Method for producing a package substrate including a composition for removing the photoresist
The present invention provides: an aqueous composition capable of removing a photoresist from a printed wiring board or a semiconductor wafer while preventing corrosion of tin plating and tin alloy plating in addition to a copper wiring; and a method for removing a photoresist using the aqueous composition. The aqueous composition according to the present invention is characterized by comprising an alkanolamine (A), a quaternary ammonium hydroxide (B), a sugar alcohol (C), a polar organic solvent (D), and water (E), wherein, with respect to the total amount of the composition, the content of the alkanolamine (A) is 2.5-50 mass %, the content of the quaternary ammonium hydroxide (B) is 0.5-4 mass %, and the content of the sugar alcohol (C) is 0.5-20 mass %.
1 . A method for producing a package substrate having a copper wiring and a circuit pattern, the method comprising:
forming a copper layer on an insulation layer at least partially having the copper wiring;
forming a dry film resist layer on the copper layer;
exposing the dry film resist layer;
developing the dry film resist layer such that a resist pattern comprising a photoresist is formed;
forming a copper plating on an opening of the resist pattern;
forming at least one selected from the group consisting of a tin plating and a tin alloy plating onto the copper plating such that the circuit pattern is formed, wherein the circuit pattern forms a connecting terminal portion of the copper wiring, and comprises copper, and at least one selected from the group consisting of tin and a tin alloy;
contacting the photoresist, after the circuit pattern is formed, with a composition such that the photoresist is removed; and
removing an exposed copper layer after the photoresist is removed,
wherein the composition comprises
2.5 to 30% by mass of an alkanolamine,
0.5 to 4% by mass of a quaternary ammonium hydroxide,
0.5 to 20% by mass of a sugar alcohol, each mass percent with respect to a total mass of the composition,
1.5 to 8% by mass of a polar organic solvent comprising at least one selected from the group consisting of phenyl glycol and diethylene glycol monophenyl ether, and
60% to 95% by mass water, and
the composition does not substantially contain an azole compound.
2 . A method for producing a semiconductor package, the method comprising:
producing a package substrate by the method of claim 1 ;
bringing together the package substrate and a semiconductor device such that connecting portions thereof are opposed to each other; and
heating to a temperature at which at least one selected from the group consisting of tin and the tin alloy is melted, to thereby electrically connect the semiconductor device to the package substrate via at least one selected from the group consisting of tin and a tin alloy.
3 . The method of claim 1 , wherein the composition has an etching rate of at least one selected from the group consisting of tin and a tin alloy that is 0.1 μm/min or less at a temperature of 50° C.
4 . The method of claim 1 , wherein the water is present at 70% to 95% by mass with respect to the total mass of the composition.
5 . The method of claim 1 , wherein the polar organic solvent is present at 0.5 to 10% by mass with respect to the total mass of the composition.
6 . The method of claim 1 , wherein the sugar alcohol comprises at least one selected from the group consisting of sorbitol, xylitol, and mannitol.
7 . The method of claim 1 , wherein the quaternary ammonium hydroxide comprises at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and triethylmethylammonium hydroxide.
8 . The method of claim 1 , wherein the alkanolamine comprises at least one selected from the group consisting of 2-aminoethanol (monoethanolamine) and 1-amino-2-propanol.
9 . A method for producing a semiconductor device having a copper wiring and a circuit pattern, the method comprising:
forming a barrier metal layer on an insulation layer at least partially having the copper wiring;
forming a copper layer on the barrier metal layer;
forming a dry film resist layer on the copper layer;
exposing the dry film resist layer;
developing the dry film resist layer such that a resist pattern comprising a photoresist is formed;
forming a copper plating on an opening of the resist pattern;
forming at least one selected from the group consisting of a tin plating and a tin alloy plating onto the copper plating such that the circuit pattern is formed, wherein the circuit pattern forms a connecting terminal portion of the copper wiring, and comprises copper, and at least one selected from the group consisting of tin and a tin alloy;
contacting the photoresist, after the circuit pattern is formed, with a composition such that the photoresist is removed; and
removing an exposed copper layer after the photoresist is removed,
wherein the composition comprises
2.5 to 30% by mass of an alkanolamine,
0.5 to 4% by mass of a quaternary ammonium hydroxide,
0.5 to 20% by mass of a sugar alcohol, each mass percent with respect to a total mass of the composition for removing a photoresist,
1.5 to 8% by mass of a polar organic solvent comprising at least one selected from the group consisting of phenyl glycol and diethylene glycol monophenyl ether, and
60% to 95% by mass water, and
the composition does not substantially contain an azole compound.
10 . A method for producing a semiconductor package, the method comprising:
producing a semiconductor device by the method of claim 9 ,
bringing together a package substrate and the semiconductor device such that connecting portions thereof are opposed to each other; and
heating to a temperature at which at least one selected from the group consisting of tin and the tin alloy is melted, to thereby electrically connect the semiconductor device to the package substrate via at least one selected from the group consisting of tin and a tin alloy.
11 . The method of claim 9 , wherein the composition for removing a photoresist has an etching rate of at least one selected from the group consisting of tin and a tin alloy that is 0.1 μm/min or less at a temperature of 50° C.
12 . The method of claim 9 , wherein the water is present in the composition for removing a photoresist at 70% to 95% by mass with respect to the total mass of the composition for removing a photoresist.
13 . The method of claim 9 , wherein the polar organic solvent is present at 0.5 to 10% by mass with respect to the total mass of the composition.
14 . The method of claim 9 , wherein the sugar alcohol comprises at least one selected from the group consisting of sorbitol, xylitol, and mannitol.
15 . The method of claim 9 , wherein the quaternary ammonium hydroxide comprises at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and triethylmethylammonium hydroxide.
16 . The method of claim 9 , wherein the alkanolamine comprises at least one selected from the group consisting of 2-aminoethanol (monoethanolamine) and 1-amino-2-propanol.