IP Library › Granted Patent US 12677571
Granted Patent B2
US 12677571 · App. 18/313,664 · Granted Jul 7, 2026

Display device including a multi-layer thin film encapsulation layer

Inventors: Hyun Ho Jung (Yongin-si, KR); Young Tae Kim (Yongin-si, KR); Hyun Gue Song (Yongin-si, KR); Hee Seong Jeong (Yongin-si, KR); Sun Jin Joo (Yongin-si, KR); Sang Min Hong (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/873H10K59/879
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12677571
App. No.
18/313,664
Granted
Jul 7, 2026
Kind
B2
Abstract

A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 Å to 1400 Å, the first inorganic insulating layer has a thickness of 400 Å to 3500 Å, the second inorganic insulating layer has a thickness of 200 Å to 2400 Å, and the third inorganic insulating layer has a thickness of 4000 Å or more.

Claims (106)

1 . A display device, comprising:

a substrate;

a light emitting element disposed on the substrate and including a pixel electrode, a light emitting layer, and a common electrode;

a capping layer disposed on the common electrode of the light emitting element;

an auxiliary layer disposed on the capping layer; and

a thin film encapsulation layer including a first encapsulation layer disposed on the auxiliary layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer,

wherein the first encapsulation layer includes:

a first inorganic insulating layer disposed on the auxiliary layer and including silicon nitride;

a second inorganic insulating layer disposed on the first inorganic insulating layer and including silicon oxide; and

a third inorganic insulating layer disposed on the second inorganic insulating layer and including silicon oxynitride,

wherein the auxiliary layer has a thickness within a range of 200 Å to 1400 Å,

wherein the first inorganic insulating layer has a thickness within a range of 400 Å to 3500 Å,

wherein the second inorganic insulating layer has a thickness within a range of 200 Å to 2400 Å, and

wherein the third inorganic insulating layer has a thickness within a range of 4000 Å or more.

2 . The display device of claim 1 , wherein the first inorganic insulating layer is disposed directly on the auxiliary layer.

3 . The display device of claim 1 , wherein the auxiliary layer has a refractive index that is smaller than a refractive index of the capping layer,

wherein the first inorganic insulating layer has a refractive index that is greater than the refractive index of the auxiliary layer,

wherein the second inorganic insulating layer has a refractive index that is smaller than the refractive index of the first inorganic insulating layer, and

wherein the third inorganic insulating layer has a refractive index that is greater than the refractive index of the second inorganic insulating layer.

4 . The display device of claim 3 , wherein the capping layer has a refractive index in a range of 1.60 to 2.30,

wherein the auxiliary layer has a refractive index in a range of 1.20 to 1.62, and is smaller than the refractive index of the capping layer,

wherein the first inorganic insulating layer has a refractive index in a range of 1.70 to 2.0,

wherein the second inorganic insulating layer has a refractive index in a range of 1.20 to 1.62, and

wherein the third inorganic insulating layer has a refractive index in a range of 1.48 to 1.89, and the refractive index of the third inorganic insulating layer is greater than the refractive index of the second inorganic insulating layer.

5 . The display device of claim 3 , wherein the capping layer has a thickness of 850 Å,

wherein the auxiliary layer has a thickness of 400 Å,

wherein the first inorganic insulating layer has a thickness of 1300 Å,

wherein the second inorganic insulating layer has a thickness of 1400 Å, and

wherein the third inorganic insulating layer has a thickness of 7300 Å.

6 . The display device of claim 3 , wherein the capping layer has a thickness of 770 Å,

wherein the auxiliary layer has a thickness of 400 Å,

wherein the first inorganic insulating layer has a thickness of 1300 Å,

wherein the second inorganic insulating layer has a thickness of 1550 Å, and

wherein the third inorganic insulating layer has a thickness of 7300 Å.

7 . The display device of claim 3 , wherein the capping layer has a thickness of 850 Å,

wherein the auxiliary layer has a thickness of 400 Å,

wherein the first inorganic insulating layer has a thickness of 1500 Å,

wherein the second inorganic insulating layer has a thickness of 400 Å, and

wherein the third inorganic insulating layer has a thickness of 7300 Å.

8 . The display device of claim 3 , wherein the capping layer has a thickness of 750 Å,

wherein the auxiliary layer has a thickness of 400 Å,

wherein the first inorganic insulating layer has a thickness of 1600 Å,

wherein the second inorganic insulating layer has a thickness of 400 Å, and

wherein the third inorganic insulating layer has a thickness of 7300 Å.

9 . The display device of claim 1 , wherein the first encapsulation layer further includes a fourth inorganic insulating layer disposed on the third inorganic insulating layer, and a fifth inorganic insulating layer disposed on the fourth inorganic insulating layer, and

wherein the fourth inorganic insulating layer includes silicon oxynitride and has a thickness of within a range of 300 Å to 1000 Å.

10 . The display device of claim 9 , wherein the fourth inorganic insulating layer has a refractive index that is smaller than a refractive index of the third inorganic insulating layer, and

wherein the fifth inorganic insulating layer has a refractive index that is smaller than the refractive index of the fourth inorganic insulating layer.

11 . The display device of claim 9 , wherein the fourth inorganic insulating layer has a thickness of 700 Å, and

wherein the fifth inorganic insulating layer has a thickness of 800 Å.

12 . The display device of claim 9 , further comprising a sixth inorganic insulating layer disposed between the first inorganic insulating layer and the auxiliary layer,

wherein the sixth inorganic insulating layer includes silicon oxynitride and has a refractive index that is smaller than a refractive index of the fifth inorganic insulating layer.

13 . A display device, comprising:

a substrate;

a light emitting element disposed on the substrate and including a pixel electrode, a light emitting layer, and a common electrode;

a capping layer disposed on the common electrode of the light emitting element;

an auxiliary layer disposed on the capping layer; and

a thin film encapsulation layer including a first encapsulation layer disposed on the auxiliary layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer,

wherein the first encapsulation layer includes:

a first inorganic insulating layer disposed on the auxiliary layer and including silicon nitride;

a second inorganic insulating layer disposed on the first inorganic insulating layer and including silicon oxide; and

a third inorganic insulating layer disposed on the second inorganic insulating layer and including silicon oxynitride,

wherein the capping layer has a refractive index in a range of 1.60 to 2.30,

wherein the auxiliary layer has a refractive index in a range of 1.20 to 1.62, and is smaller than the refractive index of the capping layer,

wherein the first inorganic insulating layer has a refractive index in a range of 1.70 to 2.0,

wherein the second inorganic insulating layer has a refractive index in a range of 1.20 to 1.62, and

wherein the third inorganic insulating layer has a refractive index in a range of 1.48 to 1.89, and the refractive index of the third inorganic insulating layer is greater than the refractive index of the second inorganic insulating layer.

14 . The display device of claim 13 , wherein the auxiliary layer has a refractive index that is smaller than the refractive index of the capping layer,

wherein the first inorganic insulating layer has a refractive index that is greater than the refractive index of the auxiliary layer,

wherein the second inorganic insulating layer has a refractive index that is smaller than the refractive index of the first inorganic insulating layer, and

wherein the third inorganic insulating layer has a refractive index that is greater than the refractive index of the second inorganic insulating layer.

15 . The display device of claim 14 , wherein the capping layer has a refractive index of 1.97,

wherein the first inorganic insulating layer has a refractive index of 1.89, and

wherein the second inorganic insulating layer has a refractive index of 1.48.

16 . The display device of claim 15 , wherein the auxiliary layer includes lithium fluoride (LiF) and has a refractive index of 1.39.

17 . The display device of claim 15 , wherein the auxiliary layer includes silicon oxynitride and has a refractive index in a range of 1.48 to 1.57.

18 . The display device of claim 15 , wherein the third inorganic insulating layer a the refractive index of 1.62.

19 . The display device of claim 15 , wherein the third inorganic insulating layer has a refractive index of 1.57 to 1.77.

20 . The display device of claim 13 , further comprising a sixth inorganic insulating layer disposed between the first inorganic insulating layer and the auxiliary layer,

wherein the sixth inorganic insulating layer includes silicon oxynitride and has a refractive index in a range of 1.48 to 1.7, and the refractive index of the sixth inorganic insulating layer is smaller than the refractive index of the first inorganic insulating layer.

21 . An electronic device, comprising:

a display device including a display area and a non-display area at least partially surrounding the display area; and

an optical device overlapping a portion of the display area of the display device,

wherein the display device includes:

a substrate;

a light emitting element disposed on the substrate and including a pixel electrode, a light emitting layer, and a common electrode;

a capping layer disposed on the common electrode of the light emitting element;

an auxiliary layer disposed on the capping layer; and

a thin film encapsulation layer including a first encapsulation layer disposed on the auxiliary layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer,

wherein the first encapsulation layer includes:

a first inorganic insulating layer disposed on the auxiliary layer and including silicon nitride;

a second inorganic insulating layer disposed on the first inorganic insulating layer and including silicon oxide; and

a third inorganic insulating layer disposed on the second inorganic insulating layer and including silicon oxynitride,

wherein the auxiliary layer has a thickness in a range of 200 Å to 1400 Å,

wherein the first inorganic insulating layer has a thickness in a range of 400 Å to 3500 Å,

wherein the second inorganic insulating layer has a thickness in a range of 200 Å to 2400 Å, and

wherein the third inorganic insulating layer has a thickness in a range of 4000 Å or more.

22 . The electronic device of claim 21 , wherein the capping layer has a refractive index in a range of 1.60 to 2.30,

wherein the auxiliary layer has a refractive index in a range of 1.20 to 1.62, and the refractive index of the auxiliary layer is smaller than the refractive index of the capping layer,

wherein the first inorganic insulating layer has a refractive index in a range of 1.70 to 2.0,

wherein the second inorganic insulating layer has a refractive index in a range of 1.20 to 1.62, and

wherein the third inorganic insulating layer has a refractive index in a range of 1.48 to 1.89, and the refractive index of the third inorganic insulating layer is greater than the refractive index of the second inorganic insulating layer.

23 . The electronic device of claim 21 , wherein the first encapsulation layer further includes a fourth inorganic insulating layer disposed on the third inorganic insulating layer, and a fifth inorganic insulating layer disposed on the fourth inorganic insulating layer, and

wherein the fourth inorganic insulating layer includes silicon oxynitride and has a thickness in a range of 300 Å to 1000 Å,

wherein the fourth inorganic insulating layer has a refractive index that is smaller than a refractive index of the third inorganic insulating layer, and

wherein the fifth inorganic insulating layer has a refractive index that is smaller than the refractive index of the fourth inorganic insulating layer.