Electronic component based on p-doped gallium nitride

1 . An electronic component comprising:

a substrate

a plurality of active stacks, each active stack being formed above the substrate and including:

a layer of p-type doped Gallium Nitride GaN disposed above the substrate;

a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN;

wherein the electronic component includes two side zones located on either side of the respective p-type doped GaN layer of each active stack, the two side zones being oxygen-implanted,

wherein acceptors of the p-type doped Gallium Nitride GaN layer are Magnesium atoms, and

wherein a width of each active stack and a width of each of the oxygen-implanted zones are less than or equal to 20 μm and greater than or equal to 1 μm, the width being measured parallel to the plane of the layers in line with each active stack and the oxygen-implanted zones.

2 . The electronic component according to claim 1 , wherein each active stack includes:

an n-type doped GaN layer disposed on the p-type doped GaN layer;

an unintentionally doped GaN layer disposed on the n-type doped GaN layer; and

a semiconductor layer disposed on the unintentionally doped GaN layer to form a two-dimensional electron gas;

the component further including a source zone, a drain zone and a control gate zone formed on or in the semiconductor layer to form a two-dimensional electron gas.

3 . The electronic component according to claim 2 , wherein

each active stack includes:

an n-type doped GaN layer disposed on the p-type doped GaN layer;

an unintentionally doped GaN layer disposed on the n-type doped GaN layer;

a semiconductor layer disposed on the unintentionally doped GaN layer to form a two-dimensional electron gas;

two oxygen-implanted side zones extending on either side of the p-type doped GaN layer, of the n-type doped GaN layer, of the unintentionally doped GaN layer and of the semiconductor layer to form a two-dimensional electron gas,

the source, drain and control gate zones being common to the plurality of active stacks;

each active stack being electrically insulated from the adjacent active stack by one of the oxygen-implanted side zones.

4 . The electronic component according to claim 3 , wherein the plurality of said stacks is surrounded by an insulation zone, said insulation zone being an oxygen-implanted zone.

5 . The electronic component according to claim 2 , wherein each of the two oxygen-implanted side zones extends in or under the gate zone and in or under the drain zone and the source zone.

6 . The electronic component according to claim 2 , wherein each of the two oxygen-implanted side zones extends in or under the gate zone and does not extend in or under the drain zone and the source zone.

7 . An electronic component comprising:

a substrate

a plurality of active stacks, each active stack being formed above the substrate and including:

a layer of p-type doped Gallium Nitride GaN disposed above the substrate;

a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN;

wherein the electronic component includes two side zones located on either side of the respective p-type doped GaN layer of each active stack, the two side zones being oxygen-implanted,

wherein each active stack includes:

an n-type doped GaN layer disposed on the p-type doped GaN layer;

an unintentionally doped GaN layer disposed on the n-type doped GaN layer; and

a semiconductor layer disposed on the unintentionally doped GaN layer to form a two-dimensional electron gas;

the component further including a source zone, a drain zone and a control gate zone formed on or in the semiconductor layer to form a two-dimensional electron gas;

the two oxygen-implanted side zones also extending on either side of the n-type doped GaN layer, of the unintentionally doped GaN layer and of the semiconductor layer to form a two-dimensional electron gas.

8 . The electronic component according to claim 7 , wherein acceptors of the p-type doped Gallium Nitride GaN layer are Magnesium atoms.

9 . The electronic component according to claim 8 , wherein a width of each active stack and a width of each of the oxygen-implanted zones are less than or equal to 20 μm and greater than or equal to 1 μm, the width being measured parallel to the plane of the layers in line with each active stack and the oxygen-implanted zones.

10 . The electronic component according to claim 7 , wherein

each active stack includes:

an n-type doped GaN layer disposed on the p-type doped GaN layer;

an unintentionally doped GaN layer disposed on the n-type doped GaN layer;

a semiconductor layer disposed on the unintentionally doped GaN layer to form a two-dimensional electron gas;

two oxygen-implanted side zones extending on either side of the p-type doped GaN layer, of the n-type doped GaN layer, of the unintentionally doped GaN layer and of the semiconductor layer to form a two-dimensional electron gas

the source, drain and control gate zones being common to the plurality of active stacks;

each active stack being electrically insulated from the adjacent active stack by one of the oxygen-implanted side zones.

11 . The electronic component according to claim 10 , wherein the plurality of said stacks is surrounded by an insulation zone, said insulation zone being an oxygen-implanted zone.

12 . The electronic component according to claim 7 , wherein each of the two oxygen-implanted side zones extends in or under the gate zone and in or under the drain zone and the source zone.

13 . The electronic component according to claim 7 , wherein each of the two oxygen-implanted side zones extends in or under the gate zone and does not extend in or under the drain zone and the source zone.

14 . A method for manufacturing an electronic component including

a substrate

a plurality of active stacks, each active stack being formed above the substrate and including:

a layer of p-type doped Gallium Nitride GaN disposed above the substrate;

a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN;

wherein the electronic component includes two side zones located on either side of the respective p-type doped GaN layer of each active stack, the two side zones being oxygen-implanted, the method comprising:

making on the substrate the plurality of active stacks formed above the substrate, each active stack including:

the layer of p-type doped Gallium Nitride GaN, disposed above the substrate;

the layer of a semiconductor material disposed on the p-type doped Gallium Nitride GaN layer;

making a mask above the plurality of stacks, said mask masking each active stack;

ion implantation to introduce oxygen atoms into the two zones of each active stack located on either side of the masked zone so as to obtain two oxygen-implanted side zones in the p-type doped Gallium Nitride GaN layer;

annealing following ion implantation,

wherein a dose of oxygen atoms implanted is:

greater than 2·10 14 cm −2 ×(Wa/Wo) where Wa denotes a width of the active stack and Wo denotes a width of the implanted side zones and;

less than 6·10 15 cm −2 ×(Wa/Wo),

the width being measured parallel to the plane of the layers in line with each active stack and the oxygen-implanted zones.

15 . The method according to claim 14 , wherein an annealing temperature is between 70° and 850° C.

16 . The method according to claim 14 , wherein the implantation is a multi-energy implantation.

17 . The method according to claim 14 , wherein an energy of the ionised oxygen atoms used for implantation is less than or equal to 200 keV.

18 . The method according to claim 14 , wherein the ion implantation step for introducing oxygen atoms is accompanied with an ion implantation step for introducing argon or nitrogen atoms.