Substrate bonding method
A substrate bonding method includes: forming first plasma on a bonding surface of a first substrate at atmospheric pressure by using a mixed gas including an inert gas and water vapor, to thereby perform surface activation treatment on the bonding surface of the first substrate; forming second plasma on a bonding surface of a second substrate at atmospheric pressure by using the mixed gas, to thereby perform surface activation treatment on the bonding surface of the second substrate; bonding the bonding surface of the first substrate and the bonding surface of the second substrate to each other; and moving each of the first substrate and the second substrate at a constant speed in a region above a linear reactor in which the first plasma and the second plasma are formed.
1 . A substrate bonding method comprising:
forming first plasma on a bonding surface of a first substrate at atmospheric pressure by using a mixed gas comprising an inert gas and water vapor, to thereby perform surface activation treatment on the bonding surface of the first substrate;
forming second plasma on a bonding surface of a second substrate at atmospheric pressure by using the mixed gas, to thereby perform surface activation treatment on the bonding surface of the second substrate;
bonding the bonding surface of the first substrate and the bonding surface of the second substrate to each other; and
moving each of the first substrate and the second substrate at a constant speed in a region above a linear reactor in which the first plasma and the second plasma are formed.
2 . The substrate bonding method of claim 1 , wherein the inert gas comprises argon (Ar), and
wherein a flow rate of the mixed gas is regulated to be from 100 sccm to 950 sccm.
3 . The substrate bonding method of claim 1 , wherein a radio frequency (RF) power for the forming the first plasma and the forming the second plasma at atmospheric pressure is regulated to be from 300 W to 900 W, and an RF frequency for the forming the first plasma and the forming the second plasma is regulated to be from 13.56 M to 100 M.
4 . The substrate bonding method of claim 1 , wherein hydroxyl groups (—OH) are distributed on each of the bonding surface of the first substrate and the bonding surface of the second substrate by the surface activation treatment.
5 . The substrate bonding method of claim 1 , further comprising linearly reciprocating a stage on which the first substrate and the second substrate are provided; and
moving the stage at a moving speed from 5 mm/s to 60 mm/s.
6 . The substrate bonding method of claim 1 , further comprising repeatedly moving the first substrate and the second substrate above the linear reactor.
7 . The substrate bonding method of claim 1 , wherein the water vapor is supplied from ultrapure water.
8 . The substrate bonding method of claim 1 , wherein the water vapor is supplied by a vaporizer.
9 . The substrate bonding method of claim 1 , wherein the water vapor is supplied by a bubbler.
10 . The substrate bonding method of claim 1 , wherein the bonding comprises bonding the bonding surface of the first substrate and the bonding surface of the second substrate to each other using hybrid bonding.