Light sensing device with dielectric element next to filter element

1 . A light sensing device, comprising:

a semiconductor substrate;

a light sensing region in the semiconductor substrate;

a filter element over the light sensing region, wherein a top view of the filter element has a curved profile;

a light shielding element over the semiconductor substrate and beside the filter element;

a dielectric element over the light shielding element and beside the filter element, wherein a top of the light shielding element and a bottom of the dielectric element have different widths, the bottom of the dielectric element is wider than a top of the dielectric element, and a bottommost surface of the dielectric element is vertically between the top of the dielectric element and a bottom of the light shielding element; and

a passivation layer surrounding the filter element, wherein the passivation layer is between the light shielding element and the filter element, and the passivation layer gradually becomes thinner along a direction from the top of the light shielding element toward the bottom of the light shielding element.

2 . The light sensing device as claimed in claim 1 , wherein the bottommost surface of the dielectric element is in direct contact with a topmost surface of the light shielding element.

3 . The light sensing device as claimed in claim 1 , further comprising:

a second dielectric element over the dielectric element and beside the filter element.

4 . The light sensing device as claimed in claim 3 , wherein a top of the dielectric element and a bottom of the second dielectric element have different widths, and the bottom of the second dielectric element is wider than a top of the second dielectric element.

5 . The light sensing device as claimed in claim 3 , wherein the second dielectric element is in direct contact with the dielectric element.

6 . The light sensing device as claimed in claim 1 , wherein the light shielding element comprises a metal material.

7 . The light sensing device as claimed in claim 1 , wherein the passivation layer has a first slanted sidewall having a first slope, the light shielding element has a second slanted sidewall having a second slope, and the first slope is different from the second slope.

8 . The light sensing device as claimed in claim 1 , wherein a first sidewall of the light shielding element has a first slope, a second sidewall of the dielectric element has a second slope, and the first slope and the second slope are different from each other.

9 . The light sensing device as claimed in claim 1 , wherein the dielectric element is thicker than the light shielding element.

10 . The light sensing device as claimed in claim 1 , further comprising:

an isolation structure beside the light sensing region, wherein a top of the isolation structure is vertically between a bottom of the isolation structure and the light shielding element, the top of the isolation structure is vertically between a top of the light sensing region and a bottom of the light sensing region, and the bottom of the isolation structure and the bottom of the light sensing region are substantially at a same height level.

11 . A light sensing device, comprising:

a semiconductor substrate;

a light sensing region in the semiconductor substrate;

a filter element over the light sensing region;

a first dielectric element beside the filter element, wherein a bottom of the first dielectric element is wider than a top of the first dielectric element;

a second dielectric element over the first dielectric element and beside the filter element, wherein the top of the first dielectric element and a bottom of the second dielectric element have different widths, the top of the first dielectric element is wider than a top of the second dielectric element, and the bottom of the second dielectric element is wider than the top of the second dielectric element;

a light reflective element between the first dielectric element and the semiconductor substrate, wherein a top of the light reflective element is wider than the bottom of the first dielectric element;

a passivation layer extending along a sidewall of the light reflective element and the top of the light reflective element, and the passivation layer gradually becomes thicker along an upward direction toward the top of the light reflective element; and

an isolation structure beside the light sensing region, wherein a top of the isolation structure is vertically between a bottom of the isolation structure and the light reflective element, and the top of the isolation structure is vertically between a top of the light sensing region and a bottom of the light sensing region.

12 . The light sensing device as claimed in claim 11 , wherein a first sidewall of the first dielectric element has a first slope, a second sidewall of the second dielectric element has a second slope, and the first slope and the second slope are different from each other.

13 . The light sensing device as claimed in claim 11 , wherein an upper portion of the filter element and a lower portion of the filter element have different widths.

14 . The light sensing device as claimed in claim 11 , wherein an entirety of the bottom of the first dielectric element is in direct contact with the light reflective element.

15 . The light sensing device as claimed in claim 11 , wherein the light reflective element extends across opposite edges of the isolation structure.

16 . A light sensing device, comprising:

a substrate;

a filter element over the substrate, wherein a top view of the filter element has a circular profile or an oval profile;

a first dielectric element beside the filter element, wherein a bottom of the first dielectric element is wider than a top of the first dielectric element;

a second dielectric element over the first dielectric element and beside the filter element, wherein a first sidewall of the first dielectric element has a first slope, a second sidewall of the second dielectric element has a second slope, a top of the second dielectric element and a bottom of the second dielectric element have different widths, and the first slope and the second slope are different from each other;

a metal element between the first dielectric element and the substrate, wherein a top of the metal element extends across opposite edges of a bottom of the first dielectric element; and

a passivation layer extending along a sidewall of the metal element and the top of the metal element, the passivation layer has a first portion beside the top of the metal element and a second portion between the first portion and the substrate, and the first portion is thicker than the second portion.

17 . The light sensing device as claimed in claim 16 , wherein a bottom of the filter element is closer to the substrate than the bottom of the first dielectric element.

18 . The light sensing device as claimed in claim 16 , wherein a third sidewall of the metal element has a third slope, and the third slope and the first slope are different from each other.

19 . The light sensing device as claimed in claim 16 ,

wherein the passivation layer further extends along the first sidewall and the second sidewall, and the passivation layer has a slanted sidewall having a third slope, and the third slope is different from the first slope and the second slope.

20 . The light sensing device as claimed in claim 16 , further comprising:

an isolation structure beside the light sensing region, wherein a top of the isolation structure is vertically between a bottom of the isolation structure and the metal element, and the top of the isolation structure is vertically between a top of the light sensing region and a bottom of the light sensing region; and

an interconnection structure extending across opposite edges of the filter element, wherein the isolation structure is positioned between the interconnection structure and the metal element.