Imaging element and semiconductor element
An imaging element according to an embodiment of the present disclosure includes a first semiconductor substrate, and a second semiconductor substrate stacked over the first semiconductor substrate with an insulating layer interposed therebetween. The first semiconductor substrate includes a photoelectric conversion section, and a charge-holding section that holds charges transferred from the photoelectric conversion section. The second semiconductor substrate includes an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section. The amplification transistor includes a channel region, a source region, and a drain region in a plane intersecting a front surface of the second semiconductor substrate, and includes a gate electrode being opposed to the channel region with a gate insulating film interposed therebetween and being electrically coupled to the charge-holding section.
1 . A light detecting device, comprising:
a first substrate including a photoelectric conversion section and a charge-holding section that holds charges transferred from the photoelectric conversion section; and
a second substrate including an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section,
wherein a gate electrode of the amplification transistor is electrically coupled to the charge-holding section,
wherein the gate electrode of the amplification transistor has a first portion and a second portion,
wherein the first portion is perpendicular to the second portion, and
wherein the first substrate includes a first wiring layer, and wherein the first wiring layer includes a first wiring that contacts the charge-holding section.
2 . The light detecting device according to claim 1 , wherein the gate electrode of the amplification transistor includes a third portion, and wherein the third portion is perpendicular to the first portion and the third portion is parallel to the second portion.
3 . The light detecting device according to claim 2 , wherein the first portion is extended parallel to a surface of the second substrate, and wherein the second portion and the third portion are extended in a vertical direction from the surface of the second substrate.
4 . The light detecting device according to claim 2 , wherein a part of semiconductor region of the second substrate is disposed between the second portion and the third portion.
5 . The light detecting device according to claim 1 , wherein the first portion is extended parallel to a surface of the second substrate and the second portion is extended in a vertical direction from the surface of the second substrate.
6 . The light detecting device according to claim 1 , wherein the second substrate includes a reset transistor.
7 . The light detecting device according to claim 6 , wherein a gate electrode of the reset transistor includes has a first portion and a second portion, and wherein the first portion is perpendicular to the second portion.
8 . The light detecting device according to claim 7 , wherein the gate electrode of the reset transistor includes a third portion, and wherein the third portion is perpendicular to the first portion and the third portion is parallel to the second portion.
9 . The light detecting device according to claim 8 , wherein a part of semiconductor region of the second substrate is disposed between the second portion and the third portion.
10 . The light detecting device according to claim 8 , wherein the first portion is extended parallel to a surface of the second substrate, and wherein the second portion and the third portion are extended in a vertical direction from the surface of the second substrate.
11 . The light detecting device according to claim 1 , wherein the second substrate includes a select transistor.
12 . The light detecting device according to claim 11 , wherein a gate electrode of the select transistor includes has a first portion and a second portion, and wherein the first portion is perpendicular to the second portion.
13 . The light detecting device according to claim 12 , wherein the gate electrode of the select transistor includes a third portion, and wherein the third portion is perpendicular to the first portion and the third portion is parallel to the second portion.
14 . The light detecting device according to claim 13 , wherein a part of semiconductor region of the second substrate is disposed between the second portion and the third portion.
15 . The light detecting device according to claim 13 , wherein the first portion is extended parallel to a surface of the second substrate, and wherein the second portion and the third portion are extended in a vertical direction from the surface of the second substrate.
16 . The light detecting device according to claim 1 , wherein the gate electrode of the amplification transistor is formed by impurity-doped polysilicon, silicided silicon, or a metal material that controls a work function.
17 . The light detecting device according to claim 1 , wherein the first substrate includes a first wiring layer, and wherein the first wiring layer includes a first wiring that contacts the second portion of the gate electrode of the amplification transistor.
18 . The light detecting device according to claim 1 , wherein the second substrate includes a second wiring layer, the second wiring layer includes a second wiring which contacts the first portion of the gate electrode of the amplification transistor and a reset transistor or a select transistor.
19 . A light detecting device, comprising:
a first substrate including a photoelectric conversion section and a charge-holding section that holds charges transferred from the photoelectric conversion section; and
a second substrate including an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section,
wherein a gate electrode of the amplification transistor is electrically coupled to the charge-holding section,
wherein the gate electrode of the amplification transistor has a first portion and a second portion,
wherein the first portion is perpendicular to the second portion, and
wherein the first portion of the gate electrode of the amplification transistor contacts the charge-holding section.
20 . A light detecting device, comprising:
a first substrate including a photoelectric conversion section and a charge-holding section that holds charges transferred from the photoelectric conversion section; and
a second substrate including an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section,
wherein a gate electrode of the amplification transistor is electrically coupled to the charge-holding section,
wherein the gate electrode of the amplification transistor has a first portion and a second portion,
wherein the first portion is perpendicular to the second portion,
wherein the first substrate includes a first wiring layer, and
wherein the first wiring layer includes a first wiring that contacts the second portion of the gate electrode of the amplification transistor.