Sensor device and distance measurement device
Provided is a sensor device that includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed. Each of the first wire, the second wire, and the third wire is formed by bonding a first portion of the first wire formation layer and extending in a first direction and a second portion of the second wire formation layer and extending in the first direction.
1 . A sensor device, comprising:
a first chip including a first semiconductor substrate and a first wire formation layer, wherein the first wire formation layer includes a first portion;
a pixel array on the first chip, wherein
the pixel array includes a plurality of pixels in a column direction of the pixel array,
each pixel of the plurality of pixels includes;
a photoelectric conversion element,
a first transfer gate element, and
a second transfer gate element, and
each of the first transfer gate element and the second transfer gate element is configured to transfer accumulated charges of the photoelectric conversion element; and
a second chip including a second semiconductor substrate and a second wire formation layer, wherein
the second wire formation layer includes a second portion,
the first portion of the first wire formation layer is bonded to the second portion of the second wire formation layer,
the first portion and the second portion correspond to each of a first wire, a second wire, and a third wire,
the first wire is electrically connected to the first transfer gate element of each pixel of the plurality of pixels,
the second wire is electrically connected to the second transfer gate element of each pixel of the plurality of pixels,
the third wire is electrically connected to a ground associated with the first semiconductor substrate,
each of the first wire, the second wire, and the third wire extends in the column direction of the pixel array, and
in the column direction of the pixel array, the third wire passes through each pixel of the plurality of pixels.
2 . The sensor device according to claim 1 , wherein the sensor device is a distance measurement sensor by an indirect time-of-flight (ToF) method.
3 . The sensor device according to claim 1 , wherein the first portion is connected to the second portion by a copper-copper (Cu—Cu) connection.
4 . The sensor device according to claim 1 , wherein the first wire and the second wire are in a symmetrical arrangement, with the photoelectric conversion element between the first wire and the second wire.
5 . The sensor device according to claim 1 , wherein a wire width of the first wire, a wire width of the second wire, and a wire width of the third wire are substantially same.
6 . The sensor device according to claim 1 , wherein a cross-sectional area of the first wire, a cross-sectional area of the second wire, and a cross-sectional area of the third wire are substantially same.
7 . The sensor device according to claim 1 , wherein, in a direction orthogonal to a stacking direction of the first chip and the second chip, at least a part of the first wire overlaps the first transfer gate element of each pixel of the plurality of pixels, and at least a part of the second wire overlaps the second transfer gate element of each pixel of the plurality of pixels.
8 . The sensor device according to claim 7 , further comprising a connection portion, wherein
the first wire is connected to the first transfer gate element of each pixel of the plurality of pixels via the connection portion,
the second wire is connected to the second transfer gate element of each pixel of the plurality of pixels via the connection portion,
the connection portion includes one of a via or a plurality of vias, and
the one of the via or the plurality of vias linearly extends in the stacking direction.
9 . The sensor device according to claim 1 , further comprising a fourth wire electrically connected to the ground, wherein
the third wire is adjacent to the first wire,
the fourth wire is adjacent to the second wire,
an interval between the first wire and the third wire and an interval between the second wire and the fourth are substantially equal.
10 . The sensor device according to claim 1 , wherein
the first wire formation layer includes a wire layer and an intermediate wire layer different from the wire layer,
the wire layer includes a plurality of first portions,
the plurality of first portions includes the first portion corresponding to each of the first wire, the second wire, and the third wire,
at least a part of the third wire overlaps each pixel of the plurality of pixels in a direction orthogonal to a stacking direction of the first chip and the second chip,
the intermediate wire layer includes an intermediate ground wire, and
in each pixel of the plurality of pixels, the third wire is connected to the ground via the intermediate ground wire.
11 . A distance measurement device, comprising:
a light emitting unit configured to emit irradiation light to an object; and
a sensor unit configured to receive reflected light of the irradiation light from the object, wherein the sensor unit includes:
a first chip including a first semiconductor substrate and a first wire formation layer, wherein the first wire formation layer includes a first portion;
a pixel array on the first chip, wherein
the pixel array includes a plurality of pixels in a column direction of the pixel array,
each pixel of the plurality of pixels includes:
a photoelectric conversion element,
a first transfer gate element, and
a second transfer gate element, and
each of the first transfer gate element and the second transfer gate element is configured to transfer accumulated charges of the photoelectric conversion element; and
a second chip including a second semiconductor substrate and a second wire formation layer, wherein
the second wire formation layer includes a second portion,
the first portion of the first wire formation layer is bonded to the second portion of the second wire formation layer,
the first portion and the second portion correspond to each of a first wire, a second wire, and a third wire,
the first wire is electrically connected to the first transfer gate element of each pixel of the plurality of pixels,
the second wire is electrically connected to the second transfer gate element of each pixel of the plurality of pixels,
the third wire is electrically connected to a ground associated with the first semiconductor substrate,
each of the first wire, the second wire, and the third wire extends in the column direction of the pixel array, and
in the column direction of the pixel array, the third wire passes through each pixel of the plurality of pixels.