Bottom layer metal interconnection line structure
The present application provides a bottom layer metal interconnection line structure, at least including a test key and leads connected to the test key; the test key being composed of a plurality of metal lines connected end-to-end; the plurality of metal lines being arranged in the same plane in a winding manner, wherein at least one suspending via structure is provided at each winding point; and two leads are provided and respectively connected to ends of the metal lines located at a head end and a tail end in the test key. The present application increases a maximum root-mean-square current that the winding metal interconnection lines can withstand while improving a heat dissipation problem of the bottom layer metal interconnection lines.
1 . A bottom layer metal interconnection line structure, at least comprising:
a test key and leads connected to the test key, the test key being composed of a plurality of metal lines connected end-to-end, the plurality of metal lines being arranged in a same plane in a winding manner, wherein at least one suspending via structure is provided at each winding point,
wherein the leads comprise two leads respectively connected to ends of the metal lines located at a head end and a tail end in the test key,
wherein the metal lines are placed longitudinally, the leads are placed transversely,
the winding point comprises a connection end between adjacent metal lines of the test key, and
the test key is configured for bottom layer metal interconnect and heat dissipation.
2 . The bottom layer metal interconnection line structure according to claim 1 , wherein the plurality of metal lines have a same length; and the plurality of metal lines have a same width.
3 . The bottom layer metal interconnection line structure according to claim 1 , wherein the at least one suspending via structure comprises a downward suspending via structure, wherein the downward suspending via structure is distributed below and perpendicular to the plane.
4 . The bottom layer metal interconnection line structure according to claim 3 , wherein an interlayer dielectric fully fills between downward suspending via structures.
5 . The bottom layer metal interconnection line structure according to claim 4 , wherein the test key and the leads are covered with an intermetallic dielectric.
6 . The bottom layer metal interconnection line structure according to claim 5 , wherein the intermetallic dielectric is covered with an upper layer metal, and a depth of the downward suspending via structure does not exceed a half of a depth of the upper layer metal.