Plasma edge ring, plasma etching apparatus including the same, and plasma etching method using the same
Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.
1 . A plasma etching apparatus, comprising:
a plasma electrode configured to support an etching target and generate a plasma above the etching target;
a plasma edge ring on the plasma electrode;
a guide electrode outside the etching target on the plasma electrode;
a guide voltage supply connected to the guide electrode; and
a plasma etching apparatus control device operably connected to the guide voltage supply,
wherein the plasma edge ring includes an inner sidewall surface including
a first surface portion that at least partially defines a placement hole that vertically penetrates a center of the plasma edge ring, and
a second surface portion that at least partially defines a recess that is recessed away from the center of the plasma edge ring in relation to the first surface portion of the inner sidewall surface,
wherein the guide electrode is outside or beneath the recess, and
wherein the plasma etching apparatus control device is configured to operably control the guide voltage supply to cause the guide electrode to generate a magnetic field and/or an electric field to cause particles generated by the plasma to be guided away from the etching target towards the guide electrode and into the recess, such that the recess receives the particles generated by the plasma.
2 . The plasma etching apparatus of claim 1 , wherein the guide electrode is within the plasma edge ring.
3 . The plasma etching apparatus of claim 1 , wherein the plasma electrode includes:
an electrode body; and
a plateau on the electrode body,
wherein the plateau is in the placement hole, and
wherein the plasma edge ring surrounds the plateau.
4 . The plasma etching apparatus of claim 1 , wherein the recess is beneath a top surface of the plasma edge ring and is isolated from exposure to an exterior of the plasma edge ring in a vertical direction by the top surface of the plasma edge ring.
5 . The plasma etching apparatus of claim 1 , wherein, in a plan view, the placement hole has a tetragonal shape.
6 . A plasma etching apparatus, comprising:
a plasma electrode configured to generate a plasma;
a support member on a top surface of the plasma electrode configured to support an etching target;
a plasma edge ring that surrounds the support member;
a guide electrode;
a plasma voltage supply that is configured to apply a first voltage to the plasma electrode;
a guide voltage supply that is configured to apply a second voltage to the guide electrode; and
a plasma etching apparatus control device operably connected to the guide voltage supply,
wherein the guide electrode is outside the support member, and
wherein the plasma edge ring includes an inner sidewall surface including
a first surface portion that at least partially defines a placement hole that vertically penetrates a center of the plasma edge ring; and
a second surface portion that at least partially defines a recess that is recessed away from the center of the plasma edge ring in relation to the first surface portion of the inner sidewall surface,
wherein the second surface portion includes a recess bottom surface that at least partially defines the recess and is at a level lower than a level of the support member, and
wherein the plasma etching apparatus control device is configured to operably control the guide voltage supply to cause the guide electrode to generate a magnetic field and/or an electric field to cause particles generated by the plasma to be guided away from the etching target towards the guide electrode and into the recess, such that the recess receives the particles generated by the plasma.
7 . The plasma etching apparatus of claim 6 , wherein the plasma electrode includes:
an electrode body; and
a plateau on the electrode body,
wherein the plateau is in the placement hole,
wherein the plasma edge ring surrounds the plateau, and
wherein the support member is on a top surface of the plateau.
8 . The plasma etching apparatus of claim 6 , wherein
the plasma edge ring includes one or more inner surfaces that at least partially define a guide electrode insertion hole, and
the guide electrode is in the guide electrode insertion hole.
9 . The plasma etching apparatus of claim 6 , wherein
the guide electrode is outside or beneath the recess.
10 . The plasma etching apparatus of claim 9 , wherein the recess is covered with a top surface of the plasma edge ring and is isolated from exposure to an exterior of the plasma edge ring in a vertical direction by the top surface of the plasma edge ring.
11 . The plasma etching apparatus of claim 9 , wherein
the plasma edge ring has a circular shape when viewed in plan, and
in a plan view, the placement hole has a tetragonal shape.
12 . The plasma etching apparatus of claim 9 , wherein the plasma edge ring includes:
a cover ring; and
a capture ring on the cover ring,
wherein the recess is in the capture ring.