Dielectric layer response-based field effect transistor photodetector
View Patent ↗This disclosure relates to a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carrier transport layer is used for transporting electrons or holes, the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating dielectric is used for limiting passage of the electrons, holes or excitons. The generation of photogenerated electrons, holes or excitons in the composite dielectric layer and the movement of the photogenerated electrons, holes or excitons limited within the photoelectric response dielectric cause the equivalent permittivity of the composite dielectric layer to change, causing changes in carrier concentration and conductivity of the carrier transport layer and achieving photoelectric detection.
1 . A dielectric layer response-based field effect transistor photodetector, comprising:
a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain, wherein
the photoelectric response composite dielectric layer is formed by compounding photoelectric response dielectric and charge blocking insulating dielectric, wherein
the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes, or excitons, the charge blocking insulating dielectric is used for limiting passage of the electrons, holes, and excitons, a structure of the photoelectric response composite dielectric layer satisfies the following:
the charge blocking insulating dielectric confines the electrons, holes, and excitons within the photoelectric response dielectric, thereby preventing the electrons, holes, and excitons from leaving the photoelectric response composite dielectric layer, and further preventing the electrons, holes, and excitons from entering other components of the field effect transistor photodetector, and
the carrier transport layer is used for transporting electrons or holes, the generation of photogenerated electrons, holes, or excitons in the photoelectric response composite dielectric layer and the movement of the photogenerated electrons, holes, or excitons limited within the photoelectric response dielectric cause an equivalent permittivity of the photoelectric response composite dielectric layer to change, so as to cause a change in carrier concentration and a change in conductivity of the carrier transport layer, and photoelectric detection is achieved according to a change in current between the source and the drain before and after illumination.
2 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
the gate, the photoelectric response composite dielectric layer, and the carrier transport layer are stacked in sequence, and
the source and the drain are spaced apart on a surface of the carrier transport layer.
3 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
the gate and the dielectric layer are stacked,
the source and the drain are spaced apart on a surface of the dielectric layer, and
the carrier transport layer is disposed around the source and the drain.
4 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
a structure of the photoelectric response composite dielectric layer is:
a sandwich structure of a charge blocking insulating dielectric layer/a photoelectric response dielectric layer/a charge blocking insulating dielectric layer or a stacked structure formed by the sandwich structure.
5 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
a structure of the photoelectric response composite dielectric layer is:
a random dispersion structure of the photoelectric response dielectric clustering in the charge blocking insulating dielectric.
6 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
a structure of the photoelectric response composite dielectric layer is:
a combined structure of a sandwich structure and a random dispersion structure,
wherein the sandwich structure is a sandwich structure of a charge blocking insulating dielectric layer/a photoelectric response dielectric layer/a charge blocking insulating dielectric layer, and
the random dispersion structure is a random dispersion structure of the photoelectric response dielectric clustering in the charge blocking insulating dielectric.
7 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
the photoelectric response dielectric is selected from the group consisting of silicon, germanium, and selenium elemental semiconductor materials, gallium arsenide GaAs, lead sulfide PbS, and bromine lead cesium CsPbBr3 perovskite compound semiconductor materials, lead iodide methylamine MAPbI3 perovskite, iodine tin formamidine FASnI3 perovskite, and di-tetrabutylammonium-bis(isothiocyano)bis(2,2′-bipyridine-4,4′dicarboxy) ruthenium organic-inorganic hybrid materials, and fullerene and its derivatives, poly-3-hexylthiophene, anthracene, and triphenylamine organic materials.
8 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
the charge blocking insulating dielectric is selected from the group consisting of silicon oxide, aluminum oxide, zirconia, polymethyl methacrylate, polystyrene, polyethylene glycol, and polyvinylpyrrolidone.
9 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
the carrier transport layer is selected from the group consisting of silicon, gallium arsenide, gallium nitride, zinc oxide, halide perovskite, fullerene derivatives, polytriarylamine, and Spiro-MeOTAD.
10 . The dielectric layer response-based field effect transistor photodetector according to claim 1 , wherein
each of the gate, the source, and the drain is independently selected from the group consisting of metal materials, heavily doped and highly conductive semiconductor materials, and carbon materials.
11 . The dielectric layer response-based field effect transistor photodetector according to claim 2 , wherein
the photoelectric response dielectric is selected from the group consisting of silicon, germanium, and selenium elemental semiconductor materials, gallium arsenide GaAs, lead sulfide PbS, and bromine lead cesium CsPbBr3 perovskite compound semiconductor materials, lead iodide methylamine MAPbI3 perovskite, iodine tin formamidine FASnI3 perovskite, and di-tetrabutylammonium-bis(isothiocyano)bis(2,2′-bipyridine-4,4′dicarboxy) ruthenium organic-inorganic hybrid materials, and fullerene and its derivatives, poly-3-hexylthiophene, anthracene, and triphenylamine organic materials.
12 . The dielectric layer response-based field effect transistor photodetector according to claim 2 , wherein
the charge blocking insulating dielectric is selected from the group consisting of silicon oxide, aluminum oxide, zirconia, polymethyl methacrylate, polystyrene, polyethylene glycol, and polyvinylpyrrolidone.
13 . The dielectric layer response-based field effect transistor photodetector according to claim 2 , wherein
the carrier transport layer is selected from the group consisting of silicon, gallium arsenide, gallium nitride, zinc oxide, halide perovskite, fullerene derivatives, polytriarylamine, and Spiro-MeOTAD.
14 . The dielectric layer response-based field effect transistor photodetector according to claim 2 , wherein
each of the gate, the source, and the drain is independently selected from the group consisting of metal materials, heavily doped and highly conductive semiconductor materials, and carbon materials.
15 . The dielectric layer response-based field effect transistor photodetector according to claim 3 , wherein
the photoelectric response dielectric is selected from the group consisting of silicon, germanium, and selenium elemental semiconductor materials, gallium arsenide GaAs, lead sulfide PbS, and bromine lead cesium CsPbBr3 perovskite compound semiconductor materials, lead iodide methylamine MAPbI3 perovskite, iodine tin formamidine FASnI3 perovskite, and di-tetrabutylammonium-bis(isothiocyano)bis(2,2′-bipyridine-4,4′dicarboxy) ruthenium organic-inorganic hybrid materials, and fullerene and its derivatives, poly-3-hexylthiophene, anthracene, and triphenylamine organic materials.
16 . The dielectric layer response-based field effect transistor photodetector according to claim 3 , wherein
the charge blocking insulating dielectric is selected from the group consisting of silicon oxide, aluminum oxide, zirconia, polymethyl methacrylate, polystyrene, polyethylene glycol, and polyvinylpyrrolidone.
17 . The dielectric layer response-based field effect transistor photodetector according to claim 3 , wherein
the carrier transport layer is selected from the group consisting of silicon, gallium arsenide, gallium nitride, zinc oxide, halide perovskite, fullerene derivatives, polytriarylamine, and Spiro-MeOTAD.
18 . The dielectric layer response-based field effect transistor photodetector according to claim 3 , wherein
each of the gate, the source, and the drain is independently selected from the group consisting of metal materials, heavily doped and highly conductive semiconductor materials, and carbon materials.
19 . The dielectric layer response-based field effect transistor photodetector according to claim 4 , wherein
the photoelectric response dielectric is selected from the group consisting of silicon, germanium, and selenium elemental semiconductor materials, gallium arsenide GaAs, lead sulfide PbS, and bromine lead cesium CsPbBr3 perovskite compound semiconductor materials, lead iodide methylamine MAPbI3 perovskite, iodine tin formamidine FASnI3 perovskite, and di-tetrabutylammonium-bis(isothiocyano)bis(2,2′-bipyridine-4,4′dicarboxy) ruthenium organic-inorganic hybrid materials, and fullerene and its derivatives, poly-3-hexylthiophene, anthracene, and triphenylamine organic materials.
20 . The dielectric layer response-based field effect transistor photodetector according to claim 4 , wherein
the charge blocking insulating dielectric is selected from the group consisting of silicon oxide, aluminum oxide, zirconia, polymethyl methacrylate, polystyrene, polyethylene glycol, and polyvinylpyrrolidone.