Display device using semiconductor light-emitting element, and method for manufacturing same

1 . A display device comprising:

a board including a wiring electrode; and

a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode;

wherein each of the plurality of semiconductor light emitting diodes includes a plurality of recessed portions formed on a side surface of each light emitting diode,

wherein each of the plurality of semiconductor light emitting diodes includes:

a first conductivity type semiconductor layer;

an active layer on the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer on the active layer,

wherein the active layer is interposed between the plurality of recessed portions,

wherein each of the plurality of semiconductor light emitting diodes includes:

a first barrier layer between the first conductivity type semiconductor layer and the active layer; and

a second barrier layer between the active layer and the second conductivity type semiconductor layer,

wherein the plurality of recessed portions include:

a first recessed portion between the first conductivity type semiconductor layer and the active layer; and

a second recessed portion between the active layer and the second conductivity type semiconductor layer,

wherein inner walls of the first recessed portion include one surface of the first conductivity type semiconductor layer, one surface of the active layer, and a side surface of the first barrier layer, and

wherein the one surface of the first conductivity type semiconductor layer and the one surface of the active layer are arranged parallel to each other.

2 . The display device of claim 1 , wherein inner walls of the second recessed portion include one surface of the second conductivity type semiconductor layer, one surface of the active layer, and a side surface of the second barrier layer, and

wherein the one surface of the second conductivity type semiconductor layer and the one surface of the active layer are arranged parallel to each other.

3 . The display device of claim 1 , wherein the first and second barrier layers are formed of AlInP doped,

wherein the active layer and the first and second conductivity type semiconductor layers are formed of AlGaInP, and

wherein the first conductive type semiconductor layer and the first barrier layer are doped with a first dopant, and the second barrier layer and the second conductive type semiconductor layer are doped with a second dopant.

4 . The display device of claim 1 , wherein the active layer does not include the plurality of recessed portions.