Semiconductor device including amorphous oxide semiconductor channel layer
A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of the channel layer, a first conductive electrode connected to a first side surface of the channel layer, and a second conductive electrode connected to a second side surface of the channel layer.
1 . A semiconductor device, comprising:
a substrate;
a gate electrode on the substrate;
a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of the channel layer;
a first conductive electrode on the substrate, including a source region contacting a first side surface of the channel layer and a first conductive via extending from the source region; and
a second conductive electrode on the substrate, including a drain region contacting a second side surface of the channel layer and a second conductive via extending from the drain region,
wherein the source region and the first conductive via are of a single body, and
wherein the drain region and the second conductive via are of a single body.
2 . The semiconductor device as claimed in claim 1 , wherein:
a width of the source region is greater than a width of the first conductive via, and
a width of the drain region is greater than a width of the second conductive via.
3 . The semiconductor device as claimed in claim 1 , wherein the channel layer has a cross section having a rectangular shape.
4 . The semiconductor device as claimed in claim 1 , wherein:
the first side surface of the channel layer is vertically aligned with a first side surface of the gate electrode, and
the second side surface of the channel layer is spaced apart from a second side surface of the gate electrode toward the first side surface of the gate electrode, the second side surface of the gate electrode being opposite the first side surface of the gate electrode.
5 . The semiconductor device as claimed in claim 1 , wherein at least one of the first side surface of the channel layer and the second side surface of the channel layer overlaps with the gate electrode when viewed in plan view.
6 . The semiconductor device as claimed in claim 5 , wherein the gate electrode extends beyond the channel layer along a direction parallel to a top surface of the substrate.
7 . The semiconductor device as claimed in claim 1 , wherein the channel layer is a deposition product, the deposition product being formed by a deposition process performed at a temperature of 50 degrees Celsius to 400 degrees Celsius.
8 . The semiconductor device as claimed in claim 1 , wherein the channel layer includes at least one of indium gallium zinc oxide and indium tin zinc oxide.
9 . The semiconductor device as claimed in claim 1 , wherein each of the first conductive electrode and the second conductive electrode includes at least one of titanium, tantalum, tungsten, copper, and aluminum.
10 . The semiconductor device as claimed in claim 1 , wherein the substrate is a semiconductor substrate, a glass substrate, or a plastic substrate.
11 . A semiconductor device, comprising:
a substrate;
a gate electrode on the substrate;
a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the channel layer progressively decreasing from a bottom surface of the channel layer toward a top surface of the channel layer;
a first conductive electrode on the substrate, including a source region contacting a first side surface of the channel layer and a first conductive via extending from the source region; and
a second conductive electrode on the substrate, including a drain region contacting a second side surface of the channel layer and a second conductive via extending from the drain region,
wherein the source region and the first conductive via are of a single body,
wherein the drain region and the second conductive via are of a single body, and
wherein at least one of the first conductive electrode and the second conductive electrode extends horizontally to a position under the gate electrode to vertically overlap with the gate electrode.
12 . The semiconductor device as claimed in claim 11 , wherein a maximum width of the channel layer is less than a width of the gate electrode.
13 . The semiconductor device as claimed in claim 11 , wherein a minimum width of the channel layer is less than a width of the gate electrode.
14 . The semiconductor device as claimed in claim 11 , wherein each of the first conductive electrode and the second conductive electrode includes at least one of titanium, tantalum, tungsten, copper, and aluminum.
15 . The semiconductor device as claimed in claim 11 , wherein the substrate is a semiconductor substrate, a glass substrate, or a plastic substrate.
16 . A semiconductor device, comprising:
a substrate;
a first conductive electrode on the substrate, the first conductive electrode including a source region and a first conductive via;
a second conductive electrode on the substrate, the second conductive electrode including a drain region and a second conductive via;
a channel layer on the substrate, the channel layer being between the first conductive electrode and the second conductive electrode;
a gate electrode on three different surfaces of the channel layer, a width of the channel layer being less than a width of the gate electrode;
a gate oxide layer between the channel layer and the gate electrode, and between the substrate and the gate electrode; and
an insulating layer on the substrate and covering the first conductive electrode, the second conductive electrode, the channel layer, and the gate electrode, the first conductive via and the second conductive via penetrating the insulating layer.
17 . The semiconductor device as claimed in claim 16 , wherein the channel layer includes an amorphous oxide semiconductor.
18 . The semiconductor device as claimed in claim 16 , wherein the width of the channel layer becomes progressively less from a bottom surface of the channel layer toward a top surface of the channel layer.
19 . The semiconductor device as claimed in claim 16 , wherein the channel layer has a cross section having a rectangular shape.
20 . The semiconductor device as claimed in claim 16 , further comprising a bit line in the insulating layer, the bit line being electrically connected to the first conductive electrode or the second conductive electrode.