IP Library › Granted Patent US 12677496
Granted Patent B2
US 12677496 · App. 18/632,810 · Granted Jul 7, 2026

Image sensor and method of fabricating the same

Inventors: Eun-Ji Lee (Suwon-si, KR); Hyunchul Kim (Seoul, KR); Tae-Hun Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10F39/807H10F39/014H10F39/024H10F39/18H10F39/8053H10F39/8063H10F39/811
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Quick Facts
Patent No.
US 12677496
App. No.
18/632,810
Granted
Jul 7, 2026
Kind
B2
Abstract

An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.

Claims (82)

1 . An image sensor, comprising:

a substrate comprising a first surface and a second surface opposing the first surface;

a first pixel region in the substrate;

a second pixel region in the substrate;

a first trench disposed between the first pixel region and the second pixel region;

a dielectric pattern disposed in the first trench and being in contact with the first surface;

a first pattern disposed in the first trench and comprising a bottom surface and a top surface opposing the bottom surface;

a second pattern disposed between an inner wall of the first trench and the first pattern; and

a third pattern disposed between the inner wall of the first trench and the second pattern,

wherein the first trench penetrates the substrate,

wherein a distance from the first surface of the substrate to the bottom surface of the first pattern in a first direction perpendicular to the first surface is less than a distance from the first surface of the substrate to the top surface of the first pattern in the first direction,

wherein a width of the bottom surface of the first pattern in a second direction perpendicular to the first direction in a vertical view is greater than a width of the top surface of the first pattern in the second direction in the vertical view,

wherein the first and second patterns are spaced apart from the first surface,

wherein a width of the first trench in the second direction at the first surface in the vertical view is greater than a width of the first trench at the second surface in the second direction in the vertical view,

wherein the first pattern includes a first material and the third pattern includes a second material different from the first material,

wherein the dielectric pattern vertically overlaps with the first pattern in the first direction,

wherein a width of the second pattern in the second direction at the second surface in the vertical view is different from a width of the third pattern at the second surface in the second direction in the vertical view,

wherein the second pattern comprises a bottom surface and a top surface opposing the bottom surface,

wherein the bottom surface of the second pattern is spaced apart from the second surface,

wherein the bottom surface of the second pattern is uneven, and

wherein the image sensor is configured to receive light from the second surface.

2 . The image sensor of claim 1 , further comprising:

a P-type impurities region extending along a lateral surface of the first trench.

3 . The image sensor of claim 1 , wherein the distance from the bottom surface of the first pattern to the first surface of the substrate in the first direction is different from a distance from the bottom surface of the second pattern to the first surface of the substrate in the first direction.

4 . The image sensor of claim 3 , wherein first pixel region comprises a transfer gate, and

a portion of the transfer gate extends into the substrate from the first surface of the substrate.

5 . The image sensor of claim 3 , further comprising:

an optical black region; and

a second trench in the optical black region,

wherein the second trench penetrates the substrate.

6 . The image sensor of claim 5 , wherein a width of the second trench at the first surface in the second direction in the vertical view is greater than a width of the second trench at the second surface in the second direction in the vertical view.

7 . An image sensor, comprising:

a substrate comprising a first surface and a second surface opposing the first surface;

a first pixel region in the substrate;

a second pixel region in the substrate;

a first trench disposed between the first pixel region and the second pixel region;

a dielectric pattern disposed in the first trench and being in contact with the first surface;

a first pattern disposed in the first trench and comprising a bottom surface and a top surface opposing the bottom surface;

a second pattern disposed between an inner wall of the first trench and the first pattern; and

a third pattern disposed between the inner wall of the first trench and the second pattern,

wherein the first trench penetrates the substrate,

wherein a distance from the first surface of the substrate to the bottom surface of the first pattern in a first direction perpendicular to the first surface is less than a distance from the first surface of the substrate to the top surface of the first pattern in the first direction,

wherein a width of the bottom surface of the first pattern in a second direction perpendicular to the first direction in a vertical view is greater than a width of the top surface of the first pattern in the second direction in the vertical view,

wherein the first and second patterns are spaced apart from the first surface,

wherein a width of the first trench at the first surface in the second direction in the vertical view is greater than a width of the first trench at the bottom surface of the first pattern in the second direction in the vertical view,

wherein the width of the first trench at the bottom surface of the first pattern in the second direction in the vertical view is greater than a width of the first trench at the second surface in the second direction in the vertical view,

wherein the first pattern includes a first material and the third pattern includes a second material different from the first material, and

wherein the image sensor is configured to receive light from the second surface.

8 . The image sensor of claim 7 , wherein the second pattern comprises a bottom surface and a top surface opposing the bottom surface,

wherein the bottom surface of the second pattern is spaced apart from the second surface of the substrate, and

wherein the bottom surface of the second pattern is an uneven shape.

9 . The image sensor of claim 8 , wherein the uneven shape is a curved shape.

10 . The image sensor of claim 8 , further comprising:

a doped region extending along a lateral surface of the first trench.

11 . The image sensor of claim 9 , wherein the first pattern includes a curved shape along the curved shape of the second pattern.

12 . The image sensor of claim 8 , wherein the dielectric pattern vertically overlaps with the first pattern in the first direction.

13 . The image sensor of claim 8 , wherein the second pattern comprises a first side and a second side opposing the first side in the vertical view,

wherein the second side extends from an inside of the first trench toward the inner wall of the first trench, and

wherein the second side includes an inclined portion.

14 . The image sensor of claim 8 , wherein the distance from the bottom surface of the first pattern to the first surface of the substrate in the first direction is different from a distance from the bottom surface of the second pattern to the first surface of the substrate in the first direction.

15 . The image sensor of claim 14 , further comprising:

an optical black region; and

a second trench in the optical black region,

wherein the second trench penetrates the substrate.

16 . An image sensor, comprising:

a substrate comprising a first surface and a second surface opposing the first surface;

a first pixel region in the substrate;

a second pixel region in the substrate;

a first trench disposed between the first pixel region and the second pixel region;

a dielectric pattern disposed in the first trench and being in contact with the first surface;

a first pattern disposed in the first trench and comprising a bottom surface and a top surface opposing the bottom surface;

a second pattern disposed between an inner wall of the first trench and the first pattern; and

a third pattern disposed between the inner wall of the first trench and the second pattern,

wherein the first trench penetrates the substrate,

wherein a distance from the first surface of the substrate to the bottom surface of the first pattern in a first direction perpendicular to the first surface is less than a distance from the first surface of the substrate to the top surface of the first pattern in the first direction,

wherein a width of the bottom surface of the first pattern in a second direction perpendicular to the first direction in a vertical view is greater than a width of the top surface of the first pattern in the second direction in the vertical view,

wherein the first and second patterns are spaced apart from the first surface, wherein a width of the first trench at the first surface of the substrate in the second direction in the vertical view is greater than a width of the first trench at the second surface of the substrate in the second direction in the vertical view,

wherein the second pattern comprises a bottom surface and a top surface opposing the bottom surface,

wherein the bottom surface of the second pattern is spaced apart from the second surface of the substrate,

wherein the bottom surface of the second pattern includes a curved shape,

wherein the first pattern includes a curved shape along the curved shape of the second pattern, and

wherein the image sensor is configured to receive light from the second surface.