Silicon solar cell and module
The present application relates to a silicon solar cell. In one example, a silicon solar cell includes a silicon substrate including an antimony element; and a carrier separation layer, formed on the silicon substrate. At least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer. The antimony-containing layer includes the antimony element. A peak concentration of the antimony element in the antimony-containing layer is a 1 , and a 1 is equal to or greater than 1E13 atoms/cm 3 .
1 . A silicon solar cell, comprising:
a silicon substrate comprising an antimony element; and
a carrier separation layer formed on the silicon substrate,
wherein at least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer, wherein the antimony-containing layer comprising the antimony element,
wherein a concentration of the antimony element in the antimony-containing layer of the carrier separation layer decreases in a direction from the side close to the silicon substrate to a side facing away from the silicon substrate,
wherein a peak concentration of the antimony element in the antimony-containing layer is a 1 , a 1 being equal to or greater than 1E13 atoms/cm 3 ,
wherein the carrier separation layer is selected from a doped semiconductor layer, a molybdenum oxide layer, or a PEDOT:PSS layer, and
wherein when the carrier separation layer is the doped semiconductor layer, the silicon solar cell comprises an interface passivation layer between the silicon substrate and the carrier separation layer.
2 . The silicon solar cell according to claim 1 , wherein:
a concentration of the antimony element in the silicon substrate is a, a ranging from 1E13 to 1E18 atoms/cm 3 ; or
a thickness d 1 of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the antimony-containing layer is 2 nm or higher.
3 . The silicon solar cell according to claim 2 , wherein alar is defined as u, u ranging from 0.8 to 1E10.
4 . The silicon solar cell according to claim 2 , wherein:
at least some regions of the silicon substrate on a side close to the interface passivation layer have a B x element, to form a B x -containing layer; and
a thickness d 2 of a region in which a concentration of the B x element is greater than 1E17 atoms/cm 3 in the B x -containing layer is 20 nm or higher.
5 . The silicon solar cell according to claim 4 , wherein:
the doped semiconductor layer comprises the B x element, a concentration of the B x element in the doped semiconductor layer being b, and b ranging from 1E18 to 5E22 atoms/cm 3 ;
a peak concentration of the B x element in the B x -containing layer is b; and
b/b 1 is defined as v, v ranging from 0.5 to 1E10.
6 . The silicon solar cell according to claim 5 , wherein:
b 1 /a 1 is defined as w, w>1.
7 . The silicon solar cell according to claim 6 , wherein:
the B x element is an element selected from Group-VA or Group-VIA,
the thickness d 1 of the region in which the concentration of the antimony element being equal to or greater than 1E13 atoms/cm 3 in the antimony-containing layer is 2 nm or higher.
8 . The silicon solar cell according to claim 7 , wherein:
a concentration of the B x element in the doped semiconductor layer ranges from 1E19 to 5E22 atoms/cm 3 .
9 . The silicon solar cell according to claim 6 , wherein:
when the B x element is an element selected from Group-IIIA, and
the thickness d 1 of the region in which the concentration of the antimony element is greater than 1E13 atoms/cm 3 in the antimony-containing layer is 3 nm or higher.
10 . The silicon solar cell according to claim 9 , wherein:
a concentration of the B x element in the doped semiconductor layer ranges from 1E18 to 5E21 atoms/cm 3 .
11 . The silicon solar cell according to claim 4 , wherein:
d 2 /d 1 is defined as x, x being greater than or equal to 1.
12 . The silicon solar cell according to claim 1 , wherein
a material of the interface passivation comprises at least one of silicon oxide, aluminum oxide, silicon nitride, molybdenum oxide, or intrinsic amorphous silicon.
13 . The silicon solar cell according to claim 1 , wherein:
the doped semiconductor layer is a p-type doped semiconductor layer, and an n-type doped semiconductor layer is formed on a side of the silicon substrate close to the p-type doped semiconductor layer, a thickness d 1p of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the antimony-containing layer is 3 nm or higher; or
the doped semiconductor layer is an n-type doped semiconductor layer, and a p-type doped semiconductor layer is formed on a side of the silicon substrate close to the n-type doped semiconductor layer, a thickness d 1n of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the antimony-containing layer is 2 nm or higher.
14 . The silicon solar cell according to claim 1 , wherein:
the interface passivation layer comprises a first interface passivation layer and a second interface passivation layer, the first interface passivation layer and the second interface passivation layer being respectively formed on two sides of the silicon substrate;
the doped semiconductor layer comprises a first doped semiconductor layer and a second doped semiconductor layer, the first doped semiconductor layer and the second doped semiconductor layer being respectively formed on a side of the first interface passivation layer away from the silicon substrate and a side of the second interface passivation layer away from the silicon substrate, the first doped semiconductor layer being doped with a Group-IIIA element, and the second doped semiconductor layer being doped with a Group-VA element or a Group-VIA element;
an area of the first doped semiconductor layer is less than or greater than an area of the second doped semiconductor layer;
at least some regions of the first doped semiconductor layer on a side close to the first interface passivation layer have a first antimony-containing layer, the first antimony-containing layer comprising the antimony element; and at least some regions of the second doped semiconductor layer on a side close to the second interface passivation layer have a second antimony-containing layer, the second antimony-containing layer comprising the antimony element;
a peak concentration of the antimony element in the first antimony-containing layer is a 1p , and a 1p is equal to or greater than 1E13 atoms/cm 3 ; and
a peak concentration of the antimony element in the second antimony-containing layer is a 1n , and a 1n is equal to or greater than 1E13 atoms/cm 3 .
15 . The silicon solar cell according to claim 14 , wherein:
a thickness of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the first antimony-containing layer is d 1p ; and
a thickness of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the second antimony-containing layer is d 1n , d 1p ≥d 1n .
16 . The silicon solar cell according to claim 1 , wherein:
the interface passivation layer comprises a first interface passivation layer and a second interface passivation layer, the first interface passivation layer and the second interface passivation layer are formed on a same side of the silicon substrate;
the doped semiconductor layer comprises a first doped semiconductor layer and a second doped semiconductor layer, and the first doped semiconductor layer and the second doped semiconductor layer are respectively formed on a side of the first interface passivation layer away from the silicon substrate and a side of the second interface passivation layer away from the silicon substrate;
the first doped semiconductor layer is doped with a Group-IIIA element, and the second doped semiconductor layer is doped with a Group-VA element or a Group-VIA element;
the first interface passivation layer and the first doped semiconductor layer form a p-type region, and the second interface passivation layer and the second doped semiconductor layer form an n-type region;
at least some regions of the first doped semiconductor layer on a side close to the first interface passivation layer have a first antimony-containing layer, the first antimony-containing layer comprises the antimony element, at least some regions of the second doped semiconductor layer on a side close to the second interface passivation layer have a second antimony-containing layer, and the second antimony-containing layer comprises the antimony element;
a peak concentration of the antimony element in the first antimony-containing layer is a 1p , and a 1p is equal to or greater than 1E13 atoms/cm 3 ; and
a peak concentration of the antimony element in the second antimony-containing layer is a 1n , and a 1n is equal to or greater than 1E13 atoms/cm 3 .
17 . The silicon solar cell according to claim 16 , wherein:
a thickness of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the first antimony-containing layer is d 1p ; and
a thickness of a region in which a concentration of the antimony element is equal to or greater than 1E13 atoms/cm 3 in the second antimony-containing layer is d 1n , d 1p ≥d 1n .
18 . The silicon solar cell according to claim 17 , wherein:
at least some regions of the silicon substrate on a side close to the first interface passivation layer have a B xp element, to form a B xp -containing layer;
at least some regions of the silicon substrate on a side close to the second interface passivation layer have a B xn element, to form a B xn -containing layer;
a thickness d 2p of a region in which a concentration of the B xp element is greater than 1E17 atoms/cm 3 in the B xp -containing layer is 30 nm or higher; and
a thickness d 2n of a region in which a concentration of the B xn element is greater than 1E17 atoms/cm 3 in the B xn -containing layer is 20 nm or higher.
19 . The silicon solar cell according to claim 18 , wherein:
d 2p /d 1p is greater than or equal to 1; and
d 2n /d 1n is greater than or equal to 1.
20 . A solar cell module, comprising a silicon solar cell comprising:
a silicon substrate comprising an antimony element; and
a carrier separation layer formed on the silicon substrate,
wherein at least some regions of the carrier separation layer on a side close to the silicon substrate have an antimony-containing layer, wherein the antimony-containing layer comprising the antimony element,
wherein a concentration of the antimony element in the antimony-containing layer of the carrier separation layer decreases in a direction from the side close to the silicon substrate to a side facing away from the silicon substrate,
wherein a peak concentration of the antimony element in the antimony-containing layer is a 1 , a 1 being equal to or greater than 1E13 atoms/cm 3 ,
wherein the carrier separation layer is selected from a doped semiconductor layer, a molybdenum oxide layer, or a PEDOT:PSS layer, and
wherein when the carrier separation layer is the doped semiconductor layer, the silicon solar cell comprises an interface passivation layer between the silicon substrate and the carrier separation layer.