Semiconductor device
There is provided a semiconductor device having a configuration suitable for higher integration. The semiconductor device includes: a first substrate having a first front surface; and a second substrate having a second front surface joined to the first front surface. The first substrate includes a first wiring layer including a first wiring line, and a first semiconductor layer that are stacked in order from a position close to the second substrate, and the second substrate includes a storage element layer including a storage element, and a second semiconductor layer that are stacked in order from a position close to the first substrate.
1 . A semiconductor device, comprising:
a first substrate having a first front surface; and
a second substrate having a second front surface joined to the first front surface,
wherein the first substrate includes:
a first wiring layer and a first semiconductor layer that are stacked in order from a position close to the second substrate,
wherein the first wiring layer includes a first wiring line,
wherein the second substrate includes:
a storage element layer and a second semiconductor layer that are stacked in order from a position close to the first substrate,
wherein the storage element layer includes a storage element;
a transistor;
a first contact layer in contact with the storage element;
a second contact layer that couples the storage element and the second substrate to each other;
a protective film covering an end surface of the storage element; and
a hydrogen block layer covering at least a portion of an outer surface of the protective film,
wherein the storage element is sandwiched between the first contact layer and the second contact layer in a stacking direction of the first substrate and the second substrate.
2 . The semiconductor device according to claim 1 , wherein
the first substrate includes a first electrode that is exposed to the first front surface, and
the second substrate includes a second electrode that is exposed to the first front surface and is joined to the first electrode.
3 . The semiconductor device according to claim 1 , wherein the second substrate further includes a second wiring layer located on a side opposite to the second semiconductor layer as viewed from the storage element layer, the second wiring layer including a second wiring line.
4 . The semiconductor device according to claim 1 , wherein the second substrate further includes:
a first terminal provided between the first contact layer and the storage element; and
a second terminal provided between the second contact layer and the storage element,
wherein a thickness of the second terminal is larger than a thickness of the first terminal.
5 . The semiconductor device according to claim 4 , wherein the second terminal includes titanium.
6 . The semiconductor device according to claim 4 , wherein a dimension in an in-plane direction of the second terminal is larger than a dimension in the in-plane direction of the storage element.
7 . The semiconductor device according to claim 1 , wherein the hydrogen block layer includes titanium.
8 . The semiconductor device according to claim 7 , wherein the second contact layer is covered with a titanium-containing layer coupled to the hydrogen block layer.
9 . The semiconductor device according to claim 1 , wherein the first substrate further includes an imaging element provided on a side opposite to the first wiring layer as viewed from the first semiconductor layer.
10 . The semiconductor device according to claim 9 , wherein
the first substrate includes a first electrode that is exposed to the first front surface, and
the second substrate includes a second electrode that is exposed to the first front surface and is joined to the first electrode.
11 . The semiconductor device according to claim 10 , wherein
the first substrate includes a pixel region in which a plurality of the imaging elements is arranged, and a peripheral region surrounding the pixel region, and
a joint section between the first electrode and the second electrode is formed at a position overlapping the pixel region in a stacking direction of the first substrate and the second substrate.
12 . The semiconductor device according to claim 1 , further comprising a third substrate that is provided on a side opposite to the first substrate as viewed from the second substrate, and has a third front surface joined to a second rear surface on a side opposite to the second front surface in the second substrate.
13 . The semiconductor device according to claim 1 , further comprising a third substrate that is provided on a side opposite to the second substrate as viewed from the first substrate, and has a third front surface joined to a first rear surface on a side opposite to the first front surface in the first substrate.
14 . The semiconductor device according to claim 1 , wherein the second substrate further includes a hydrogen block layer between the storage element and the second front surface.
15 . An electronic apparatus, comprising:
an optical system;
a semiconductor device that receives light from the optical system, the semiconductor device including:
a first substrate having a first front surface; and
a second substrate having a second front surface joined to the first front surface,
wherein the first substrate includes:
a first wiring layer and a first semiconductor layer that are stacked in order from a position close to the second substrate,
wherein the first wiring layer includes a first wiring line,
wherein the second substrate includes:
a storage element layer and a second semiconductor layer that are stacked in order from a position close to the first substrate,
wherein the storage element layer includes a storage element;
a transistor;
a first contact layer in contact with the storage element;
a second contact layer that couples the storage element and the second substrate to each other;
a protective film covering an end surface of the storage element; and
a hydrogen block layer covering at least a portion of an outer surface of the protective film,
wherein the storage element is sandwiched between the first contact layer and the second contact layer in a stacking direction of the first substrate and the second substrate; and
a signal processor that processes signals received from the semiconductor device.
16 . The electronic apparatus according to claim 15 , wherein the second substrate further includes a second wiring layer located on a side opposite to the second semiconductor layer as viewed from the storage element layer, the second wiring layer including a second wiring line.
17 . The electronic apparatus according to claim 15 , wherein
the first substrate includes a first electrode that is exposed to the first front surface, and
the second substrate includes a second electrode that is exposed to the first front surface and is joined to the first electrode.
18 . The electronic apparatus according to claim 15 , wherein the first substrate further includes an imaging element provided on a side opposite to the first wiring layer as viewed from the first semiconductor layer.
19 . The electronic apparatus according to claim 15 , further comprising a third substrate that is provided on a side opposite to the first substrate as viewed from the second substrate, and has a third front surface joined to a second rear surface on a side opposite to the second front surface in the second substrate.
20 . The electronic apparatus according to claim 15 , further comprising a third substrate that is provided on a side opposite to the second substrate as viewed from the first substrate, and has a third front surface joined to a first rear surface on a side opposite to the first front surface in the first substrate.