IP Library Granted Patent US 12677520
Granted Patent B2
US 12677520 · App. 18/161,596 · Granted Jul 7, 2026

Transistor and display device

Inventors: Jong Chan Lee (Yongin-si, KR); Jin Taek Kim (Yongin-si, KR); Hyun Kim (Yongin-si, KR); Jeong Su Park (Yongin-si, KR); Sung Jin Lee (Yongin-si, KR); Woong Hee Jeong (Yongin-si, KR); Jung Eun Hong (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H10H29/142H10D30/6723H10D30/6729H10D30/6755H10D99/00H10H20/821H10H20/84
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Quick Facts
Patent No.
US 12677520
App. No.
18/161,596
Granted
Jul 7, 2026
Kind
B2
Abstract

Provided herein may be a display device and a transistor. The display device may comprise a semiconductor pattern on a substrate and defining a hole, an insulating layer on the semiconductor pattern, and defining an opening area overlapping the hole, a gate electrode, a source electrode contacting a conductive area of the semiconductor pattern through the opening area, and a drain electrode on the insulating layer, electrodes respectively on the gate electrode, the source electrode, and the drain electrode, and spaced apart from each other, and light emitting elements between the electrodes, respectively.

Claims (25)

1 . A display device comprising:

a semiconductor pattern corresponding to a single transistor above a substrate and defining a hole;

an insulating layer on the semiconductor pattern, and defining an opening area overlapping the hole;

a gate electrode, a source electrode contacting a conductive area of the semiconductor pattern through the opening area, and a drain electrode on the insulating layer;

electrodes respectively on the gate electrode, the source electrode, and the drain electrode, and spaced apart from each other;

light emitting elements between the electrodes, respectively;

a first connection electrode on first ends of the light emitting elements; and

a second connection electrode on second ends of the light emitting elements.

2 . The display device according to claim 1 , wherein the gate electrode, the source electrode, and the drain electrode are on a same layer.

3 . The display device according to claim 1 , wherein the conductive area of the semiconductor pattern comprises a tail exposed from the source electrode.

4 . The display device according to claim 1 , wherein the source electrode comprises a first layer, and a second layer on the first layer, and

wherein the first layer comprises a tail exposed from the second layer.

5 . The display device according to claim 1 , wherein the first connection electrode and the second connection electrode are provided on a same layer.

6 . The display device according to claim 1 , further comprising a bank on the electrodes.

7 . The display device according to claim 6 , wherein the electrodes are respectively between parts of the bank.

8 . A display device comprising:

a semiconductor pattern on a substrate and defining a hole;

an insulating layer on the semiconductor pattern, and defining an opening area overlapping the hole;

a gate electrode, a source electrode contacting a conductive area of the semiconductor pattern through the opening area, and a drain electrode on the insulating layer;

electrodes respectively on the gate electrode, the source electrode, and the drain electrode, and spaced apart from each other;

light emitting elements between the electrodes, respectively;

a bottom conductive layer between the substrate and the semiconductor pattern;

a first connection electrode on first ends of the light emitting elements; and

a second connection electrode on second ends of the light emitting elements.

9 . The display device according to claim 8 , wherein the source electrode contacts the bottom conductive layer.