Display device comprising a metal oxide pattern and method for manufacturing the same
A display device includes insulating layers, a light-emitting element, and a pixel circuit electrically connected to the light-emitting element. The pixel circuit includes a first transistor. The first transistor includes a metal oxide semiconductor pattern including a source region, a drain region and a channel region disposed between the source region and the drain region, a first gate disposed on the metal oxide semiconductor pattern and overlapping the channel region in a plan view, and a metal oxide pattern disposed on the first gate.
1 . A display device comprising:
insulating layers;
a light-emitting element; and
a pixel circuit electrically connected to the light-emitting element, wherein
the pixel circuit comprises a first transistor, and
the first transistor comprises:
a metal oxide semiconductor pattern including a source region, a drain region and a channel region disposed between the source region and the drain region,
a first gate disposed on the metal oxide semiconductor pattern, and overlapping the channel region in a plan view, and
a metal oxide pattern disposed on the first gate, wherein
the display device further comprises a connection electrode connected to the source region and to the metal oxide pattern.
2 . The display device of claim 1 , wherein the insulating layers comprise:
a first insulating layer disposed between the channel region and the first gate;
a second insulating layer having a first portion disposed between the first gate and the metal oxide pattern, a second portion disposed on the source region, and a third portion disposed on the drain region; and
a third insulating layer disposed on the second insulating layer and the metal oxide pattern.
3 . The display device of claim 2 , wherein
the first insulating layer comprises a first silicon oxide layer,
the second insulating layer comprises a second silicon oxide layer or a first silicon oxynitride layer, and
the third insulating layer comprises a second silicon oxynitride layer and a first silicon nitride layer disposed on the second silicon oxynitride layer.
4 . The display device of claim 2 , wherein the second insulating layer covers a side surface of the first insulating layer.
5 . The display device of claim 1 , wherein the metal oxide pattern electrically contacts an upper surface of the first gate.
6 . The display device of claim 1 , wherein the pixel circuit further comprises a conductive pattern disposed on the metal oxide pattern.
7 . The display device of claim 6 , wherein
a corresponding insulating layer among the insulating layers is disposed between the first gate and the conductive pattern, and
the first gate and the conductive pattern define a capacitor.
8 . The display device of claim 1 , wherein the first transistor is configured to control a driving current of the light-emitting element based on a charged capacitance of a capacitor defined by the first gate and a conductive pattern on the metal oxide pattern.
9 . The display device of claim 1 , wherein
the pixel circuit further comprises a second transistor,
the second transistor comprises a second metal oxide semiconductor pattern, and
the second transistor is configured to supply a data voltage to a capacitor defined by the first gate and a conductive pattern on the metal oxide pattern.
10 . The display device of claim 1 , wherein an edge of the metal oxide pattern is aligned with an edge of a conductive pattern on the metal oxide pattern.
11 . The display device of claim 1 , wherein the channel region has a length of about 3 μm or less.
12 . The display device of claim 1 , wherein the first transistor further comprises a second gate electrically connected to the first gate and disposed below the metal oxide semiconductor pattern.
13 . The display device of claim 1 , wherein the metal oxide pattern comprises at least one of indium (In), tin (Sn), zinc (Zn), gallium (Ga), magnesium (Mg), hafnium (Hf), and titanium (Ti).
14 . The display device of claim 13 , wherein the metal oxide pattern comprises at least one of tin (Sn), magnesium (Mg), and hafnium (Hf).
15 . The display device of claim 1 , wherein the metal oxide pattern has a thickness in a range of about 100 Å to about 300 Å.
16 . The display device of claim 1 , wherein the connection electrode includes:
a first contact directly connected to the source region;
a second contact connected to the metal oxide pattern; and
a metal runner directly connected to an upper surface of the first contact and to an upper surface of the second contact.
17 . The display device of claim 16 , further comprising:
a first conductive pattern;
a second conductive pattern on the first conductive pattern; and
a dielectric pattern between the first conductive pattern and the second conductive pattern, wherein
the connection electrode further includes a third contact connected to the first conductive pattern, an upper surface of the third contact directly connected to the metal runner.
18 . The display device of claim 17 , further comprising:
a conformal insulating layer on the second conductive pattern and between the metal oxide pattern and the first gate; and
an interlayer insulating layer directly on an upper surface of the conformal insulating layer.
19 . The display device of claim 1 , further comprising:
a conformal insulating layer between the metal oxide pattern and the first gate,
wherein a thickness of the metal oxide pattern is thinner than a thickness of the conformal insulating layer.