Manufacturing method of semiconductor device, semiconductor device, and electronic apparatus
A manufacturing method of a semiconductor device forms an external connection terminal in a relatively short time and at a low cost and improves mounting reliability of a mounting substrate. The method includes a step of preparing a frame body portion that has a plate shape, and a lead frame that has a plurality of terminal portions paired and provided such that at least a part of the terminal portions overlap with each other on plate surfaces on both sides of the frame body portion in a plate surface view, a step of mounting the lead frame on a semiconductor device body that includes a semiconductor element by joining the terminal portion on one plate surface of the plate surfaces of the frame body portion to an electrode portion of the semiconductor device body, and a step of forming a columnar terminal that protrudes from the electrode portion of the semiconductor device body by partially removing the frame body portion by etching with use of a mask including the terminal portion on the other plate surface of the frame body portion.
1 . A manufacturing method of a semiconductor device, comprising:
preparing a frame body portion that has a plate shape;
preparing a lead frame including a plurality of terminal portions, wherein
the preparing of the lead frame includes:
plating the frame body portion; and
forming the plurality of terminal portions based on the plating of the frame body portion,
a first pair of the plurality of terminal portions is on a first plate surface of the frame body portion,
a second pair of the plurality of terminal portions is on a second plate surface of the frame body portion,
the first pair of the plurality of terminal portions is larger than the second pair of the plurality of terminal portions,
the first plate surface is opposite to the second plate surface,
each of the first pair of the plurality of terminal portions has an elliptic shape,
each of the second pair of the plurality of terminal portions has a circular shape, and
a long diameter direction of the elliptic shape extends toward a central portion of a semiconductor element, and
at least a part of the first pair of the plurality of terminal portions and at least a part of the second pair of the plurality of terminal portions overlap in a plate surface view of the lead frame;
joining each of the first pair of the plurality of terminal portions to an electrode portion of a semiconductor device body, wherein the semiconductor device body includes the semiconductor element;
mounting the lead frame on the semiconductor device body based on the joining of each of the first pair of the plurality of terminal portions to the electrode portion of the semiconductor device body;
filling a space between the lead frame and the semiconductor device body with a fluid having an insulation property after the mounting of the lead frame and before formation of a columnar terminal;
removing the frame body portion by etching with use of a mask, wherein
the mask includes the second pair of the plurality of terminal portions on the second plate surface of the frame body portion,
the removal of the frame body portion is in a plate thickness direction of the frame body portion, and
the removal of the frame body portion is prior to the mounting of the lead frame on the semiconductor device body; and
forming the columnar terminal, based on the removal of the frame body portion, wherein the columnar terminal protrudes from the electrode portion.
2 . The manufacturing method of the semiconductor device according to claim 1 , further comprising:
singulating the lead frame into a plurality of chips, wherein the plurality of chips are in correspondence with a plurality of semiconductor elements; and
mounting the plurality of chips on the semiconductor device body, wherein
the semiconductor device body further includes an integrated plate-shaped body,
the integrated plate-shaped body includes the plurality of the semiconductor elements an aggregate state,
the singulation of the lead frame is executed after the removal of the frame body portion, and
the plurality of chips is mounted on the semiconductor device body during the mounting of the lead frame on the semiconductor device body.
3 . The manufacturing method of the semiconductor device according to claim 1 , wherein the fluid, that fills the space between the lead frame and the semiconductor device body, includes a photoresist.
4 . A semiconductor device, comprising:
a semiconductor base that includes:
a semiconductor element; and
a plurality of electrode portions for external connection, wherein the plurality of electrode portions are on a surface of the semiconductor base; and
a plurality of columnar terminals that protrudes from the plurality of electrode portions of the semiconductor base, wherein
each columnar terminal of the plurality of columnar terminals includes a part of a lead frame,
a junction surface, between a columnar terminal of the plurality of columnar terminals and an electrode portion, of the plurality of electrode portions, corresponding to the columnar terminal, has an elliptic shape,
a distal end side of the columnar terminal corresponding to the electrode portion, has a circular shape,
the plurality of electrode portions include the electrode portion, and
a major axis direction of the elliptic shape of the junction surface extends toward a central portion of the semiconductor base.
5 . The semiconductor device according to claim 4 , wherein the junction surface is larger than the distal end side of the columnar terminal corresponding to the electrode portion.
6 . The semiconductor device according to claim 4 , further comprising a heat dissipation pad on the surface of the semiconductor base, wherein the heat dissipation pad comprises the part of the lead frame.
7 . The semiconductor device according to claim 4 , further comprising a reinforcing portion on the surface of the semiconductor base, wherein the reinforcing portion comprises the part of the lead frame.
8 . The semiconductor device according to claim 4 , further comprising a ground (GND) plain on the surface of the semiconductor base, wherein the GND plain comprises the part of the lead frame.
9 . The semiconductor device according to claim 4 , further comprising:
a second semiconductor element on the surface of the semiconductor base; and
a shield portion on the surface of the semiconductor base, wherein the shield portion comprises the part of the lead frame to cover the second semiconductor element.
10 . An electronic apparatus, comprising:
a semiconductor device that includes a semiconductor base and a plurality of columnar terminals, wherein
the semiconductor base includes:
a semiconductor element; and
a plurality of electrode portions for external connection, wherein the plurality of electrode portions is on a surface of the semiconductor base,
the plurality of columnar terminals protrudes from the plurality of electrode portions of the semiconductor base,
each columnar terminal of the plurality of columnar terminals includes a part of a lead frame,
a junction surface, between a columnar terminal of the plurality of columnar terminals and an electrode portion, of the plurality of electrode portions, corresponding to the columnar terminal, has an elliptic shape,
a distal end side of the columnar terminal corresponding to the electrode portion, has a circular shape,
the plurality of electrode portions include the electrode portion, and
a major axis direction of the elliptic shape of the junction surface extends toward a central portion of the semiconductor base.