16 . The semiconductor device according to claim 1 , wherein a portion of the first hydrogen barrier film, the first insulating layer, the gate electrode layer, and the second insulating layer are provided above the first electrode in a vertical direction.
17 . The semiconductor device of claim 1 , further comprising:
a transistor including the oxide semiconductor layer, the gate insulating layer, and the gate electrode layer; and
a capacitor provided below the transistor.