Light-emitting element and method for manufacturing the same

1 . A light-emitting element comprising:

a first semiconductor layer including a p-type diamond;

a second semiconductor layer including a first layered nitride semiconductor formed of an n-type nitride semiconductor; and

a light emitting layer including a second layered nitride semiconductor formed of an i-type nitride semiconductor, wherein the first semiconductor layer is disposed on a first surface of the light emitting layer, and the second semiconductor layer is disposed on a second surface of the light emitting layer, and wherein:

the first layered nitride semiconductor and the second layered nitride semiconductor each include B; and

the first layered nitride semiconductor and the second layered nitride semiconductor each has a crystal structure of a 2H or 3R stack cycle.

2 . The light-emitting element according to claim 1 , wherein:

the first layered nitride semiconductor and the second layered nitride semiconductor each further include Al, Ga, or In.

3 . The light-emitting element according to claim 1 , wherein:

the first layered nitride semiconductor includes Si, O, S, or Se as a donor.

4 . The light-emitting element according to claim 1 , wherein:

a bandgap energy of the light emitting layer is equal to or smaller than a bandgap energy of the first semiconductor layer and a bandgap energy of the second semiconductor layer.

5 . The light-emitting element according to claim 1 , further comprising a substrate formed of diamond, c-BN, 3C-SiC, 4H-SiC, 6H-SiC, or Si, wherein the first semiconductor layer is disposed on the substrate.

6 . A light-emitting element manufacturing method for manufacturing a light-emitting element, the method comprising:

forming a first semiconductor layer including a p-type diamond;

forming a second semiconductor layer including a first layered nitride semiconductor formed of an n-type nitride semiconductor; and

forming a light emitting layer including a second layered nitride semiconductor formed of an i-type nitride semiconductor, wherein the first semiconductor layer is formed on a first surface of the light emitting layer, and the second semiconductor layer is formed on a second surface of the light emitting layer, wherein each of the first layered nitride semiconductor and the second layered nitride semiconductor is formed through structural phase transition from a zinc blende structure to a layered structure, wherein:

the first layered nitride semiconductor and the second layered nitride semiconductor each include B; and

the first layered nitride semiconductor and the second layered nitride semiconductor each has a crystal structure of a 2H or 3R stack cycle.

7 . The light-emitting element manufacturing method according to claim 6 , wherein:

forming the first layered nitride semiconductor, and the second layered nitride semiconductor by the structural phase transition from the zinc blende structure to the layered structure is performed by raising a temperature to 1200° C. or higher.

8 . The light-emitting element manufacturing method according to claim 7 , wherein:

forming the first layered nitride semiconductor and the second layered nitride semiconductor by the structural phase transition from the zinc blende structure to the layered structure is performed by heating in an atmosphere at a pressure of 1013250 Pa or lower.

9 . The light-emitting element manufacturing method according to claim 8 , wherein:

forming the first layered nitride semiconductor and the second layered nitride semiconductor by the structural phase transition from the zinc blende structure to the layered structure is performed by performing plasma irradiation with a gas comprising nitrogen, argon, or hydrogen, raising a temperature to 100° C. or higher and heating in an atmosphere at a pressure of 101325 Pa or lower.

10 . The light-emitting element manufacturing method according to claim 9 wherein:

forming the first layered nitride semiconductor and the second layered nitride semiconductor by the structural phase transition from the zinc blende structure to the layered structure is performed by performing plasma irradiation with a gas comprising nitrogen, argon, or hydrogen.