Electronic device

1 . An electronic device, comprising:

a first interconnection structure;

a first electronic component disposed over the first interconnection structure, wherein a backside surface of the first electronic component facing the first interconnection structure;

a second electronic component disposed over the first interconnection structure, wherein a backside surface of the second electronic component facing the first interconnection structure;

a second interconnection structure disposed over the first electronic component and the second electronic component;

a power connection disposed between the first interconnection structure and an active surface of the first electronic component;

a conductive element extending along a lateral surface of the first electronic component and electrically connected between the first interconnection structure and the second interconnection structure;

a ground connection disposed between the first interconnection structure and the active surface of the first electronic component; and

an encapsulant disposed between the first interconnection structure and the second interconnection structure, wherein the first electronic component includes a plurality of electrical contacts connecting between the active surface of the first electronic component and the second interconnection structure, and the encapsulant covers the plurality of electrical contacts,

wherein the power connection includes a plurality of conductive pillars connecting between the first interconnection structure and the backside surface of the first electronic component, and wherein the plurality of conductive pillars are covered by the encapsulant,

wherein the ground connection is configured to block an electromagnetic interference (EMI) between the power connection and the conductive element, and

wherein the second interconnection structure includes a low-density circuit region and a high-density circuit region embedded in the low-density circuit region, wherein the high-density circuit region electrically connects the first electronic component with the second electronic component, and wherein the low-density circuit region electrically connects the first electronic component with the first interconnection structure,

wherein the power connection includes a first conductive layer disposed adjacent to the backside surface of the first electronic component and connecting a first group of the plurality of conductive pillars to a first through-silicon via (TSV) disposed within the first electronic component, and

wherein the power connection includes a second conductive layer disposed adjacent to the backside surface of the first electronic component and connecting a second group of the plurality of conductive pillars to a second TSV disposed within the first electronic component.

2 . The electronic device of claim 1 , wherein the power connection includes a plurality of TSVs disposed within the first electronic component, wherein each of the TSVs is aligned with a corresponding one of the plurality of conductive pillars.

3 . The electronic device of claim 1 , wherein the first group of the plurality of conductive pillars and the second group of the plurality of conductive pillars are assigned to different power nets and are configured to transmit different voltages to regions with different functions of the first electronic component.

4 . The electronic device of claim 1 , wherein the power connection is overlapped with the high-density circuit region in a direction substantially perpendicular to the active surface of the first electronic component, and the ground connection is non-overlapped with the high-density circuit region in the direction.

5 . An electronic device, comprising:

a first electronic component;

a second electronic component disposed adjacent to the first electronic component;

an interconnection structure including a low-density circuit region and a high-density circuit region embedded in the low-density circuit region, wherein the high-density circuit region electrically connects the first electronic component with the second electronic component;

a plurality of first ground vias disposed in the first electronic component; and

a plurality of first power vias disposed in the first electronic component and disposed between the second electronic component and at least one of the plurality of first ground vias,

wherein the plurality of first power vias are overlapped with the high-density circuit region in a direction substantially perpendicular to an active surface of the first electronic component, and the plurality of first ground vias are non-overlapped with the high-density circuit region in the direction.

6 . The electronic device of claim 5 , further comprising:

a plurality of conductive pillars disposed over a backside surface of the first electronic component, wherein each of the plurality of first ground vias is aligned with a corresponding one of the plurality of conductive pillars.

7 . The electronic device of claim 5 , further comprising:

a plurality of non-power connections disposed around the first electronic component and the second electronic component, wherein the low-density circuit region electrically connects the first electronic component with the plurality of non-power connections.