Magnetic array, magnetic array control method, and magnetic array control program

1 . A magnetic array comprising:

a plurality of magnetoresistance effect elements; and

a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements,

wherein each of the plurality of magnetoresistance effect elements includes a domain wall motion layer, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer,

wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements,

wherein the initialization pulse has a first pulse that is applied a plurality of times to widen a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and

wherein a voltage of each first pulse is smaller than a voltage of the operation pulse or each pulse length of the first pulse is shorter than a pulse length of the operation pulse.

2 . The magnetic array according to claim 1 ,

wherein the pulse application device is configured to apply the first pulse to each of the plurality of magnetoresistance effect elements under a same condition.

3 . The magnetic array according to claim 1 ,

wherein the pulse application device is able to change the polarity of the first pulse whenever the first pulse is applied a predetermined number of times.

4 . The magnetic array according to claim 3 ,

wherein the predetermined number of times is two or more.

5 . The magnetic array according to claim 1 ,

wherein the pulse application device is able to change the polarity of the first pulse every predetermined number of times, and

wherein the predetermined number of times is equal to or smaller than the number of times of applying the operation pulse required to move a domain wall from a first end to a second end of a domain wall movable area in which the domain wall is movable in the domain wall motion layer.

6 . The magnetic array according to claim 1 ,

wherein the initialization pulse further includes a second pulse, and

wherein the second pulse is applied under a condition that the resistance value of each of the plurality of magnetoresistance effect elements is changeable.

7 . The magnetic array according to claim 1 , further comprising:

a magnetic field application device which applies a magnetic field to each of the plurality of magnetoresistance effect elements,

wherein the magnetic field application device is able to set the initial distribution by applying a magnetic field to each of the plurality of magnetoresistance effect elements.

8 . The magnetic array according to claim 1 ,

wherein the initialization pulse further includes a third pulse for setting the initial distribution, and

wherein the pulse application device is able to set the initial distribution by applying the third pulse to each of the plurality of magnetoresistance effect elements.

9 . The magnetic array according to claim 8 ,

wherein the third pulse has a longer pulse length or a higher voltage than the first pulse.

10 . The magnetic array according to claim 1 ,

wherein the initialization pulse further includes a third pulse for setting the initial distribution,

wherein the pulse application device is able to set the initial distribution by applying the third pulse to each of the plurality of magnetoresistance effect elements, and

wherein the number of times of applying the third pulse is equal to or larger than the number of times of applying the operation pulse required to move a domain wall from a first end to a second end of a domain wall movable area in which the domain wall is movable in the domain wall motion layer.

11 . The magnetic array according to claim 1 ,

wherein the pulse application device is able to set a mode value of the initial distribution, and

wherein the mode value is in a range of 30% of a difference between a mean value of a maximum resistance value and a mean value of a minimum resistance value centering on a median value between the mean value of the maximum resistance value of each magnetoresistance effect element and the mean value of the minimum resistance value of each magnetoresistance effect element.

12 . The magnetic array according to claim 1 ,

wherein the pulse application device is able to set the mode value of the initial distribution, and

wherein the mode value is a mean value of a maximum resistance value of each magnetoresistance effect element or a mean value of a minimum resistance value of each magnetoresistance effect element.

13 . The magnetic array according to claim 1 ,

wherein the pulse application device sets a position of a domain wall of each domain wall motion layer to the first end or the second end of the domain wall movable area in which the domain wall is movable in the domain wall motion layer in the initial distribution.

14 . The magnetic array according to claim 1 , further comprising:

a resistance detection device which detects a resistance of each of the plurality of magnetoresistance effect elements.

15 . The magnetic array according to claim 1 ,

wherein the plurality of magnetoresistance effect elements are divided into a plurality of element groups, and

wherein the pulse application device is configured to apply the first pulse under a condition different from those of other element groups to at least one element group among the plurality of element groups.

16 . The magnetic array according to claim 15 ,

wherein the magnetic array is used in a neural network, and

wherein each of the plurality of element groups is responsible for operations between different layers in the neural network.

17 . A magnetic array comprising:

a plurality of magnetoresistance effect elements; and

a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements,

wherein each of the plurality of magnetoresistance effect elements includes a domain wall motion layer, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer,

wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements,

wherein the initialization pulse has a first pulse that is applied a plurality of times to widen a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and

wherein the first pulse is applied to each of the plurality of magnetoresistance effect elements under a condition that a probability that a resistance value of each magnetoresistance effect element changes when the first pulse is applied to each magnetoresistance effect element is larger than 0% and smaller than 100%,

wherein the operation pulse is applied to a predetermined magnetoresistance effect element after the initialization pulse under a condition that a probability that a resistance value of the predetermined magnetoresistance effect element changes is 100%.

18 . A magnetic array control method comprising:

an initialization step of initializing a plurality of magnetoresistance effect elements each including a domain wall motion layer, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer,

wherein the initialization step includes a first step of setting an initial distribution of resistance values of the plurality of magnetoresistance effect elements and a second step of applying a first pulse to each of the plurality of magnetoresistance effect elements a plurality of times to widen the initial distribution.

19 . The magnetic array control method according to claim 18 ,

wherein, in the second step, the first pulse is applied to each of the plurality of magnetoresistance effect elements under a condition that the probability that a resistance value of each magnetoresistance effect element changes when the first pulse is applied to each magnetoresistance effect element is larger than 0% and smaller than 100%.

20 . The magnetic array control method according to claim 18 , further comprising:

an operation step of operating the plurality of magnetoresistance effect elements after the initialization step,

wherein the operation step applies an operation pulse to a predetermined magnetoresistance effect element, and

wherein the first pulse has a voltage smaller than that of the operation pulse or a pulse length of each first pulse is shorter than a pulse length of the operation pulse.

21 . The magnetic array control method according to claim 18 ,

wherein the second step applies the first pulse to each of the plurality of magnetoresistance effect elements under a same condition.

22 . The magnetic array control method according to claim 18 ,

wherein, in the second step, the polarity of the first pulse is changed every predetermined number of times.

23 . The magnetic array control method according to claim 18 ,

wherein the initialization step includes a third step of applying a second pulse after the second step, and

wherein the second pulse is applied under a condition that a resistance value of each of the plurality of magnetoresistance effect elements is changeable.

24 . The magnetic array control method according to claim 18 ,

wherein, in the first step, a third pulse is applied to each of the plurality of magnetoresistance effect elements to set the initial distribution.

25 . The magnetic array control method according to claim 18 , further comprising:

a detection step of measuring a resistance value of each of the plurality of magnetoresistance effect elements after the initialization step.

26 . The magnetic array control method according to claim 18 ,

wherein, in the second step, the plurality of magnetoresistance effect elements are divided into a plurality of element groups and the first pulse under a condition different from those of other element groups is applied to at least one element group of the plurality of element groups.

27 . The magnetic array control method according to claim 26 ,

wherein the magnetic array control method is used in a neural network, and

wherein each of the plurality of element groups is responsible for operations between different layers in the neural network.

28 . A non-transitory computer readable media comprising:

an initialization program for instructing initialization of a plurality of magnetoresistance effect elements each including a domain wall motion layer, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer,

wherein the initialization program includes a first program for setting an initial distribution of resistance values of the plurality of magnetoresistance effect elements and a second program for applying a first pulse to each of the plurality of magnetoresistance effect elements a plurality of times to widen the initial distribution.

29 . The non-transitory computer readable media according to claim 28 ,

wherein the second program is instructed to apply the first pulse to each of the plurality of magnetoresistance effect elements under a condition that the probability that a resistance value of each magnetoresistance effect element changes when the first pulse is applied to each magnetoresistance effect element is larger than 0% and smaller than 100%.

30 . The non-transitory computer readable media according to claim 28 , further comprising:

an operating program for operating the plurality of magnetoresistance effect elements,

wherein the operating program applies an operation pulse to a predetermined magnetoresistance effect element, and

wherein the first pulse has a voltage smaller than that of the operation pulse or a pulse length of each first pulse is shorter than a pulse length of the operation pulse.

31 . The non-transitory computer readable media according to claim 28 ,

wherein the second program is instructed to apply the first pulse to each of the plurality of magnetoresistance effect elements under a same condition.

32 . The non-transitory computer readable media according to claim 28 ,

wherein the second program changes the polarity of the first pulse every predetermined number of times.

33 . The non-transitory computer readable media according to claim 28 ,

wherein the initialization program further includes a third program of instructing to apply a second pulse to each of the plurality of magnetoresistance effect elements after the second program, and

wherein the second pulse is able to change a resistance value of each of the plurality of magnetoresistance effect elements.

34 . The non-transitory computer readable media according to claim 28 ,

wherein the first program applies a third pulse to each of the plurality of magnetoresistance effect elements to set the initial distribution.

35 . The non-transitory computer readable media according to claim 28 , further comprising:

a detection program for measuring a resistance value of each of the plurality of magnetoresistance effect elements after the initialization program.

36 . The non-transitory computer readable media according to claim 28 ,

wherein the second program divides the plurality of magnetoresistance effect elements into a plurality of element groups and applies the first pulse under a condition different from those of other element groups to at least one element group among the plurality of element groups.

37 . The non-transitory computer readable media according to claim 36 ,

wherein a magnetic array control program is used to control a neural network, and

wherein each of the plurality of element groups is responsible for operations between different layers in the neural network.