Vapor deposition processes, reactants and deposition assemblies
Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.
1 . A method of depositing material comprising a metal on a substrate by a cyclic vapor deposition process, the method comprising
providing a substrate in a reaction chamber;
providing a first precursor into the reaction chamber in a vapor phase; and
providing a reactant into the reaction chamber in a vapor phase,
wherein the reactant comprises a compound of formula (I),
wherein R1 and R2 are the same or different, and independently selected from H, linear and branched alkyl groups, each comprising at least two carbon atoms, and Q is —OH or wherein when Q is —NH 2 , R1 and R2 are the same or different, and independently selected from linear and branched alkyl groups, each comprising at least two carbon atoms, or wherein R1 and R2 connect to form a ring structure and Q is —OH or —NH 2 ,
wherein the first precursor is a metal precursor, the reactant releases a reactive radical species and a long-lived radical species, and
wherein the reactive radical species reacts with the first precursor thereby depositing material comprising the metal on the substrate.
2 . The method of claim 1 , wherein the first precursor is a transition metal precursor.
3 . The method of claim 1 , wherein the metal of the first precursor is a main group metal.
4 . The method of claim 1 , wherein the first precursor comprises a ligand selected from the group consisting of beta-diketonate, amidinate, amidate, carbonyl, cyclopentadienyl, halide, alkyl, alkylamide, alkylimido, alkoxide, allyl, arene, and diazadiene.
5 . The method of claim 1 , wherein the reactive radical species released by the reactant is selected from a group consisting of H⋅ and NH 2 ⋅.
6 . The method of claim 1 , wherein Q is —OH.
7 . The method of claim 1 , wherein R1 and R2 connect to form a ring structure, wherein the ring structure comprises nitrogen and four carbon atoms or nitrogen and five carbon atoms.
8 . The method of claim 1 , wherein the long-lived radical species released by the reactant comprises at least four carbon atoms.
9 . The method of claim 8 , wherein the long-lived radical species released by the reactant comprises at least eight carbon atoms.
10 . The method of claim 1 , wherein the reactant releases a hydrogen radical (H⋅), and the material comprising a metal deposited on the substrate is an elemental metal.
11 . The method of claim 1 , wherein the reactant releases an amino radical (NH 2 ⋅), and the material comprising a metal deposited on the substrate comprises nitrogen.
12 . The method of claim 11 , wherein the material comprising a metal comprises a metal nitride.
13 . The method of claim 1 , wherein the method of depositing material is performed at a temperature that is lower than 200° C.
14 . The method of claim 1 , wherein a temperature in the reaction chamber is higher than the temperature of a source vessel of the reactant.
15 . The method of claim 1 , wherein the cyclic vapor deposition process comprises providing the first precursor and the reactant alternately and sequentially into the reaction chamber.
16 . The method of claim 1 , wherein the reaction chamber is purged between providing the first precursor and the reactant into the reaction chamber.
17 . A method of depositing material comprising a metal on a substrate by a cyclic vapor deposition process, the method comprising providing a substrate in a reaction chamber;
providing a first precursor into the reaction chamber in a vapor phase; and
providing a reactant into the reaction chamber in a vapor phase,
wherein the first precursor is CpCo(CO) 2 , the reactant is compound IIi, and the deposited material is metallic cobalt.
18 . A method of depositing material comprising a metal on a substrate by a cyclic vapor deposition process, the method comprising
providing a substrate in a reaction chamber;
providing a first precursor into the reaction chamber in a vapor phase; and
providing a reactant into the reaction chamber in a vapor phase,
wherein the first precursor is a metal precursor, the reactant releases a reactive radical species and a long-lived radical species, wherein the long-lived radical species released by the reactant comprises at least four atoms, and
wherein the reactive radical species reacts with the first precursor to deposit material comprising the metal on the substrate.
19 . The method of claim 18 , wherein the long-lived radical species released by the reactant comprises at least eight carbon atoms.
20 . The method of claim 18 , wherein the first precursor is a transition metal precursor or wherein the metal of the first precursor is a main group metal.
21 . The method of claim 18 , wherein the first precursor comprises a ligand selected from the group consisting of beta-diketonate, amidinate, amidate, carbonyl, cyclopentadienyl, halide, alkyl, alkylamide, alkylimido, alkoxide, allyl, arene, and diazadiene.
22 . The method of claim 18 , wherein the reactant releases a hydrogen radical (H⋅), and the material comprising a metal deposited on the substrate is an elemental metal.
23 . The method of claim 18 , wherein the reactant releases an amino radical (NH 2 ⋅), and the material comprising a metal deposited on the substrate comprises nitrogen.
24 . The method of claim 23 , wherein the material comprising a metal comprises a metal nitride.