IP Library Granted Patent US 12677544
Granted Patent B2
US 12677544 · App. 18/319,782 · Granted Jul 7, 2026

Display device

Inventor: Sungeun Lee (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/123
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Quick Facts
Patent No.
US 12677544
App. No.
18/319,782
Granted
Jul 7, 2026
Kind
B2
Abstract

A display device includes an active layer, a gate electrode on the active layer, a conductive layer on the gate electrode and connected to the active layer, a pixel electrode which is on the conductive layer and connected to the conductive layer, and a connection electrode which connects the conductive layer connected to the active layer, to the pixel electrode. The connection electrode which connects the conductive layer connected to the active layer, to the pixel electrode, has a tensile strength less than or equal to a tensile strength of the active layer.

Claims (36)

1 . A display device comprising:

a transistor including:

an active layer;

a gate electrode on the active layer; and

a conductive layer on the gate electrode and connected to the active layer;

a pixel electrode which is connected to the transistor; and

a connection electrode which connects the transistor to the pixel electrode and has a tensile strength less than a tensile strength of the transistor,

wherein among respective tensile strengths of the active layer, the gate electrode and the conductive layer of the transistor, the tensile strength of the connection electrode is less than or equal to the tensile strength of the active layer.

2 . The display device of claim 1 , wherein the active layer includes at least one selected from a silicon semiconductor, an oxide semiconductor and an organic semiconductor.

3 . The display device of claim 1 , wherein the connection electrode has the tensile strength of about 400 megapascals or less.

4 . The display device of claim 1 , wherein the connection electrode has an elastic modulus which is greater than or equal to an elastic modulus of the active layer.

5 . The display device of claim 4 , wherein the connection electrode has the elastic modulus of about 50 gigapascals or more.

6 . The display device of claim 1 , wherein the connection electrode has the tensile strength which is less than or equal to a tensile strength of the gate electrode.

7 . The display device of claim 1 , wherein the connection electrode has the tensile strength which is less than or equal to a tensile strength of the conductive layer.

8 . The display device of claim 1 , wherein the connection electrode includes a transparent conductive oxide.

9 . The display device of claim 8 , wherein the transparent conductive oxide includes at least one selected from indium tin oxide, indium zinc oxide, indium gallium zinc oxide, zinc oxide, aluminum zinc oxide, and indium oxide.

10 . The display device of claim 1 , further comprising a polyimide substrate,

wherein the active layer, the conductive layer, the connection electrode and the pixel electrode are in order from the substrate, along a thickness direction of the substrate.

11 . The display device of claim 1 , wherein the connection electrode is connected to the transistor at the conductive layer.

12 . The display device of claim 1 , further comprising a light emitting element including the pixel electrode,

wherein the connection electrode is connected to the light emitting element, at the pixel electrode.

13 . The display device of claim 12 , wherein the light emitting element further includes a light emitting layer and a common electrode.

14 . A display device comprising:

a transistor including:

an active layer;

a gate electrode on the active layer; and

a conductive layer on the gate electrode and connected to the active layer;

a pixel electrode which is connected to the transistor; and

a connection electrode which connects the transistor to the pixel electrode and has an elastic modulus greater than or equal to an elastic modulus of the transistor,

wherein among respective elastic modulii of the active layer, the gate electrode and the conductive layer, the elastic modulus of the connection electrode is greater than or equal to the elastic modulus of the active layer.

15 . The display device of claim 14 , wherein the active layer includes at least one selected from a silicon semiconductor, an oxide semiconductor, and an organic semiconductor.

16 . The display device of claim 14 , wherein the connection electrode has the elastic modulus of about 50 gigapascals or more.

17 . The display device of claim 14 , wherein the connection electrode has a tensile strength which is less than or equal to a tensile strength of the active layer.

18 . The display device of claim 17 , wherein the connection electrode has the tensile strength of about 400 megapascals or less.

19 . The display device of claim 14 , wherein the connection electrode has the elastic modulus which is greater than or equal to an elastic modulus of the gate electrode.

20 . The display device of claim 14 , wherein the connection electrode has the elastic modulus which is greater than or equal to an elastic modulus of the conductive layer.