Piezoelectric laminate and piezoelectric element
A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.
1 . A piezoelectric laminate comprising, on a substrate in the following order:
a lower electrode layer; and
a piezoelectric film containing a perovskite-type oxide,
wherein the lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the substrate than the second layer,
the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and
the second layer contains Ir as a main component, and a thickness of the second layer is 50 nm or less.
2 . The piezoelectric laminate according to claim 1 ,
wherein the thickness of the second layer is 45 nm or less.
3 . The piezoelectric laminate according to claim 1 , further comprising:
a first intimate attachment layer that improves adhesiveness between the substrate and the first layer, between the substrate and the first layer.
4 . The piezoelectric laminate according to claim 3 ,
wherein the first intimate attachment layer is a TiW layer.
5 . The piezoelectric laminate according to claim 1 , further comprising:
a second intimate attachment layer that improves adhesiveness between the first layer and the second layer, between the first layer and the second layer.
6 . The piezoelectric laminate according to claim 5 ,
wherein the second intimate attachment layer is a TiW layer.
7 . The piezoelectric laminate according to claim 1 ,
wherein the first layer is a W layer.
8 . The piezoelectric laminate according to claim 1 ,
wherein the perovskite-type oxide is a compound represented by General Formula (1),
Pb{(Zr x Ti 1−x ) 1−y B1 y }O 3 (1)
0<x<1, 0<y<0.4, and
B1 is one or more elements selected from V, Nb, Ta, Sb, Mo, and W.
9 . The piezoelectric laminate according to claim 1 ,
wherein a half width at half maximum of an X-ray diffraction peak from a (111) plane of the Ir of the second layer is 0.3° or more.
10 . The piezoelectric laminate according to claim 1 ,
wherein the second layer is a uniaxial alignment film in which the Ir is aligned in a (111) plane, and
the (111) plane has an inclination of 1° or more with respect to a thickness direction.
11 . The piezoelectric laminate according to claim 1 ,
wherein a pyrochlore phase is included at an interface between the lower electrode layer and the piezoelectric film, and
a thickness of the pyrochlore phase is 20 nm or less.
12 . A piezoelectric element comprising:
the piezoelectric laminate according to claim 1 ; and
an upper electrode layer provided on the piezoelectric film of the piezoelectric laminate.