Semiconductor structure and preparation method thereof

1 . A semiconductor structure, comprising:

a substrate, comprising a first region at a center of the substrate and a second region at a periphery of the first region; and

a composite buffer layer arranged at the substrate, wherein the composite buffer layer comprises a first buffer layer, the first buffer layer comprises a carbon element, and the first buffer layer comprises at least one set of a first sub-buffer layer and a second sub-buffer layer stacked in layers;

wherein in a transverse direction parallel to a surface of the substrate, a carbon concentration of the first sub-buffer layer arranged at the first region is higher than a carbon concentration of the first sub-buffer layer arranged at the second region, and

in the transverse direction parallel to the surface of the substrate, a carbon concentration of the second sub-buffer layer arranged at the first region is lower than a carbon concentration of the second sub-buffer layer arranged at the second region.

2 . The semiconductor structure according to claim 1 , wherein the carbon concentration of the first sub-buffer layer arranged at the first region is higher than the carbon concentration of the second sub-buffer layer arranged at the first region.

3 . The semiconductor structure according to claim 1 , wherein the carbon concentration of the first sub-buffer layer arranged at the second region is lower than the carbon concentration of the second sub-buffer layer arranged at the second region.

4 . The semiconductor structure according to claim 1 , wherein a minimum repeating unit of the first buffer layer is the first sub-buffer layer and the second sub-buffer layer, and in the minimum repeating unit, the first sub-buffer layer is closer to the substrate, or the second sub-buffer layer is closer to the substrate.

5 . The semiconductor structure according to claim 1 , wherein a thickness of the first sub-buffer layer and a thickness of the second sub-buffer layer are both lower than 5 um.

6 . The semiconductor structure according to claim 1 , wherein

the composite buffer layer comprises at least one of the first buffer layer,

the composite buffer layer further comprises at least one second buffer layer, and the at least one second buffer layer and the at least one of the first buffer layer are alternately stacked on a side of the substrate, and

the second buffer layer comprises a carbon element, and an average carbon concentration of the second buffer layer is lower than or higher than an average carbon concentration of the first buffer layer.

7 . The semiconductor structure according to claim 6 , wherein

the second buffer layer comprises at least one set of a third sub-buffer layer and a fourth sub-buffer layer stacked in layers,

a carbon concentration of the third sub-buffer layer arranged at the first region is higher than a carbon concentration of the third sub-buffer layer arranged at the second region, and

a carbon concentration of the fourth sub-buffer layer arranged at the first region is lower than a carbon concentration of the fourth sub-buffer layer arranged at the second region.

8 . The semiconductor structure according to claim 1 , wherein a carbon concentration of the composite buffer layer is higher than 1E17 cm −3 and lower than 2E20 cm −3 .

9 . The semiconductor structure according to claim 1 , wherein a carbon concentration of the composite buffer layer gradually increases or firstly increases and then decreases along a direction from the substrate to the composite buffer layer.

10 . The semiconductor structure according to claim 1 , wherein the composite buffer layer further comprises an aluminum element, and a composition content of aluminum is constant or gradually decreases or firstly increases and then decreases, or is complementary to a composition content of carbon along a direction from the substrate to the composite buffer layer.

11 . The semiconductor structure according to claim 1 , wherein a shape of the first region is any one of a circle, an ellipse or a polygon.

12 . The semiconductor structure according to claim 1 , wherein an area of the first region is lower than half of an area of the substrate.

13 . The semiconductor structure according to claim 1 , further comprising a transition layer arranged between the substrate and the composite buffer layer.

14 . The semiconductor structure according to claim 1 , further comprising a barrier layer arranged at a side of the composite buffer layer away from the substrate, wherein a carbon concentration of the barrier layer is lower than a carbon concentration of the composite buffer layer.

15 . A preparation method for a semiconductor structure, comprising:

providing a substrate, wherein the substrate comprises a first region arranged at a center of the substrate and a second region arranged at a periphery of the first region; and

preparing a composite buffer layer on the substrate, comprising:

preparing a first buffer layer, comprising: preparing at least one set of a first sub-buffer layer and a second sub-buffer layer stacked in layers; and

doping a carbon element in the first buffer layer, wherein in a transverse direction parallel to a surface of the substrate, a carbon concentration of the first sub-buffer layer arranged at the first region is higher than a carbon concentration of the first sub-buffer layer arranged at the second region, and in a transverse direction parallel to a surface of the substrate, a carbon concentration of the second sub-buffer layer at the first region is lower than a carbon concentration of the second sub-buffer layer arranged at the second region.

16 . The preparation method for a semiconductor structure according to claim 15 , wherein the preparing at least one set of a first sub-buffer layer and a second sub-buffer layer stacked in layers comprises:

preparing the first sub-buffer layer in a first condition, wherein the first condition comprises that a carbon element doping source is an organic compound.

17 . The preparation method for a semiconductor structure according to claim 15 , wherein the preparing at least one set of a first sub-buffer layer and a second sub-buffer layer stacked in layers comprises:

preparing the second sub-buffer layer in a second condition, wherein the second condition comprises that a carbon element doping source is a metal-organic compound (MO) source, and the second condition further comprises:

a temperature is lower than 1000° C., or a growth rate is greater than 2 um/h.

18 . The preparation method for a semiconductor structure according to claim 15 , wherein the preparing a composite buffer layer on the substrate further comprises:

preparing at least one of the first buffer layer and at least one second buffer layer which are alternately stacked on the substrate; and

doping a carbon element in the second buffer layer, wherein an average carbon concentration of the second buffer layer is lower than or higher than an average carbon concentration of the first buffer layer.

19 . The preparation method for a semiconductor structure according to claim 18 , wherein

the second buffer layer comprises a plurality of sets of a third sub-buffer layer and a fourth sub-buffer layer stacked in layers;

a carbon concentration of the third sub-buffer layer arranged at the first region is higher than a carbon concentration of the third sub-buffer layer arranged at the second region; and

a carbon concentration of the fourth sub-buffer layer arranged at the first region is lower than a carbon concentration of the fourth sub-buffer layer arranged at the second region.

20 . The preparation method for a semiconductor structure according to claim 15 , after the preparing a composite buffer layer on the substrate, further comprising:

preparing a barrier layer on a side of the composite buffer layer away from the substrate, wherein a carbon concentration of the barrier layer is lower than a carbon concentration of the composite buffer layer.