IP Library Granted Patent US 12677635
Granted Patent B2
US 12677635 · App. 18/052,589 · Granted Jul 7, 2026

Member for semiconductor manufacturing apparatus

Inventors: Seiya Inoue (Handa-City, JP); Tatsuya Kuno (Nagoya-City, JP); Tomoki Nagae (Nagoya-City, JP); Yusuke Ogiso (Nagakute-City, JP); Takuya Yoto (Nagoya-City, JP)
Assignee: NGK INSULATORS, LTD.
H10P72/722H10P72/0432H10P72/7624
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Quick Facts
Patent No.
US 12677635
App. No.
18/052,589
Granted
Jul 7, 2026
Kind
B2
Abstract

A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface; and a porous plug that is disposed in a plug insertion hole penetrating the ceramic plate in a up-down direction, and allows a gas to flow, wherein the porous plug has a first porous member exposed to the wafer placement surface, and a second porous member having an upper surface covered by the first porous member, the first porous member is higher in purity and smaller in thickness than the second porous member, and the second porous member is higher in porosity than the first porous member.

Claims (31)

1 . A member for semiconductor manufacturing apparatus, comprising:

a ceramic plate having a wafer placement surface on its upper surface; and

a porous plug that is disposed in a plug insertion hole penetrating the ceramic plate in an up-down direction, and allows a gas to flow,

a conductive substrate provided in a lower surface of the ceramic plate,

a communication hole provided in the conductive substrate to communicate with the porous plug, and

an insulating pipe bonded to an inner peripheral surface of the communication hole,

wherein the porous plug has a first porous member exposed to the wafer placement surface, and a second porous member having an upper surface completely covered by a lower surface of the first porous member,

the first porous member is higher in purity and smaller in thickness than the second porous member, and

the second porous member is higher in porosity than the first porous member,

and

wherein the first porous member is disposed above the second porous member in the up-down direction of the ceramic plate, and

wherein a lower surface of the second porous member is located inside the communication hole.

2 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the first porous member is a thermal spray film.

3 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the plug insertion hole has a female thread portion on an inner peripheral surface, and the porous plug has a male thread portion to be screwed into the female thread portion, on an outer peripheral surface.

4 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the first porous member has an inverted circular truncated cone shape with an upper base larger than a lower base.

5 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the second porous member has an enlarged-diameter section a diameter of which increases downward from top.

6 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the wafer placement surface has a large number of small projections that support a wafer, and

an upper surface of the first porous member of the porous plug is located at a position lower than an upper surface of the small projections.

7 . The member for semiconductor manufacturing apparatus according to claim 6 ,

wherein the upper surface of the first porous member of the porous plug is at a same height as or at a position lower than a reference surface of the wafer placement surface, in a range of 0.5 mm or less, the reference surface being not provided with the small projections.

8 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the second porous member is not exposed to the wafer placement surface.

9 . The member for semiconductor manufacturing apparatus according to claim 8 ,

wherein the second porous member is completely enclosed within the ceramic plate.

10 . The member for semiconductor manufacturing apparatus according to claim 1 ,

wherein the lower surface of the second porous member is in contact with the insulating pipe.