Organic light emitting display device

1 . An organic light emitting display device, comprising:

a substrate on which a plurality of sub-pixels are defined;

a thin film transistor disposed on the substrate;

a passivation layer disposed to cover the thin film transistor;

a color filter layer disposed on the passivation layer;

a planarization layer disposed on the color filter layer;

an anode disposed on the planarization layer and corresponding to each of the plurality of sub-pixels;

a bank defining an emission area by covering an edge of the anode;

at least one light emitting layer disposed on the anode; and

a cathode disposed on the light emitting layer,

wherein the anode includes 15 wt % to 60 wt % of indium oxide (In x O y ) and 40 wt % to 85 wt % of molybdenum oxide (MoO z ).

2 . The organic light emitting display device of claim 1 , wherein the indium oxide (In x O y ) includes indium (III) oxide (In 2 O 3 ), and the molybdenum oxide (MoO z ) includes one of molybdenum trioxide (MoO 3 ) and molybdenum dioxide (MoO 2 ).

3 . The organic light emitting display device of claim 1 , wherein the anode further includes a dopant.

4 . The organic light emitting display device of claim 3 , wherein the dopant includes niobium oxide (Nb a O b ).

5 . The organic light emitting display device of claim 1 , wherein the light emitting layer has a refractive index of 1.6 to 1.8, and the anode has a refractive index of 2.1 to 2.3.

6 . The organic light emitting display device of claim 1 , wherein the anode has a thickness of 65 nm to 100 nm.

7 . The organic light emitting display device of claim 1 , wherein the light emitting layer includes:

a first light emitting layer disposed on the anode,

a second light emitting layer disposed on the first light emitting layer, and

a third light emitting layer disposed on the second light emitting layer.

8 . The organic light emitting display device of claim 7 , further comprising:

a first hole transport layer disposed on the anode, the first light emitting layer disposed on the first hole transport layer;

a first charge generation layer disposed on the first light emitting layer;

a second hole transport layer disposed on the first charge generation layer, the second light emitting layer disposed on the second hole transport layer;

a second charge generation layer disposed on the second light emitting layer; and

a third hole transport layer disposed on the second charge generation layer,

wherein the third light emitting layer is disposed on the third hole transport layer, and the cathode is disposed on the third light emitting layer.

9 . The organic light emitting display device of claim 8 , wherein the first hole transport layer has a thickness of 100 nm to 130 nm, the third hole transport layer has a thickness of 70 nm to 90 nm, and the anode has a thickness of 65 nm to 100 nm.

10 . The organic light emitting display device of claim 9 , wherein a thickness of the first hole transport layer is greater than a thickness of the third hole transport layer and a thickness of the anode, and the thickness of the anode is greater than or less than the thickness of the third hole transport layer.

11 . An organic light emitting display device, comprising:

a substrate on which a plurality of sub-pixels are defined;

a thin film transistor disposed on the substrate;

a passivation layer disposed to cover the thin film transistor;

a color filter layer disposed on the passivation layer;

a planarization layer disposed on the color filter layer;

an anode disposed on the planarization layer and corresponding to each of the plurality of sub-pixels;

a bank defining an emission area by covering an edge of the anode;

at least one light emitting layer disposed on the anode; and

a cathode disposed on the light emitting layer,

wherein the anode includes indium oxide (In x O y ) and molybdenum oxide (MoO z ), and

wherein the anode further includes a dopant including niobium oxide (Nb a O b ).

12 . An organic light emitting display device, comprising:

a substrate on which a plurality of sub-pixels are defined;

a thin film transistor disposed on the substrate;

a passivation layer disposed to cover the thin film transistor;

a color filter layer disposed on the passivation layer;

a planarization layer disposed on the color filter layer;

an anode disposed on the planarization layer and corresponding to each of the plurality of sub-pixels;

a bank defining an emission area by covering an edge of the anode;

at least one light emitting layer disposed on the anode; and

a cathode disposed on the light emitting layer,

wherein the anode includes indium oxide (In x O y ) and molybdenum oxide (MoO z ), and

wherein the light emitting layer has a refractive index of 1.6 to 1.8, and the anode has a refractive index of 2.1 to 2.3.

13 . The organic light emitting display device of claim 12 , wherein the indium oxide (In x O y ) includes indium (III) oxide (In 2 O 3 ), and the molybdenum oxide (MoO z ) includes one of molybdenum trioxide (MoO 3 ) and molybdenum dioxide (MoO 2 ).

14 . An organic light emitting display device, comprising:

a substrate on which a plurality of sub-pixels are defined;

a thin film transistor disposed on the substrate;

a passivation layer disposed to cover the thin film transistor;

a color filter layer disposed on the passivation layer;

a planarization layer disposed on the color filter layer;

an anode disposed on the planarization layer and corresponding to each of the plurality of sub-pixels;

a bank defining an emission area by covering an edge of the anode;

at least one light emitting layer disposed on the anode; and

a cathode disposed on the light emitting layer,

wherein the anode includes indium oxide (In x O y ) and molybdenum oxide (MoO z ),

wherein the at least one light emitting layer comprises:

a first hole transport layer disposed on the anode;

a first light emitting layer disposed on the first hole transport layer;

a first charge generation layer disposed on the first light emitting layer;

a second hole transport layer disposed on the first charge generation layer;

a second light emitting layer disposed on the second hole transport layer;

a second charge generation layer disposed on the second light emitting layer;

a third hole transport layer disposed on the second charge generation layer;

a third light emitting layer disposed on the third hole transport layer; and

a cathode disposed on the third light emitting layer, and

wherein the first hole transport layer has a thickness of 100 nm to 130 nm, the third hole transport layer has a thickness of 70 nm to 90 nm, and the anode has a thickness of 65 nm to 100 nm.

15 . The organic light emitting display device of claim 14 , wherein a thickness of the first hole transport layer is greater than a thickness of the third hole transport layer and a thickness of the anode, and the thickness of the anode is greater than or less than the thickness of the third hole transport layer.

16 . The organic light emitting display device of claim 14 , wherein the indium oxide (In x O y ) includes indium (III) oxide (In 2 O 3 ), and the molybdenum oxide (MoO z ) includes one of molybdenum trioxide (MoO 3 ) and molybdenum dioxide (MoO 2 ).

17 . The organic light emitting display device of claim 14 , wherein the anode further includes a dopant.

18 . The organic light emitting display device of claim 17 , wherein the dopant includes niobium oxide (Nb a O b ).

19 . The organic light emitting display device of claim 14 , wherein the light emitting layer has a refractive index of 1.6 to 1.8, and the anode has a refractive index of 2.1 to 2.3.

20 . The organic light emitting display device of claim 14 , wherein the anode has a thickness of 65 nm to 100 nm.