Method for manufacturing display apparatus

1 . A method for manufacturing a display apparatus comprising:

a first step of forming a first pixel electrode and a second pixel electrode;

a second step of depositing a light-emitting and light-receiving film over the first pixel electrode and the second pixel electrode;

a third step of depositing a first sacrificial film covering the light-emitting and light-receiving film;

a fourth step of etching the first sacrificial film and the light-emitting and light-receiving film to form a light-emitting and light-receiving layer over the first pixel electrode and a first sacrificial layer over the light-emitting and light-receiving layer and to expose the second pixel electrode;

a fifth step of depositing an EL film over the first sacrificial layer and over the second pixel electrode;

a sixth step of depositing a second sacrificial film covering the EL film;

a seventh step of etching the second sacrificial film and the EL film to form an EL layer over the second pixel electrode and a second sacrificial layer over the EL layer;

an eighth step of removing the first sacrificial layer and the second sacrificial layer so that the light-emitting and light-receiving layer and the EL layer are exposed; and

a ninth step of forming a common electrode covering the light-emitting and light-receiving layer and the EL layer,

wherein the light-emitting and light-receiving layer comprises an active layer and a first light-emitting layer,

wherein the active layer comprises a combination of an n-type semiconductor material and a p-type semiconductor material,

wherein the first light-emitting layer comprises a first light-emitting material,

wherein the EL layer comprises a second light-emitting layer,

wherein the second light-emitting layer comprises a second light-emitting material,

wherein the first pixel electrode, the light-emitting and light-receiving layer and the common electrode form a light-emitting and light-receiving device configured to emit light of a first wavelength range and to receive light of a second wavelength range,

wherein the second pixel electrode, the EL layer and the common electrode form a light-emitting device configured to emit light of the second wavelength range, and

wherein the first wavelength range is different from the second wavelength range.

2 . The method for manufacturing a display apparatus according to claim 1 ,

wherein the active layer comprises a first organic compound, and

wherein the first organic compound, the first light-emitting material and the second light-emitting material are different from each other.

3 . The method for manufacturing a display apparatus according to claim 1 , wherein the second wavelength range is included in a visible wavelength range.

4 . The method for manufacturing a display apparatus according to claim 1 , wherein the second wavelength range is included in an infrared wavelength range.

5 . The method for manufacturing a display apparatus according to claim 1 , further comprising:

a step of forming a layer covering a top surface and a side surface of the light-emitting and light-receiving layer and a top surface and a side surface of the EL layer between the eighth step and the ninth step,

wherein the layer comprises a substance with an electron-injection property.

6 . The method for manufacturing a display apparatus according to claim 1 , comprising:

a step of forming a layer covering a top surface and a side surface of the light-emitting and light-receiving layer and a top surface and a side surface of the EL layer between the eighth step and the ninth step,

wherein the layer has a stacked-layer structure of a first layer and a second layer over the first layer,

wherein the first layer comprises a substance with an electron-transport property, and

wherein the second layer comprises a substance with an electron-injection property.

7 . The method for manufacturing a display apparatus according to claim 1 , comprising:

a step of forming a layer covering a top surface and a side surface of the light-emitting and light-receiving layer and a top surface and a side surface of the EL layer between the eighth step and the ninth step,

wherein the layer comprises a substance with a hole-injection property.

8 . The method for manufacturing a display apparatus according to claim 1 , further comprising:

a step of forming a layer covering a top surface and a side surface of the light-emitting and light-receiving layer and a top surface and a side surface of the EL layer between the eighth step and the ninth step,

wherein the layer has a stacked-layer structure of a first layer and a second layer over the first layer,

wherein the first layer comprises a substance with a hole-transport property, and

wherein the second layer comprises a substance with a hole-injection property.

9 . The method for manufacturing a display apparatus according to claim 1 ,

wherein the first sacrificial film comprises one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film and an inorganic insulating film, and

wherein in the fourth step, dry etching using an etching gas containing no oxygen gas is used for etching the light-emitting and light-receiving film.

10 . The method for manufacturing a display apparatus according to claim 9 , wherein the etching gas containing no oxygen gas is one or more selected from CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , H 2 and a noble gas.