Stress reduction structures for a semiconductor die in a composite package and methods of forming the same

1 . A device structure comprising a composite package, wherein the composite package comprises a first semiconductor die which comprises:

a semiconductor substrate;

dielectric material layers overlying the semiconductor substrate;

an edge ring seal structure laterally enclosing the dielectric material layers;

at least one passivation dielectric layer overlying the dielectric material layers; and

a capping metal ring contacting a top surface segment of the edge ring seal structure and laterally surrounding a lower portion of the at least one passivation dielectric layer, wherein:

the edge ring seal structure comprises two lengthwise segments that are parallel to first sidewalls of the first semiconductor die, two widthwise segments that are parallel to second sidewalls of the first semiconductor die, and four slanted corner segments that connect a respective one of the two lengthwise segments and a respective one the two widthwise segments; and

a corner region of the at least one passivation dielectric layer located between a vertical plane including an inner sidewall of the four slanted corner segments of the edge ring seal structure and a vertical line containing a most proximal corner edge of the first semiconductor die is free of any metallic material other than a respective single slanted bar segment of the capping metal ring.

2 . The device structure of claim 1 , further comprising a first molding compound die frame that laterally surrounds the first semiconductor die.

3 . The device structure of claim 2 , further comprising:

a second semiconductor die overlying or underlying the first semiconductor die and bonded to the first semiconductor die; and

a second molding compound die frame that laterally surrounds the first semiconductor die and contacting a horizontal surface of the first molding compound die frame, wherein sidewalls of the second molding compound die frame are vertically coincident with sidewalls of the first molding compound die frame.

4 . The device structure of claim 1 , wherein an entirety of a region of the at least one passivation dielectric layer located between outer sidewalls of the capping metal ring and a combination of the first sidewalls and the second sidewalls of the first semiconductor die having no metallic material formed therein.

5 . The device structure of claim 1 , wherein a peripheral region of the at least one passivation dielectric layer located between outer sidewalls of the capping metal ring and sidewalls of the first semiconductor die has formed therein at least one metallic bar structure having a same material composition as the capping metal ring and laterally extending parallel to a respective sidewall of the first sidewalls and the second sidewalls of the first semiconductor die.

6 . The device structure of claim 1 , wherein the capping metal ring comprises two first bar segments that are parallel to first sidewalls of the first semiconductor die, two second bar segments that are parallel to second sidewalls of the first semiconductor die, and four slanted bar segments that connect a respective one of the two first bar segments and a respective one the two second bar segments and located in the corner region of the at least one passivation dielectric layer.

7 . The device structure of claim 6 , wherein the four slanted bar segments has a width in a range from 3.2 microns to 7.2 microns.

8 . The device structure of claim 6 , wherein the region at which the four slanted bar segments is adjoined to a respective one of the two first bar segments and the two second bar segments is laterally spaced from a sidewall selected from the two first sidewalls and the second sidewalls of the first semiconductor die by an offset distance in a range from 27 microns to 90 microns.

9 . The device structure of claim 6 , wherein:

a ratio of a length of one of the two first bar segments to a length of one of the first sidewalls of the first semiconductor die is in a range from 0.8500 to 0.9948; and

a ratio of a length of one of the two second bar segments to a length of one of the second sidewalls of the first semiconductor die is in a range from 0.8500 to 0.9948.

10 . The device structure of claim 1 , wherein:

the dielectric material layers overlie the semiconductor substrate and has formed therein metal interconnect structures; and

the edge ring seal structure vertically extends from the semiconductor substrate to a bottom surface of the at least one passivation dielectric layer.

11 . The device structure of claim 1 , wherein the at least one passivation dielectric layer comprises:

a first passivation dielectric layer contacting a topmost surface of the dielectric material layers;

at least one second passivation dielectric layer contacting a topmost surface of the capping metal ring; and

a third passivation dielectric layer overlying, and vertically spaced from, the capping metal ring.

12 . The device structure of claim 1 , wherein the first semiconductor die comprises a field effect transistor located on, or above, the semiconductor substrate.

13 . A device structure comprising a composite package, wherein the composite package comprises a first semiconductor die which comprises:

a semiconductor substrate;

dielectric material layers overlying the semiconductor substrate;

an edge ring seal structure laterally enclosing the dielectric material layers without any lateral opening therethrough;

at least one passivation dielectric layer overlying the dielectric material layers;

a capping metal ring contacting a top surface segment of the edge ring seal structure and laterally surrounding a lower portion of the at least one passivation dielectric layer; and

a spacer metal ring formed within the at least one passivation dielectric layer and located inside the capping metal ring and having a topmost surface that is located above a horizontal plane including a topmost surface of the capping metal ring.

14 . The device structure of claim 13 , wherein:

a lower portion of the spacer metal ring has a same material composition as the capping metal ring and comprises a horizontal surface located within a horizontal plane including a topmost surface of the capping metal ring; and

an upper portion of the spacer metal ring has a different material composition than the capping metal ring.

15 . The device structure of claim 13 , wherein the at least one passivation dielectric layer comprises:

a first passivation dielectric layer contacting a topmost surface of the dielectric material layers;

at least one second passivation dielectric layer contacting a topmost surface of the capping metal ring; and

a third passivation dielectric layer overlying, and vertically spaced from, the capping metal ring.

16 . A device structure comprising a composite package, wherein the composite package comprises a first semiconductor die, the first semiconductor die comprising:

a semiconductor substrate;

dielectric material layers overlying the semiconductor substrate;

an edge ring seal structure laterally enclosing the dielectric material layers without any lateral opening therethrough, wherein the edge ring seal structure comprises two lengthwise segments, two widthwise segments, and four slanted corner segments;

at least one passivation dielectric layer overlying the dielectric material layers; and

a capping metal ring contacting a top surface segment of the edge ring seal structure and laterally surrounding a lower portion of the at least one passivation dielectric layer,

wherein a corner region of the at least one passivation dielectric layer, located between a vertical plane including an inner sidewall of the four slanted corner segments of the edge ring seal structure and a vertical line containing a most proximal corner edge of the first semiconductor die, is free of any metallic material other than a respective single slanted bar segment of the capping metal ring.

17 . The device structure of claim 16 , further comprising:

a first molding compound die frame that laterally surrounds the first semiconductor die;

a second semiconductor die overlying or underlying the first semiconductor die and bonded to the first semiconductor die; and

a second molding compound die frame that laterally surrounds the first semiconductor die and contacts a horizontal surface of the first molding compound die frame.

18 . The device structure of claim 16 , wherein the capping metal ring comprises:

two first bar segments that are parallel to first sidewalls of the first semiconductor die;

two second bar segments that are parallel to second sidewalls of the first semiconductor die; and

four slanted bar segments that connect a respective one of the two first bar segments and a respective one the two second bar segments and are located in a respective corner region of the at least one passivation dielectric layer.

19 . The device structure of claim 18 , wherein a region at which the four slanted bar segments is adjoined to a respective one of the two first bar segments and the two second bar segments is laterally spaced from a sidewall selected from the two first sidewalls and the two second sidewalls of the first semiconductor die by an offset distance in a range from 27 microns to 90 microns.

20 . The device structure of claim 16 , further comprising a spacer metal ring formed within the at least one passivation dielectric layer and located inside the capping metal ring, the spacer metal ring having a topmost surface that is located above a horizontal plane including a topmost surface of the capping metal ring.