AI wiring material
There is provided a novel Al wiring material that achieves both of a suppression of chip damage and a thermal shock resistance. In aspect 1, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2≤H 1h /H 1s where H 1h is a Vickers hardness of the Al core material (Hv) and H 1s is a Vickers hardness of the Al coating layer (Hv). In aspect 2, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2≤H 2h /H 2s where H 2s is a Vickers hardness of the Al core material (Hv) and H 2h is a Vickers hardness of the Al coating layer (Hv).
1 . An Al wiring material comprising an Al core material and an Al coating layer formed on a surface of the Al core material, wherein
the Al wiring material satisfies 1.2≤H 1h /H 1s and x2<x1,
where H 1s is a Vickers hardness of the Al core material (Hv), H 1h is a Vickers hardness of the Al coating layer (Hv), x1 is an Al content in the Al core material (mass %), and x2 is an Al content in the Al coating layer (mass %).
2 . The Al wiring material according to claim 1 , satisfying
0.5D≤d 1sc ≤0.95D
where D is a diameter of the Al wiring material (μm) and d 1sc is a diameter of the Al core material (μm).
3 . The Al wiring material according to claim 1 , satisfying a relation of 95≤x2<x1
where x1 is an Al content in the Al core material (mass %) and x2 is an Al content in the Al coating layer (mass %).
4 . An Al wiring material comprising an Al core material and an Al coating layer formed on a surface of the Al core material, wherein
the Al wiring material satisfies 1.2≤H 2h /H 2s and 0.25D≤d 2hc ≤0.7D,
where H 2h is a Vickers hardness of the Al core material (Hv), H 2s is a Vickers hardness of the Al coating layer (Hv), D is a diameter of the Al wiring material (μm), and d 2hc is a diameter of the Al core material.
5 . The Al wiring material according to claim 4 , satisfying
0.3D≤d 2hc ≤0.65D
where D is a diameter of the Al wiring material (μm) and d 2hc is a diameter of the Al core material.
6 . The Al wiring material according to claim 4 , satisfying a relation of 95≤y1<y2
where y1 is an Al content in the Al core material (mass %) and y2 is an Al content in the Al coating layer (mass %).
7 . An Al wiring material comprising an Al core material and an Al coating layer formed on a surface of the Al core material, wherein
the Al coating layer contains 0.2 to 3 mass %, in total, of one or more element selected from the group consisting of Mg, Sc, Y, Ti, Zr, Hf, V, Nb, Cr, Mo, Mn, Fe, Co, Ni, Cu, Ag, Zn and Si (hereinafter, referred to as a “first group element”), and
the Al core material contains 0 to 500 mass ppm, in total, of a metallic element of the group 10 of the periodic table of elements.
8 . The Al wiring material according to claim 7 , satisfying
0.5D≤d≤0.95D
where D is a diameter of the Al wiring material (μm) and d is a diameter of the Al core material (μm).
9 . An Al wiring material comprising an Al core material and an Al coating layer formed on a surface of the Al core material, wherein
the Al core material contains 0.2 to 3 mass %, in total, of one or more element selected from the group consisting of Mg, Sc, Y, Ti, Zr, Hf, V, Nb, Cr, Mo, Mn, Fe, Co, Ni, Cu, Ag, Zn and Si (hereinafter, referred to as a “first group element”),
the Al coating layer contains 0 to 500 mass ppm, in total, of a metallic element of the group 10 of the periodic table of elements, and
the Al wiring material satisfies 0.25D≤d≤0.7D, where D is a diameter of the Al wiring material (μm) and d is a diameter of the Al core material (μm).
10 . The Al wiring material according to claim 9 , satisfying
0.3D≤d≤0.65D
where D is a diameter of the Al wiring material (μm) and d is a diameter of the Al core material (μm).
11 . The Al wiring material according to claim 7 , wherein the first group element is selected from the group consisting of Sc, Zr, Fe, Ni, Cu and Si.
12 . The Al wiring material according to claim 1 , wherein a diameter of the Al wiring material is 100 to 600 μm.
13 . The Al wiring material according to claim 1 , wherein the Al wiring material is a bonding wire.
14 . A semiconductor device comprising the Al wiring material according to claim 1 .
15 . The Al wiring material according to claim 9 , wherein the first group element is selected from the group consisting of Sc, Zr, Fe, Ni, Cu and Si.
16 . The Al wiring material according to claim 4 , wherein a diameter of the Al wiring material is 100 to 600 μm.
17 . The Al wiring material according to claim 4 , wherein the Al wiring material is a bonding wire.
18 . The Al wiring material according to claim 1 , satisfying
0.52D≤d 1sc ≤0.95D
where D is a diameter of the Al wiring material (μm) and d 1sc is a diameter of the Al core material (μm).
19 . The Al wiring material according to claim 9 , wherein the first group element is at least one selected from the group consisting of Mg, Sc, Y, Ti, Zr, Hf, V, Nb, Cr, Mo, Mn, Fe, Co, Ni, Cu, Ag, and Zn.
20 . The Al wiring material according to claim 9 , wherein a total concentration of first group element is 1.1 to 3 mass %.