Memory including memory cells having different sizes
A memory may include a first memory block including a plurality of first memory cells; and a second memory block including a plurality of second memory cells each having a larger size than each of the plurality of first memory cells. Normal data may be stored in the first memory block, and critical data requiring reliability may be stored in the second memory block.
1 . A memory comprising:
a first memory block including a plurality of first memory cells; and
a second memory block including a plurality of second memory cells each having a size larger than each of the plurality of first memory cells,
wherein each of the first memory cells is configured to store more bits per cell than each of the second memory cells, and
wherein normal data is stored in the first memory block, and critical data requiring reliability is stored in the second memory block.
2 . The memory of claim 1 , wherein the critical data includes one or more of buffer data, meta data, boot data, and setting data.
3 . The memory of claim 1 , wherein the first memory block includes first memory strings including the first memory cells, the first memory strings each having a first area, and
wherein the second memory block includes second memory strings including the second memory cells, the second memory strings each having a second area.
4 . The memory of claim 3 , wherein shapes of the first memory strings are different from shapes of the second memory strings.
5 . The memory of claim 3 , wherein the first memory block further includes first gate structures each including one or more first select lines and a plurality of first word lines, and
wherein each of the first gate structures includes a first opening and a pair of the first memory strings, located in the first opening.
6 . The memory of claim 5 , wherein the second memory block further includes second gate structures each including one or more second select lines and a plurality of second word lines, and
wherein each of the second gate structures includes a second opening and the one second memory string, located in the second opening.
7 . The memory of claim 6 , wherein an activation voltage level of at least one of the first select lines is different from an activation voltage level of at least one of the second select lines.
8 . The memory of claim 6 , wherein at least one of the first select lines is overdriven when activated,
wherein at least one of the second select lines is overdriven when activated, and
wherein an overdriving voltage level of at least one of the first select lines is different from an overdriving voltage level of at least one of the second select lines.
9 . The memory of claim 6 , wherein at least one of the first select lines is overdriven when activated,
wherein at least one of the second select lines is overdriven when activated, and
wherein a length of an overdriving period of at least one of the first select lines is different from a length of an overdriving period of at least one of the second select lines.
10 . The memory of claim 6 , wherein a size of a first pass transistor for driving at least one of the first select lines is different from a size of a second pass transistor for driving at least one of the second select lines.
11 . The memory of claim 8 , wherein at least one of the first select lines is a drain select line and at least one of the second select lines is a drain select line.
12 . A memory comprising:
first memory strings each including a plurality of first memory cells;
second memory strings including a plurality of second memory cells each having a size larger than each of the plurality of first memory cells;
first bit lines connected to the first memory strings; and
second bit lines connected to the second memory strings,
wherein each of the first memory cells is configured to store more bits per cell than each of the second memory cells, and
wherein during a read operation, voltage levels of the first bit lines and voltage levels of the second bit lines are differently controlled.
13 . The memory of claim 12 , wherein a pair of the first memory strings and one of the second memory strings are arranged to intersect each other in a zig-zag manner within one memory block.
14 . The memory of claim 12 , wherein during the read operation, precharge voltage levels of the first bit lines are different from precharge voltage levels of the second bit lines.
15 . The memory of claim 12 , wherein during the read operation, a length of an evaluation period in which the first bit lines are connected to first sensing nodes is different from a length of an evaluation period in which the second bit lines are connected to second sensing nodes.
16 . A memory comprising:
a memory cell array including a first memory block and a second memory block, the first memory block including a plurality of first memory cells having a first string structure, the second memory block including a plurality of second memory cells having a second string structure different from the first string structure; and
a control logic configured to:
store normal data in the first memory block, and
store critical data in the second memory block, the reliability of the critical data being greater than that of the normal data,
wherein each of the first memory cells having a size smaller than each of the plurality of second memory cells is configured to store more bits per cell than each of the second memory cells.
17 . The memory of claim 16 , wherein the first memory cells and the second memory cells are arranged in a zig-zag pattern.
18 . The memory of claim 16 , wherein the critical data includes at least one of meta data, boot data, setting data and buffer data.