Composite component and method for manufacturing the same
A composite component includes an interposer structure and an electronic component. The interposer structure has a Si base layer having a first main surface and a second main surface opposite to each other, a redistribution layer formed on the first main surface, through-Si vias electrically connected to the redistribution layer and penetrating the Si base layer, an interposer electrode facing the second main surface, an adhesive layer and an insulating layer. The electronic component has component electrodes respectively connected to the through-Si vias. The electronic component is provided between the interposer electrode and the Si base layer. The insulating layer is disposed between the component electrodes of the electronic component. In the electronic component, the component electrode and a surface on which the insulating layer is disposed are bonded to the second main surface of the Si base layer with the adhesive layer interposed therebetween.
1 . A composite component, comprising:
an interposer structure having
a Si base layer having a first main surface and a second main surface opposite to each other,
a redistribution layer on the first main surface,
through-Si vias electrically connected to the redistribution layer and penetrating inside the Si base layer,
an interposer electrode facing the second main surface,
an adhesive layer, and
an insulating layer; and
an electronic component having component electrodes respectively connected to the through-Si vias, the electronic component being between the interposer electrode and the Si base layer,
wherein the insulating layer is between the component electrodes of the electronic component, and
in the electronic component, the component electrodes and a surface on which the insulating layer is disposed are bonded to the second main surface of the Si base layer with the adhesive layer interposed therebetween.
2 . The composite component according to claim 1 , wherein
a level difference between an upper surface of the component electrode and an upper surface of the insulating layer in a cross section parallel to a stacking direction of the interposer structure and the electronic component is equal to or less than 1.0 μm.
3 . The composite component according to claim 1 , wherein
surface roughness Rz of the component electrode and the insulating layer is equal or less than 1.0 μm.
4 . The composite component according to claim 1 , wherein
a thickness of the adhesive layer is equal to or less than 10 μm.
5 . The composite component according to claim 1 , wherein
among components constituting the redistribution layer and the insulating layer, common components occupy equal to or greater than 80% by weight.
6 . The composite component according to claim 1 , wherein
the redistribution layer includes an inorganic material, and
the insulating layer includes an organic material.
7 . The composite component according to claim 1 , wherein
the redistribution layer includes an organic material, and
the insulating layer includes an inorganic material.
8 . The composite component according to claim 1 , wherein
in a cross section parallel to a stacking direction of the interposer structure and the electronic component, crystal grains of the component electrode increase in size from a side where the component electrode is in contact with the through-Si via toward a side opposite thereto.
9 . The composite component according to claim 1 , further comprising:
an electronic component layer configured with the electronic component.
10 . The composite component according to claim 1 , further comprising:
an electronic component layer including resin integrated with the electronic component.
11 . The composite component according to claim 2 , wherein
surface roughness Rz of the component electrode and the insulating layer is equal or less than 1.0 μm.
12 . The composite component according to claim 2 , wherein
a thickness of the adhesive layer is equal to or less than 10 μm.
13 . The composite component according to claim 2 , wherein
among components constituting the redistribution layer and the insulating layer, common components occupy equal to or greater than 80% by weight.
14 . The composite component according to claim 2 , wherein
the redistribution layer includes an inorganic material, and
the insulating layer includes an organic material.
15 . The composite component according to claim 2 , wherein
the redistribution layer includes an organic material, and
the insulating layer includes an inorganic material.
16 . The composite component according to claim 2 , wherein
in a cross section parallel to a stacking direction of the interposer structure and the electronic component, crystal grains of the component electrode increase in size from a side where the component electrode is in contact with the through-Si via toward a side opposite thereto.
17 . The composite component according to claim 2 , further comprising:
an electronic component layer configured with the electronic component.