Integrated micro LED chip and fabrication method therefor

1 . A fabrication method of an integrated Micro LED chip, comprising:

growing an epitaxial wafer on a substrate layer, wherein the epitaxial wafer comprises an epitaxial layer in a first color;

preparing a first-color light-emitting unit of a preset shape on a side, where the epitaxial layer in the first color is grown, of the substrate layer;

depositing a patterned photomask on a side, away from the epitaxial layer in the first color, of the substrate layer;

etching the patterned photomask to obtain color conversion layer location holes corresponding to the first-color light emitting unit of the preset shape; and

not spraying color conversion fluorescent materials into part of the color conversion layer location holes and spraying color conversion fluorescent materials in the other two colors of three primary colors except the first color into the other color conversion layer location holes, such that a Micro LED chip is obtained;

wherein the depositing of a patterned photomask on a side, away from the epitaxial layer in the first color, of the substrate layer comprises:

depositing an SiO 2 —TiO 2 alternate composite film on the side, away from the epitaxial layer in the first color, of the substrate layer; and

forming a distributed Bragg reflector on the film according to the preset shape to obtain the patterned photomask;

the etching of the patterned photomask to obtain color conversion layer location holes corresponding to the first-color light emitting unit of the preset shape comprises:

etching a surface of the patterned photomask according to the shape of the first-color light-emitting unit to obtain the color conversion layer location holes, wherein the color conversion layer location holes penetrate through the photomask to reach the substrate layer;

wherein, an interior of the color conversion layer location holes is pervious to light, and an exterior of the color conversion layer location holes within the surface of the patterned photomask is non-transparent.

2 . The fabrication method of an integrated Micro LED chip according to claim 1 , wherein preparing a first-color light-emitting unit of a preset shape on a side, where the epitaxial layer in the first color is grown, of the substrate layer comprises:

sequentially growing a PN junction, a metal oxide current spreading layer, a metal current spreading layer and etching sacrificial layer, and a current injection and welding layer on the side, where the epitaxial layer in the first color is grown, of the substrate layer from an end close to the substrate layer to an end away from the substrate layer;

covering the metal current spreading layer and etching sacrificial layer by an insulating and passivating composite layer, and covering the PN junction and the metal oxide current spreading layer; and

setting a region on the insulating and passivating composite layer located above the metal current spreading layer and etching sacrificial layer, and connecting the metal current spreading layer and etching sacrificial layer with the current injection and welding layer through the region.

3 . The fabrication method of an integrated Micro LED chip according to claim 2 , wherein the PN junction sequentially comprises an N-type GaN layer, a quantum well layer and a P-type GaN layer from the end close to the substrate layer to the end away from the substrate layer.

4 . The fabrication method of an integrated Micro LED chip according to claim 1 , wherein spraying color conversion fluorescent materials in the other color conversion layer location holes comprises:

injecting the color conversion fluorescent materials in the other color conversion layer location holes through nano-inkjet.

5 . The fabrication method of an integrated Micro LED chip according to claim 1 , wherein the first color is blue.

6 . The fabrication method of an integrated Micro LED chip according to claim 5 , wherein four color conversion layer location holes are formed and are arranged in a 2*2 manner;

the step of not spraying color conversion fluorescent materials into part of the color conversion layer location holes and spraying color conversion fluorescent materials in the other two colors of three primary colors except the first color into the other color conversion layer location holes comprises:

not spraying color conversion fluorescent materials into one of the color conversion layer location holes, spraying a red conversion fluorescent material into one or two of the color conversion layer location holes, and spraying a green conversion fluorescent material in the remaining color conversion layer location holes;

wherein, the red conversion fluorescent material is mainly K 2 TiF 6 :Mn 4+ , and the green conversion fluorescent material is mainly CsPb(Br/I) 3 .

7 . The fabrication method of an integrated Micro LED chip according to claim 1 , further comprising:

controlling a light intensity of the blue light-emitting unit in different regions according to a current input by a drive module.