VTFET with buried power rails
A semiconductor device is provided. The semiconductor device includes a buried power rail, a buried oxide (BOX) layer formed on the buried power rail, a plurality of channel fins formed on the BOX layer, a bottom epitaxial layer formed on the BOX layer and between the channel fins such that the BOX layer is between the buried power rail and the bottom epitaxial layer, a gate stack formed over the bottom epitaxial layer and contacting the channel fins, the gate stack including a work function metal (WFM) layer and a high-x layer, and a top epitaxial layer formed on the gate stack. In the semiconductor device, between two adjacent ones of the channel fins the BOX layer has an opening so that the bottom epitaxial layer is electrically connected to the buried power rail.
1 . A method of manufacturing a semiconductor device, the method comprising:
forming a buried oxide (BOX) layer;
forming a plurality of channel fins on the BOX layer;
forming a bottom epitaxial layer on the BOX layer and between the channel fins;
forming a gate stack over the bottom epitaxial layer and contacting the channel fins, the gate stack including a work function metal (WFM) layer and a high-κ layer;
forming a top epitaxial layer on the gate stack; and
forming a buried power rail on the BOX layer, wherein the BOX layer is between the buried power rail and the bottom epitaxial layer, and
wherein between two adjacent ones of the channel fins the BOX layer has an opening so that the bottom epitaxial layer is electrically connected to the buried power rail.
2 . The method of claim 1 , further comprising forming a third channel fin that is electrically isolated from the buried power rail by the BOX layer.
3 . The method of claim 1 , further comprising forming a bottom spacer layer between the bottom epitaxial layer and the gate stack, and forming a top spacer layer between the gate stack and the top epitaxial layer.
4 . The method of claim 3 , wherein the bottom spacer and the top spacer are formed of at least one dielectric material selected from the group consisting of SiO 2 , SiN, silicon carbide oxide (SiCO), and silicon boron carbide nitride (SiBCN).
5 . The method of claim 1 , further comprising forming a silicide layer between the buried power rail and the bottom epitaxial layer.
6 . The method of claim 1 , further comprising forming shallow trench isolation (STI) regions in the first epitaxial layer.
7 . The method of claim 6 , wherein the STI regions are formed in such a manner as to create a two fin device that is separated from other fins.
8 . The method of claim 1 , wherein the high-K layer of the gate stack includes at least one material selected from the group consisting of hafnium oxide (HfO 2 ), hafnium silicon oxide (Hf-Si-O), hafnium silicon oxynitride (HfSiON), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), zirconium oxide (ZrO 2 ), zirconium silicon oxide, zirconium silicon oxynitride, tantalum oxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide (Y 2 O 3 ), aluminum oxide (Al 2 O 3 ), lead scandium tantalum oxide, and lead zinc niobate.
9 . The method of claim 1 , further comprising forming an interlayer dielectric layer between portions of the gate stack.
10 . The method of claim 1 , wherein a first portion of the bottom epitaxial layer corresponds to a pFET and a second portion of the bottom epitaxial layer corresponds to an nFET.