Metal insulator metal capacitor (MIM capacitor)
A MIM capacitor including a bottom metal layer on a substrate, a first contact window in the bottom metal layer; and a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, where the first dielectric spacer has a rounded upper surface, where a bottom most surface of the bottom metal layer is substantially flush with a bottom most surface of the first insulator layer. A method including forming a bottom metal layer on a substrate, forming a first contact window in the bottom metal layer, and forming a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, wherein the first dielectric spacer has a rounded upper surface.
1 . A metal insulator metal capacitor (MIM capacitor) comprising:
a bottom metal layer on a substrate;
a first contact window in the bottom metal layer;
a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, wherein the first dielectric spacer has a rounded upper surface;
a first insulator layer on the bottom metal layer and on the first dielectric spacer, wherein the first insulator layer conforms to a rounded profile of the first dielectric spacer,
a middle metal layer on the first insulator layer;
a second insulator layer on the middle metal layer; and
a top metal layer on the second insulator layer with a third contact window vertically aligned above the first contact window.
2 . The MIM capacitor according to claim 1 , wherein
the first insulator layer comprises a different material than the first dielectric spacer.
3 . The MIM capacitor according to claim 2 ,
wherein the middle metal layer comprises a second contact window, and wherein the middle metal layer conforms to a rounded profile of the first insulator layer; and further comprising:
a second dielectric spacer surrounding vertical side surfaces of the middle metal layer in the second contact window, wherein the second dielectric spacer has a rounded upper surface.
4 . The MIM capacitor according to claim 3 , wherein the second insulator layer is further on the second dielectric spacer, and wherein
the second insulator layer conforms to a rounded profile of the middle metal layer and the second dielectric spacer, and wherein
the second insulator layer comprises a different material than the second dielectric spacer.
5 . The MIM capacitor according to claim 4 ,
wherein the top metal layer conforms to a rounded profile of the second insulator layer; and further comprising:
a first contact to the middle metal layer, wherein the first contact is through the third contact window and through the first contact window.
6 . The MIM capacitor according to claim 5 , further comprising:
a second contact to the top metal layer and to the bottom metal layer, wherein the second contact is through the second contact window.
7 . The MIM capacitor according to claim 1 , wherein
the first dielectric spacer comprises an outline of a rectangular shape from a top view.
8 . A metal insulator metal capacitor (MIM capacitor) comprising:
a bottom metal layer on a substrate;
a first contact window in the bottom metal layer;
a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, wherein the first dielectric spacer has a rounded upper surface,
a first insulator layer on the bottom metal layer and on the first dielectric spacer, wherein the first insulator layer conforms to a rounded profile of the first dielectric spacer,
a middle metal layer on the first insulator layer;
a second insulator layer on the middle metal layer; and
a top metal layer on the second insulator layer with a third contact window vertically aligned above the first contact window; wherein
a bottom most surface of the bottom metal layer is substantially flush with a bottom most surface of the first insulator layer.
9 . The MIM capacitor according to claim 8 , wherein
the first insulator layer comprises a different material than the first dielectric spacer.
10 . The MIM capacitor according to claim 9 ,
wherein the middle metal layer comprises a second contact window, and wherein the middle metal layer conforms to a rounded profile of the first insulator layer; and further comprising:
a second dielectric spacer surrounding vertical side surfaces of the middle metal layer in the second contact window, wherein the second dielectric spacer has a rounded upper surface.
11 . The MIM capacitor according to claim 10 , wherein the second insulator layer is further on the second dielectric spacer, and wherein
the second insulator layer conforms to a rounded profile of the middle metal layer and the second dielectric spacer, and wherein
the second insulator layer comprises a different material than the second dielectric spacer.
12 . The MIM capacitor according to claim 11 ,
wherein the top metal layer conforms to a rounded profile of the second insulator layer; and further comprising:
a first contact to the middle metal layer, wherein the first contact is through the third contact window and through the first contact window.
13 . The MIM capacitor according to claim 12 , further comprising:
a second contact to the top metal layer and to the bottom metal layer, wherein the second contact is through the second contact window.
14 . The MIM capacitor according to claim 8 , further comprising:
the first dielectric spacer comprises an outline of a rectangular shape from a top view.
15 . A method of forming a metal insulator metal capacitor (MIM capacitor) comprising:
forming a bottom metal layer on a substrate;
forming a first contact window in the bottom metal layer;
forming a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, wherein the first dielectric spacer has a rounded upper surface;
forming a first insulator layer on the bottom metal layer and on the first dielectric spacer, wherein the first insulator layer conforms to a rounded profile of the first dielectric spacer,
forming a middle metal layer on the first insulator layer;
forming a second insulator layer on the middle metal layer; and
forming a top metal layer on the second insulator layer with a third contact window vertically aligned above the first contact window.
16 . The method according to claim 15 , wherein
the first insulator layer comprises a different material than the first dielectric spacer.
17 . The method according to claim 16 ,
wherein the middle metal layer comprises a second contact window, and wherein the middle metal layer conforms to a rounded profile of the first insulator layer; and further comprising:
forming a second dielectric spacer surrounding vertical side surfaces of the middle metal layer in the second contact window, wherein the second dielectric spacer has a rounded upper surface.
18 . The method according to claim 17 , wherein the second insulator layer is further formed on the second dielectric spacer, and wherein
the second insulator layer conforms to a rounded profile of the middle metal layer and the second dielectric spacer, wherein
the second insulator layer comprises a different material than the second dielectric spacer.
19 . The method according to claim 18 , wherein the top metal layer conforms to a rounded profile of the second insulator layer; and further comprising:
forming a first contact to the middle metal layer, wherein the first contact is through the third contact window and through the first contact window.
20 . The method according to claim 15 , wherein
a bottom most surface of the bottom metal layer is substantially flush with a bottom most surface of the first insulator layer.