Semiconductor device including source/drain pattern having high concentration impurity region and method for fabricating the same
A semiconductor device includes an active pattern that extends in a first direction; a plurality of gate structures that are spaced apart in the first direction, and include a gate electrode that extends in a second direction; a source/drain recess between adjacent gate structures; a source/drain pattern in the source/drain recess; a source/drain contact connected to the source/drain pattern and that includes a lower part on the source/drain pattern and an upper par; and a contact silicide film disposed along the lower part of the source/drain contact and between the source/drain contact and the source/drain region. The source/drain pattern includes a semiconductor liner film that extends along the source/drain recess and includes silicon germanium, a semiconductor filling film on the semiconductor liner film and that includes silicon germanium, and a semiconductor insertion film that extends along side walls of the lower part of the source/drain contact and includes silicon germanium.
1 . A semiconductor device, comprising:
an active pattern that extends in a first direction;
a plurality of gate structures disposed on the active pattern in a stacking direction and that are spaced apart in the first direction and include a gate electrode that extends in a second direction that crosses the first direction;
a source/drain recess formed between adjacent gate structures;
a source/drain pattern disposed in the source/drain recess on the active pattern;
a source/drain contact connected to the source/drain pattern, wherein the source/drain contact includes a lower part and an upper part, wherein the lower part of the source/drain contact is disposed in the source/drain pattern; and
a contact silicide film disposed along a profile of the lower part of the source/drain contact and between the source/drain contact and the source/drain pattern,
wherein the source/drain pattern includes:
a semiconductor liner film that extends along the source/drain recess and includes silicon germanium,
a semiconductor filling film disposed on the semiconductor liner film and that includes silicon germanium, and
a semiconductor insertion film that extends along side walls of the lower part of the source/drain contact and includes silicon germanium, and
wherein at least a portion of the contact silicide film is arranged between a side surface of the source/drain contact and the source/drain pattern in a direction perpendicular to the stacking direction, and the at least a portion of the contact silicide film conformally extends along the side surface of the source/drain contact facing the source/drain pattern.
2 . The semiconductor device of claim 1 , wherein a germanium fraction of the semiconductor filling film differs from a germanium fraction of the semiconductor liner film and a germanium fraction of the semiconductor insertion film.
3 . The semiconductor device of claim 1 , wherein the semiconductor filling film and the semiconductor insertion film each include p-type impurities, and
a concentration of p-type impurities of the semiconductor insertion film is greater than a concentration of p-type impurities of the semiconductor filling film.
4 . The semiconductor device of claim 1 , wherein the contact silicide film is not in contact with the semiconductor filling film.
5 . The semiconductor device of claim 4 , wherein the semiconductor insertion film extends along a bottom surface of the lower part of the source/drain contact.
6 . The semiconductor device of claim 1 , wherein the contact silicide film is in contact with the semiconductor filling film.
7 . The semiconductor device of claim 6 , wherein the semiconductor insertion film is not disposed along a bottom surface of the lower part of the source/drain contact.
8 . The semiconductor device of claim 1 , wherein the semiconductor insertion film is in contact with the semiconductor liner film.
9 . The semiconductor device of claim 1 , wherein a part of the semiconductor filling film extends along side walls of the source/drain recess to an upper surface of the active pattern.
10 . The semiconductor device of claim 1 , wherein an upper surface of the source/drain contact is coplanar with an upper surface of the plurality of gate structures.
11 . The semiconductor device of claim 1 , wherein an upper surface of the source/drain contact is lower than an upper surface of the plurality of gate structures.
12 . The semiconductor device of claim 1 , wherein the active pattern includes a lower pattern, and a plurality of sheet patterns that are spaced apart from the lower pattern in a third direction perpendicular to the first direction and the second direction, and
the gate electrode surrounds the plurality of sheet patterns.
13 . A semiconductor device, comprising:
an active pattern that includes a lower pattern that extends in a first direction, and a sheet pattern spaced apart from the lower pattern in a second direction that crosses the first direction;
a plurality of gate structures that include gate electrodes that are spaced apart from each other in the first direction on the active pattern in a stacking direction and surround the sheet pattern, wherein the gate electrodes extend in a third direction that is normal to a plane defined by the first direction and the second direction;
a source/drain pattern disposed on the lower pattern, wherein the source/drain pattern is connected to the sheet pattern and includes a contact recess;
a contact silicide that extends along a profile of the contact recess; and
a source/drain contact disposed on the contact silicide and that fills the contact recess,
wherein the source/drain pattern includes:
a semiconductor liner film that includes silicon germanium and is disposed on the lower pattern,
a semiconductor filling film that includes silicon germanium and is disposed on the semiconductor liner film, and
a semiconductor insertion film that includes silicon germanium and is disposed on the semiconductor filling film,
wherein a germanium fraction of the semiconductor filling film differs from a germanium fraction of the semiconductor liner film and a germanium fraction of the semiconductor insertion film,
wherein at least a part of the contact recess is defined by the semiconductor insertion film, and
wherein at least a portion of the contact silicide is arranged between a side surface of the source/drain contact and the source/drain pattern in a direction perpendicular to the stacking direction, and the at least a portion of the contact silicide conformally extends along the side surface of the source/drain contact facing the source/drain pattern.
14 . The semiconductor device of claim 13 , wherein the semiconductor filling film and the semiconductor insertion film each include p-type impurities, and
a concentration of the p-type impurities of the semiconductor insertion film is greater than a concentration of the p-type impurities of the semiconductor filling film.
15 . The semiconductor device of claim 13 , wherein the contact recess is entirely defined by the semiconductor insertion film.
16 . The semiconductor device of claim 13 , wherein the contact recess is defined by the semiconductor insertion film and the semiconductor filling film.
17 . The semiconductor device of claim 13 , wherein the semiconductor insertion film is in contact with the semiconductor liner film.
18 . A semiconductor device, comprising:
an active pattern that includes a lower pattern and a sheet pattern disposed on the lower pattern;
a gate structure disposed on the active pattern in a stacking direction and that includes a gate electrode that surrounds the sheet pattern;
a source/drain pattern disposed on the lower pattern, is connected to the sheet pattern, and includes p-type impurities;
a source/drain contact connected to the source/drain pattern and that includes a lower part and an upper part, wherein the lower part of the source/drain contact is disposed in the source/drain pattern; and
a contact silicide film disposed along a profile of the lower part of the source/drain contact between the source/drain contact and the source/drain pattern,
wherein the source/drain pattern includes:
a silicon germanium liner film disposed on the lower pattern,
a silicon germanium filling film disposed on the silicon germanium liner film and that includes a filling film recess, and
a silicon germanium insertion film disposed on the silicon germanium filling film and that extends along at least a part of the filling film recess,
wherein a germanium fraction of the silicon germanium filling film differs from a germanium fraction of the silicon germanium liner film and a germanium fraction of the silicon germanium insertion film,
wherein a concentration of p-type impurities of the silicon germanium insertion film is greater than a concentration of p-type impurities of the silicon germanium filling film, and
wherein at least a portion of the contact silicide film is arranged between a side surface of the source/drain contact and the source/drain pattern in a direction perpendicular to the stacking direction, and the at least a portion of the contact silicide film conformally extends along the side surface of the source/drain contact facing the source/drain pattern.
19 . The semiconductor device of claim 18 , wherein the silicon germanium insertion film is entirely disposed along the filling film recess.
20 . The semiconductor device of claim 18 , wherein the contact silicide film is in contact with the silicon germanium filling film.