Semiconductor device structure
A semiconductor device structure and method of manufacturing the same are provided. The semiconductor device structure includes an interposer and a first electronic component. The interposer includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first cache memory and a first memory control circuit. The second semiconductor die includes a second cache memory and a second memory control circuit. The first electronic component is disposed on the interposer and in communication with the first semiconductor die and the second semiconductor die.
1 . A semiconductor device structure, comprising:
an interposer having a first surface and a second surface opposite to the first surface, wherein the interposer comprises a first semiconductor die comprising a first semiconductor substrate, a first circuit region disposed on the first semiconductor substate, a first cache memory disposed within the first circuit region, and a first memory control circuit which is disposed within the first circuit region and is spaced apart from the first cache memory;
a first redistribution structure disposed on the second surface of the interposer and in contact with the first cache memory and the first memory control circuit; and
a first electronic component disposed on the first redistribution structure, wherein the first electronic component is electrically connected to the first cache memory;
wherein the first electronic component is vertically overlapped with first cache memory and is free from vertically overlapped with the first memory control circuit.
2 . The semiconductor device structure of claim 1 , wherein the interposer further comprises a second semiconductor die, and the second semiconductor die comprises a second semiconductor substrate, a second circuit region disposed on the second semiconductor substate, a second cache memory disposed within the second circuit region, and a second memory control circuit which is disposed within the second circuit region and is spaced apart from the second cache memory;
wherein the first electronic component is vertically overlapped with second cache memory and is free from vertically overlapped with the second memory control circuit.
3 . The semiconductor device structure of claim 2 , wherein the first electronic component is in communication with either the first cache memory, the second cache memory, or both by the first redistribution structure.
4 . The semiconductor device structure of claim 2 , wherein the first electronic component overlaps the first semiconductor die and the second semiconductor die.
5 . The semiconductor device structure of claim 2 , wherein the first cache memory and the first memory control circuit of the first semiconductor die and the second cache memory and the second memory control circuit of the second semiconductor die have a mirror symmetry that the first cache memory is closer to the second cache memory than the first memory control circuit is, such that the first cache memory and the second cache memory are positioned between the first memory control circuit and the second memory control circuit.
6 . The semiconductor device structure of claim 2 , wherein the first cache memory is closer to the second memory control circuit than to the second cache memory.
7 . The semiconductor device structure of claim 2 , wherein the interposer further comprises an encapsulant encapsulating the first semiconductor die and the second semiconductor die, wherein the first cache memory and the second cache memory are separated by the encapsulant.
8 . The semiconductor device structure of claim 7 , wherein the first redistributions structure covers the first semiconductor die, the second semiconductor die, and the encapsulant.
9 . The semiconductor device structure of claim 1 , further comprising:
a second electronic component disposed on the first redistribution structure, wherein the first electronic component is in communication with the second electronic component by the first redistribution structure.
10 . The semiconductor device structure of claim 9 , wherein the second electronic component comprises a dynamic random access memory (DRAM).
11 . The semiconductor device structure of claim 9 , wherein the second electronic component overlaps the first memory control circuit and is free from overlapping with the first cache memory.
12 . The semiconductor device structure of claim 1 , further comprising:
a second redistribution structure disposed on the first surface of the interposer and in contact with the first semiconductor substrate.
13 . The semiconductor device structure of claim 12 , wherein the first semiconductor die comprises a through via extending between the first cache memory and the second redistribution structure.
14 . The semiconductor device structure of claim 12 , wherein the interposer comprises an encapsulant encapsulating the first semiconductor die, and the encapsulant is disposed between the first redistribution structure and the second redistribution structure.