Semiconductor module comprising at least one semiconductor element

1 . A semiconductor module, comprising:

a first substrate:

a second substrate composed of a first layer a second layer and a third layer which form a closed hollow chamber structure, the second layer interposed between the first layer and the third layer;

a semiconductor element having a first side connected to the first substrate in a planar manner and a second side which faces away from the first side and is connected to the third layer of the second substrate in a planar manner;

a phase change material arranged in the closed hollow chamber structure of the second substrate and in thermally conductive connection with the semiconductor element, and

a first set of metallic fins in thermally conductive connection with the first layer and a first second set of metallic fins in thermally conductive connection with the second layer, with the first set and the second set of the metallic fins in thermally conductive connection with the phase change material without direct material contact between the metallic fins of the first set and the second set.

2 . The semiconductor module of claim 1 , wherein the cavity hollow chamber structure has a circumferential edge metallization.

3 . The semiconductor module of claim 1 , wherein the closed hollow chamber structure of the second substrate comprises a cavity with a closure apparatus.

4 . The semiconductor module of claim 1 , wherein the phase change material has a melting point in a range of 90° C. to 175° C.

5 . The semiconductor module of claim 1 , wherein the semiconductor element is connected in a materially bonded manner to an upper metallization of the first substrate and/or to a substrate metallization of the second substrate.

6 . The semiconductor module of claim 5 , wherein the phase change material is in thermally conductive connection with the semiconductor element via the substrate metallization of the second substrate.

7 . A power converter, comprising a semiconductor module as set forth in claim 1 .

8 . A semiconductor module, comprising:

a first substrate;

a second substrate having a closed continuous hollow chamber structure;

a semiconductor element having a first side connected to the first substrate in a planar manner and a second side which faces away from the first side and is connected to the second substrate in a planar manner; and

a phase change material arranged in the closed continuous hollow chamber structure of the second substrate and in thermally conductive connection with the semiconductor element, wherein

the closed continuous hollow chamber structure comprises a compensation structure configured to store excess phase change material and to compensate a volume change in the phase change material.

9 . A power converter, comprising a semiconductor module as set forth in claim 8 .

10 . A method, comprising:

connecting a first side of a semiconductor element to a first substrate in a planar manner;

connecting a second side of the semiconductor element, which second side faces away from the first side, to a second substrate in a planar manner;

arranging a phase change material in a closed continuous hollow chamber structure of the second substrate, so that the phase change material is in thermally conductive connection with the semiconductor element;

solidifying the phase change material in the hollow chamber structure;

metallizing the solidified phase change material on both sides to close the hollow chamber structure;

inserting fins into the solidified phase change material; and

connecting the fins to a substrate metallization of the second substrate by metallization.