Package structure and method for forming the same
A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.
1 . A method for forming a package structure, comprising:
receiving a die;
forming a first molding surrounding the die;
forming a first redistribution layer (RDL) including a first dielectric layer and a first interconnect structure, wherein the first dielectric layer is disposed over the die and the first molding, the first interconnect structure has a via portion surrounded by the first dielectric layer and electrically connected to the die, and a pad portion disposed over the first dielectric layer and coupled with the via portion;
disposing an interposer over the first RDL to electrically connect the interposer to the die through the first interconnect structure;
disposing an underfill between the interposer and the first dielectric layer;
disposing a molding material over the interposer and the first RDL to cover the interposer and the first RDL;
removing a portion of the molding material to expose a back side of the interposer and form a second molding surrounding the interposer and the underfill;
after the formation of the second molding, removing a portion of the second molding to form an opening to expose a portion of the first interconnect structure, wherein the back side of the interposer and at least the portion of the first interconnect structure are exposed through the second molding prior to the removal of the portion of the second molding, and the removal of the portion of the molding material is prior to the removal of the portion of the second molding;
after the formation of the opening, forming a first via within the opening and extending through the second molding; and
forming a second RDL over the interposer and the second molding,
wherein the second RDL includes a second dielectric layer and a second interconnect structure, the second dielectric layer is disposed over the interposer and the second molding, and the second interconnect structure is surrounded by the second dielectric layer and electrically connected to the first via and the interposer, and a height of the opening is substantially less than a height of the second molding.
2 . The method of claim 1 , wherein the formation of the first molding comprises:
attaching the die over a carrier substrate;
disposing a molding material encapsulating the die over the carrier substrate; and
removing a portion of the molding material to expose a contact of the die.
3 . The method of claim 1 , wherein the formation of the first RDL comprises:
disposing a dielectric material over the die and the first molding;
removing a portion of the dielectric material to form a first opening over the contact of the die; and
disposing a conductive material within the first opening to form the via portion of the first interconnect structure.
4 . The method of claim 3 , further comprising:
disposing a photoresist over the dielectric material;
patterning the photoresist to form a second opening;
disposing a conductive material within the second opening to form the pad portion of the first interconnect structure; and
removing the photoresist, wherein the contact of the die is in contact with the via portion.
5 . The method of claim 4 , wherein the first via is in contact with the pad portion of the first RDL.
6 . The method of claim 4 , wherein the disposing of the interposer includes bonding a conductive pillar of the interposer with the pad portion of the first RDL.
7 . The method of claim 6 , wherein the underfill is disposed to surround the pad portion of the first RDL and the conductive pillar of the interposer.
8 . The method of claim 7 , wherein the underfill is disposed after the disposing of the interposer and before the formation of the second molding.
9 . The method of claim 1 , further comprising:
forming a plurality of solder members between the first RDL and the interposer.
10 . The method of claim 1 , wherein a top surface and a side surface of the pad portion contact the second molding.
11 . A method for forming a package structure, comprising:
receiving a first die and a second die;
forming a first molding surrounding the first die and the second die;
forming a first redistribution layer (RDL) including a first dielectric layer and a first interconnect structure, wherein the first dielectric layer is disposed over the first die, the second die and the first molding, the first interconnect structure is surrounded by the first dielectric layer and electrically connected to the first die and the second die;
disposing an interposer over the first RDL to electrically connect the interposer to the first die and the second die through the first interconnect structure;
disposing an underfill between the interposer and the first die and between the interposer and the second die;
disposing a molding material over the interposer and the first RDL to cover the interposer and the first RDL;
removing a portion of the molding material to expose a back side of the interposer and form a second molding surrounding the interposer;
after the formation of the second molding, removing a portion of the second molding to form an opening to expose the first interconnect structure; and
after the formation of the opening, forming a first via within the opening and extending through the second molding,
wherein the first via is electrically connected to the interposer via the first die or the second die, the back side of the interposer and at least a portion of the first interconnect structure are exposed through the second molding prior to the formation of the first via, the removal of the portion of the molding material is prior to the removal of the portion of the second molding, and a height of the first via is substantially less than a height of the second molding.
12 . The method of claim 11 , wherein a portion of the first molding is disposed between the first die and the second die.
13 . The method of claim 12 , wherein the interposer is disposed over the portion of the first molding.
14 . The method of claim 11 , further comprising forming a second RDL over the interposer and the second molding.
15 . The method of claim 14 , wherein the second RDL includes a second dielectric layer and a second interconnect structure, the second dielectric layer is disposed over the interposer and the second molding, and the second interconnect structure is surrounded by the second dielectric layer and electrically connected to the first via and the interposer.
16 . A method for forming a package structure, comprising:
receiving a die;
forming a first redistribution layer (RDL) including a first dielectric layer and a first interconnect structure, wherein the first dielectric layer is disposed over the die, and the first interconnect structure is surrounded by the first dielectric layer and electrically connected to the die;
forming a second RDL including a second dielectric layer and a second interconnect structure, wherein the second dielectric layer is disposed over the first RDL, the second interconnect structure has a first portion surrounded by the second dielectric layer and electrically connected to the first interconnect structure of the first RDL, and a second portion disposed over the second dielectric layer and coupled with the first portion;
disposing an interposer over the second RDL;
disposing an underfill between the interposer and the second dielectric layer;
forming a molding over the second RDL and entirely encapsulating the interposer and the underfill;
removing portions of the molding to expose a back side of the interposer and to form an opening to partially expose the second interconnect structure; and
after the formation of the opening, forming a via within the opening and extending through the molding and coupled to the second interconnect structure,
wherein the back side of the interposer and at least a portion of the second interconnect structure are exposed through the molding simultaneously after the formation of the opening and prior to the formation of the via, and a height of the first via is substantially less than a total height of the interposer and the underfill.
17 . The method of claim 16 , wherein the via is disposed adjacent to the interposer and electrically connected to the second interconnect structure.
18 . The method of claim 17 , wherein the via is disposed over the die.
19 . The method of claim 16 , wherein the underfill contacts the second dielectric layer.
20 . The method of claim 16 , further comprising forming a third RDL over the interposer and the molding, wherein the third RDL includes a third dielectric layer and a third interconnect structure, the third dielectric layer is disposed over the interposer, and the third interconnect structure is electrically connected to the second interconnect structure via the interposer, and the interposer is in contact with the third dielectric layer.